Patents by Inventor Naoki Yasui
Naoki Yasui has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250021106Abstract: A moving object control apparatus in the present disclosure that adjusts a stop position of a moving object based on an instruction of a user, acquires instruction information of the user and acquires a captured image captured in a moving object. The apparatus determines a stop position of the moving object and controls traveling of the moving object to cause the moving object to travel toward the determined stop position. The apparatus (i) determines a first stop position using position information of a communication device used by the user or position information corresponding to a destination included in first instruction information of the user, and (ii) determines a second stop position based on second instruction information of the user and a region of a predetermined target identified in the captured image.Type: ApplicationFiled: September 26, 2024Publication date: January 16, 2025Applicant: HONDA MOTOR CO., LTD.Inventors: Kentaro YAMADA, Yuji YASUI, Nanami TSUKAMOTO, Naoki HOSOMI, Anirudh Reddy KONDAPALLY, Kosuke NAKANISHI, Hideki MATSUNAGA, Aman JAIN
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Publication number: 20240331974Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: ApplicationFiled: April 3, 2024Publication date: October 3, 2024Inventors: Isao MORI, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Patent number: 12094687Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.Type: GrantFiled: September 2, 2021Date of Patent: September 17, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Masayuki Shiina, Naoki Yasui, Tetsuo Ono
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Patent number: 11978612Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: GrantFiled: July 11, 2022Date of Patent: May 7, 2024Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Publication number: 20230058692Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: ApplicationFiled: July 11, 2022Publication date: February 23, 2023Inventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Patent number: 11424105Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: GrantFiled: August 5, 2019Date of Patent: August 23, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Patent number: 11417501Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.Type: GrantFiled: September 9, 2016Date of Patent: August 16, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Masayuki Shiina, Naoki Yasui, Tetsuo Ono
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Patent number: 11355315Abstract: A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a controller. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The controller controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.Type: GrantFiled: February 28, 2017Date of Patent: June 7, 2022Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Norihiko Ikeda, Naoki Yasui
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Publication number: 20210398777Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.Type: ApplicationFiled: September 2, 2021Publication date: December 23, 2021Inventors: Masayuki SHIINA, Naoki YASUI, Tetsuo ONO
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Patent number: 11152192Abstract: To improve processing uniformity by improving a working characteristic in an edge exclusion region. Provided is a plasma processing apparatus for processing a sample by generating plasma in a vacuum vessel to which a processing gas is supplied and that is exhausted to a predetermined pressure and by applying a radio frequency bias to a sample placed in the vacuum vessel, wherein a conductive radio frequency ring to which a radio frequency bias power is applied is arranged in a stepped part formed outside a convex part of the sample stage on which the wafer is mounted, and a dielectric cover ring is provided in the stepped part, covering the radio frequency ring, the cover ring substantially blocks penetration of the radio frequency power to the plasma from the radio frequency ring, and the radio frequency ring top surface is set higher than a wafer top surface.Type: GrantFiled: December 13, 2018Date of Patent: October 19, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Naoki Yasui, Norihiko Ikeda, Tooru Aramaki, Yasuhiro Nishimori
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Patent number: 11094512Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency poweType: GrantFiled: May 18, 2020Date of Patent: August 17, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Kazuya Yamada, Koichi Yamamoto, Naoki Yasui, Norihiko Ikeda, Isao Mori
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Patent number: 11081320Abstract: A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.Type: GrantFiled: March 6, 2019Date of Patent: August 3, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Norihiko Ikeda, Naoki Yasui, Kazuya Yamada
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Patent number: 11004658Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.Type: GrantFiled: July 31, 2018Date of Patent: May 11, 2021Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Michikazu Morimoto, Naoki Yasui, Yasuo Ohgoshi
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Publication number: 20210043424Abstract: A plasma processing apparatus includes a processing chamber in which a sample is subjected to plasma processing, a first radio frequency power supply that supplies radio frequency power for generating plasma, a sample stage on which the sample is mounted, and a second radio frequency power supply that supplies radio frequency power to the sample stage, the plasma processing apparatus further includes a DC power supply that applies a DC voltage, that is changed according to a periodically repeated waveform, to the sample stage, and the waveform of one cycle has a period in which amplitude changes by a predetermined amount or more during a predetermined time. Accordingly, charged particles on a wafer surface are removed, a trench shape with high verticality can be obtained, and damage to a film that is not to be etched inside a trench can be reduced.Type: ApplicationFiled: August 5, 2019Publication date: February 11, 2021Inventors: Isao Mori, Masaru Izawa, Naoki Yasui, Norihiko Ikeda, Kazuya Yamada
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Publication number: 20200286715Abstract: A plasma processing apparatus includes a processing chamber 101 where a wafer 114 is processed using plasma 111, a radio frequency power supply 106 configured to supply a radio frequency power for generating the plasma 111, a mechanism configured to form a magnetic field for forming ECR and to control a magnetic flux density thereof, and a sample stage 113 on which the wafer 114 is placed. The plasma processing apparatus further includes a control unit 107 configured to, based on image data of the plasma 111, monitor a height of ECR which is electron cyclotron resonance generated by an interaction between the radio frequency power and the magnetic field, and to control a frequency of the radio frequency power such that the monitored ECR height becomes a predetermined height.Type: ApplicationFiled: March 6, 2019Publication date: September 10, 2020Inventors: Norihiko IKEDA, Naoki YASUI, Kazuya YAMADA
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Publication number: 20200279719Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency poweType: ApplicationFiled: May 18, 2020Publication date: September 3, 2020Inventors: Kazuya YAMADA, Koichi YAMAMOTO, Naoki YASUI, Norihiko IKEDA, Isao MORI
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Patent number: 10755897Abstract: In a plasma processing apparatus, a placement electrode includes an inner peripheral electrode for electrostatically adsorbing a wafer and an outer peripheral electrode disposed outside the inner peripheral electrode for electrostatically adsorbing the wafer, and a DC power supply unit on which the wafer is placed supplies a first radio frequency power to the inner peripheral electrode via an inner peripheral transmission path. A DC power supply unit supplies a second radio frequency power having the same frequency as the frequency of the first radio frequency power to the outer peripheral electrode via an outer peripheral transmission path. An electromagnetic wave generating power supply supplies a third radio frequency power for generating plasma.Type: GrantFiled: August 31, 2018Date of Patent: August 25, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Norihiko Ikeda, Kazuya Yamada, Naoki Yasui
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Patent number: 10699884Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency poweType: GrantFiled: March 13, 2018Date of Patent: June 30, 2020Assignee: HITACHI HIGH-TECH CORPORATIONInventors: Kazuya Yamada, Koichi Yamamoto, Naoki Yasui, Norihiko Ikeda, Isao Mori
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Patent number: 10665516Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.Type: GrantFiled: August 30, 2017Date of Patent: May 26, 2020Assignee: Hitachi High-Technologies CorporationInventors: Miyako Matsui, Kenichi Kuwahara, Naoki Yasui, Masaru Izawa, Tatehito Usui, Takeshi Ohmori
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Patent number: 10622269Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.Type: GrantFiled: August 30, 2017Date of Patent: April 14, 2020Assignee: Hitachi High-Technologies CorporationInventors: Miyako Matsui, Kenichi Kuwahara, Naoki Yasui, Masaru Izawa, Tatehito Usui, Takeshi Ohmori