Abstract: A dielectric separation type semiconductor device of high voltage withstanding capability includes a primary dielectric layer (3-1) on a first surface of a semiconductor substrate (1), a first semiconductor layer (2) of first conductivity type disposed oppositely to the substrate (1) with the primary dielectric layer (3-1) sandwiched, a second semiconductor layer (4) of first conductivity type on the first semiconductor layer (2), a third semiconductor layer (5) of second conductivity type surrounding peripherally the first semiconductor layer (2), a ring-like insulation film (9) surrounding peripherally the third semiconductor layer (5), a first electrode (6) on the second semiconductor layer (4), a second electrode (7) on the third semiconductor layer (5), a back-surface electrode (8) deposited on a second surface of the substrate (1), and a first auxiliary dielectric layer (3-2) disposed immediately below the second semiconductor layer (4), being junctioned to the second surface.

Abstract: The present invention provides a sensor element having a sensor substrate and a sensing portion supported by the sensor substrate. A resin film is provided between the sensor substrate and the sensing portion. The resin film has a high heat resistance to the temperature of the fabrication process and the use of sensor element, has excellent coverage of a three-dimensional structure, has a flat surface, applies a low stress to the sensing portion, is formed at low temperature, and prevents the sensing portion from being adversely affected in its fabrication process.

Abstract: The invention provides a sensor element having a sensor substrate and a flat sensor portion supported by the sensor substrate in which the surface of the flat sensing portion is covered with a silicone resin film. The silicone resin film is excellent in step coverage of the flat sensing portion, having low stress applied to the sensing portion, can be formed at low temperature and can prevent the sensing portion from being effected with adverse influence even in the fabrication steps.

Abstract: A resist pattern formation method is characterized in that, after a resist pattern is formed on a wafer, a residue generated between resist sidewalls forming the resist pattern is irradiated with an electron beam under a reduced pressure. It is also preferable to detect the residue with pattern defect inspection equipment, and irradiate the detected residue site with an electron beam under a reduced pressure using an electron microscope. The reduced pressure is preferably equal to or lower than 5.0×102 Pa, and an acceleration voltage is preferably equal to or lower than 1200 V. A manufacturing method of a semiconductor device according to the present invention uses the above-described formation method to form a resist pattern. Thus, the residue generated between resist sidewalls can be removed without varying a dimension of a resist pattern spacing.

Abstract: There is disclosed a woody thermoplastic resin composition which prevents the occurrence of rust on the metal surface in a molding machine and suppresses the generation of a volatile substance as encountered when a woody thermoplastic resin composed of a thermoplastic resin and wood flour was subjected to heat molding and processing. According to the present invention, a specific amount of dolomite is added to a woody thermoplastic resin composed of a thermoplastic resin and wood flour thereby there may be obtained a woody thermoplastic resin composition which has an effect to prevent the occurrence of rust on the metal surface in a molding machine during the molding and processing and to suppress the generation of a volatile substance.

Abstract: The present invention provides a magnetoresistive sensor device including a substrate, and a sensing portion and a signal processing circuit formed above the substrate with a resin film being disposed between the sensing portion and the signal processing circuit,

Abstract: A thermoplastic resin composition having an excellent thermal aging resistance, particularly when used in moldings is provided which contains (1) a thermoplastic resin and (2) at least one of a polyglycerin derivative in which at least one hydroxyl group is esterified with a fatty acid, an N-acyl basic amino acid and a dibasic acid erythritol ester, and wherein i) if the polyglycerin derivative is used, the composition contains an antioxidant, or an antioxidant and a filler; ii) if the N-acyl basic amino acid is used, the composition contains a filler; and the thermoplastic resin contains at least one of a polyolefin resin, a polystyrene resin, a polyester resin, a polyamide resin and an engineering plastic; and iii) if the dibasic acid erythritol ester is used, the composition contains a filler, and the thermoplastic resin contains at least one of a polyolefin resin, a polystyrene resin, a polyester resin, a polyamide resin or an engineering plastic; and the amount of the dibasic acid erythritol ester is

Abstract: A low dielectric constant material having an excellent water resistance obtained by heat-treating a borazine compound of the formula (1-2): 1

Abstract: The present invention provides a composition for wood-polymer composites containing a thermoplastic resin, wood flour and a polyol ester compound having not less than one hydroxyl group esterified with fatty acid, and a wood-polymer composite made from this composition. According to the present invention, a wood-polymer composite having well-balanced mechanical strength and processability, as compared to products made from lumber alone and products made from thermoplastic resin alone, and a composition for wood-polymer composites therefor can be provided.

Abstract: Herein is disclosed a flame-retarded thermoplastic resin composition which comprises an original flame-retarded thermoplastic resin composition comprising certain amounts of a thermoplastic resin and of a brominated flame-retardant, and, in combination therewith, a certain amount of a dolomite compound, or in addition thereto, a certain amount of at least one compound selected from a hydrotalcite, a zinc-substituted hydrotalcite compound, or a zeolite compound, which flame-retarded thermoplastic resin composition of the present invention are remarkably improved in heat stabilizing effects as compared with the original flame-retarded thermoplastic resin composition.

