Abstract: A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil.

Abstract: According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency powe

Abstract: A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an and of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

Abstract: In order to provide a plasma processing apparatus or method with improved processing uniformity, a plasma processing apparatus includes: a processing chamber which is disposed inside a vacuum container; a sample stage which is disposed inside the processing chamber and has a top surface for placing a wafer corresponding to a processing target thereon; an electric field forming part which forms an electric field supplied into the processing chamber; a coil which forms a magnetic field for forming plasma inside the processing chamber by an interaction with the electric field; and a controller which increases or decreases intensity of the plasma inside the processing chamber by repeatedly increasing or decreasing intensity of the magnetic field formed by the coil at a predetermined interval, wherein the wafer is processed while the plasma is repeatedly formed and diffused.

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

Abstract: Provided is a plasma processing apparatus or method in which a procedure containing processing steps of supplying a predetermined amount of processing gas into a processing chamber disposed in a vacuum vessel through a gas supply unit, and processing a wafer placed on a sample table disposed in the processing chamber by generating plasma in the processing chamber using the processing gas supplied on each different condition. The procedure includes a first transition step of adjusting and supplying the rare gas to make a pressure of the rare gas equal to a condition of the processing gas used in the former processing step, and a second transition step of adjusting and supplying the rare gas after the first transition step such that a pressure and a flow rate of the rare gas come to be equal to a condition of the processing gas used in the later processing step.

Abstract: The present invention relates to an etching method including a reaction layer forming step of forming a reaction layer by adsorption of a gas on a surface of an etching target material, a desorption step of desorbing the reaction layer after the reaction layer forming step, and a removal step of removing the reaction layer or a deposited film, characterized in that the surface of the etching target material is etched by the reaction layer forming step and the desorption step.

Abstract: The plasma processing apparatus includes: a processing chamber disposed inside a vacuum vessel; a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate a plasma for use in processing a sample to be processed inside the processing chamber; a sample stage disposed inside the processing chamber with the sample placed on an upper surface thereof; a second high-frequency power supply intermittently outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage and capable of variably adjusting the output time; and a function to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in waveform of current or voltage in a transient state of the second high-frequency power in synchronism with start of the intermittent output of the second high-frequency power.

Abstract: A plasma processing apparatus according to the present invention includes a processing chamber, a first radio frequency power source, and a second radio frequency power source. The first radio frequency power source supplies radio frequency power to generate the plasma. The second radio frequency power source applies a first radio frequency voltage to a sample stage. The plasma processing apparatus further includes a third radio frequency power source and a control unit. The third radio frequency power source applies, to the sample stage, a second radio frequency voltage having a frequency which is N times a frequency of the first radio frequency voltage in a case where N is a natural number of 2 or more. The control unit controls a phase difference such that the phase difference between a phase of the first radio frequency voltage and a phase of the second radio frequency voltage reaches a predetermined value.

Abstract: A plasma processing apparatus includes a sample stage disposed in a processing chamber within a vacuum chamber. A wafer mounted on a top surface of the sample stage is processed by using plasma formed in the processing chamber. The plasma processing apparatus further includes electrodes disposed on a part on a center side and a part on a peripheral side within the sample stage and supplied with radio frequency power. Large amplitude and small amplitude are repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side. A control apparatus adjusts a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values.

Abstract: A plasma processor, including a first gas supplier to supply first gas to the inside of a vacuum vessel, a stage on which a wafer is placed, an electromagnetic wave supplier to supply electromagnetic waves for generating first plasma, a susceptor provided to an outer peripheral portion of the stage, a second high frequency power source connected to the susceptor, and a second gas supplier to supply second gas to the inside of the susceptor. The inside of the susceptor is provided with a high frequency electrode connected to the second high frequency power source and a first earth electrode disposed opposite to the high frequency electrode. The second high frequency power source supplies high frequency power while the second gas supplier supplies the second gas, thereby generating second plasma inside the susceptor.

Abstract: The plasma processing apparatus has a plasma processing chamber where plasma processing of the sample is performed, and plasma power supply that supplies radio frequency electric power for generating plasma. The radio frequency electric power is time modulated by a pulse wave having a first period and a second period that are repeated periodically. The pulse wave of the first period has first amplitude and the pulse wave of the second period has second amplitude which is a limited value smaller than the first amplitude. The extinction of the plasma, which is generated during the first period having the first amplitude, is maintained during the second period having the second amplitude with a predetermined dissociation.

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract: A plasma processing apparatus includes a sample stage disposed in a processing chamber within a vacuum chamber. A wafer mounted on a top surface of the sample stage is processed by using plasma formed in the processing chamber. The plasma processing apparatus further includes electrodes disposed on a part on a center side and a part on a peripheral side within the sample stage and supplied with radio frequency power. Large amplitude and small amplitude are repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side. A control apparatus adjusts a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values.

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on state of the time-modulated second radio-frequency power until an and of the on-state and maintains a matching state attained during the sampling effective period from after the end of the so-state until a next sampling effective period.

Abstract: There is provided a VUV light processing apparatus that can apply vacuum ultraviolet light to the entire surface of a wafer in excellent reproducibility and can process the wafer with VUV (vacuum ultraviolet) light in excellent reproducibility. A VUV light processing apparatus includes: a chamber connected with a gas supply apparatus and an evacuation apparatus, the chamber being capable of reducing the pressure inside the chamber; a plasma light source that generates VUV light including a wavelength of 200 nm or less, the plasma light source including a plasma generating unit that generates plasma in the chamber; and a VUV transmission filter provided between a stage on which a sample to be processed is placed and the sample in the chamber, the VUV transmission filter transmitting the VUV light including a wavelength of 200 nm or less and not transmitting electrons, ions, and radicals in plasma, the VUV transmission filter having the outer diameter size larger than that of the sample.

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

Abstract: The plasma processing apparatus includes: a processing chamber disposed inside a vacuum vessel; a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate a plasma for use in processing a sample to be processed inside the processing chamber; a sample stage disposed inside the processing chamber with the sample placed on an upper surface thereof; a second high-frequency power supply intermittently outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage and capable of variably adjusting the output time; and a function to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in waveform of current or voltage in a transient state of the second high-frequency power in synchronism with start of the intermittent output of the second high-frequency power.

Abstract: In a plasma processing apparatus having a plasma processing chamber for applying plasma processing to a sample, a first radio frequency power supply for supplying first radio frequency power for generation of a plasma, a sample stage for mounting the sample thereon, a second radio frequency power supply for supplying second radio frequency power to the sample stage, and a pulse-generating unit for sending to the first radio frequency power supply a first pulse for time modulation of the first radio frequency power and for sending to the second radio frequency power supply a second pulse for time modulation of the second radio frequency power, the pulse-generating unit includes a phase control waveform generation unit for generating a phase modulation-use waveform for modulating the phase of ON period of the second pulse and modulates by the phase modulation-use waveform the phase of ON period of the second pulse.