Abstract: A process for preparing a highly pure silicone ladder polymer of the general formula (1): wherein R1 and R2 represent F, H, a lower alkyl group, an alkenyl group, an aryl group, a lower fluorinated alkyl group, a fluorinated alkenyl group or a fluorinated aryl group; R3, R4, R5 and R6 each represents H, a lower alkyl group or a lower fluorinated alkyl group; and n represents an integer of 5 to 10000, which comprises: (a) a step of obtaining a prepolymer in which at least one organosilane compound is dissolved in an organic solvent and hydrolyzed with ultrapure water; (b) a step of washing the obtained prepolymer with ultrapure water; and, (c) a step of dissolving the washed prepolymer in an organic solvent and heating without a catalyst.

Abstract: There is disclosed a woody thermoplastic resin composition which prevents the occurrence of rust on the metal surface in a molding machine and suppresses the generation of a volatile substance as encountered when a woody thermoplastic resin composed of a thermoplastic resin and wood flour was subjected to heat molding and processing.

Abstract: Herein is disclosed a flame-retarded thermoplastic resin composition which comprises an original flame-retarded thermoplastic resin composition comprising certain amounts of a thermoplastic resin and of a brominated flame-retardant, and, in combination therewith, a certain amount of a dolomite compound, or in addition thereto, a certain amount of at least one compound selected from a hydrotalcite, a zinc-substituted hydrotalcite compound, or a zeolite compound, which flame-retarded thermoplastic resin composition of the present invention are remarkably improved in heat stabilizing effects as compared with the original flame-retarded thermoplastic resin composition.

Abstract: There is described a method of producing a pure resist pattern having superior topography smaller than the limit of wavelength of exposure light. A first resist pattern containing material capable of producing an acid on exposure to light is coated with a second resist containing material which causes a crosslinking reaction in the presence of an acid. An acid is produced in the resist pattern by exposing the pattern to light, thus forming a crosslinked layer along the boundary surface between the first resist pattern and the second resist. As a result, a second resist pattern which is greater than the first resist pattern is formed. Minute pure resist patterns are produced through two-step processing: that is, by removing the second resist from the substrate through use of a liquid prepared by dissolving an organic solvent into water and by rinsing the substrate with water. The diameter of holes formed in the resist or the interval between isolated patterns can be reduced.

Abstract: A new switching element and a circuit device and the like using the same element are provided, which comprises semiconductor in which a channel region is formed at an interface with an insulating film, first and second terminals S, D, which are located in corresponding manner to both ends of the channel region, and through which a tunnel current is let to flow into the channel region, and a third terminal G giving a high frequency vibration to a potential barrier of the channel region through the insulating film, wherein the tunnel current flowing into the channel region is increased as a value of an exponential function is increased with a predetermined threshold vibration frequency as a boundary value.

Abstract: A thermal stabilizer for halogen-containing resins, comprising a compound of the dolomite series and the zinc salt of an organic acid. The thermal stabilizer, when incorporated in a halogen-containing resin, provides an excellent thermal stabilizing effect for the resin.

Abstract: There is described a method of stably manufacturing a fine resist pattern narrower than the wavelength of exposing light from a stepper. Under the method, a resist pattern is formed on a semiconductor substrate through use of an acid catalyst chemically-amplified photoresist, and an organic film which includes an acid or which produces an acid on exposure to light is formed on the surface of the semiconductor substrate including the resist pattern. The organic film is then subjected to a heat treatment to thereby diffuse an acid. The surface layer of the resist pattern is made soluble in an alkaline developer, and the surface layer of the resist pattern is removed through use of the alkaline developer. As a result, a fine resist pattern is formed.

Abstract: A thermoplastic resin composition comprising a thermoplastic resin, a dibasic acid erythritol ester, a filler and optionally an antioxidant. The dibasic acid erythritol ester, having a degree of esterification of not more than 50%, is added in an amount less than 1 part by weight, per 100 parts by weight of the thermoplastic resin, to improve the thermal aging resistance of the resin.

Abstract: A new switching element and a circuit device and the like using the same element are provided, which comprises semiconductor in which a channel region is formed at an interface with an insulating film, first and second terminals S, D, which are located in corresponding manner to both ends of the channel region, and through which a tunnel current is let to flow into the channel region, and a third terminal G giving a high frequency vibration to a potential barrier of the channel region through the insulating film, wherein the tunnel current flowing into the channel region is increased as a value of an exponential function is increased with a predetermined threshold vibration frequency as a boundary value.

Abstract: A method of manufacturing a semiconductor device comprises the step of applying a nitridation treatment to a semiconductor substrate in the presence of a network terminal element so as to form a nitride film containing the network terminal element on the semiconductor substrate.