Abstract: The invention relates to compounds of Formula I: wherein Ar1, Ar2, Ar3, L1, L2, Y, Z and v are defined in the specification, and pharmaceutically acceptable derivatives thereof, compositions comprising an effective amount of a compound of Formula I or a pharmaceutically acceptable derivative thereof, and methods for treating or preventing a condition such as pain, UI, an ulcer, IBD and IBS, comprising administering to an animal in need thereof an effective amount of a compound of Formula I or a pharmaceutically acceptable derivative thereof.

Abstract: According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

Abstract: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Abstract: A drip bag having a bag body and a holder which is formed from a sheet material and is adhered to the bag body. The holder is folded into two parts, a front surface and a rear surface, on a center fold line, and the center fold line overlaps a lateral side of the bag body. V-shaped fold lines bent in V-shapes and extending from the open edge of the drip bag toward the bottom direction thereof are formed in regions on the side of the center fold line of the front surface and the rear surface of the holder. In addition, overhanging parts, which have concave portions for hooking, are formed in a manner that allows them to be pulled open on both the left and right sides of the lower end of each of the front surface and the rear surface of the holder.

Abstract: According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.

Abstract: According to one embodiment, a semiconductor manufacturing apparatus is provided. The semiconductor manufacturing apparatus includes a stage, a substrate supporter, first and second pushers, and a controller. The stage is configured to support outer periphery portions of the first semiconductor substrate from below. The substrate supporter is configured to hold the back of the second semiconductor substrate. The first and second pushers are configured to bring the first and second semiconductor substrates in contact. The controller is configured to form the bonding initiation point between the first and second semiconductor substrates.

Abstract: According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.

Abstract: According to one embodiment, semiconductor manufacturing apparatus includes a first member that holds a first semiconductor substrate; a second member that holds a second semiconductor substrate in a state where a bonding surface of the second semiconductor substrate faces a bonding surface of the first semiconductor substrate; a distance detecting unit that detects a distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate; an adjusting unit that adjusts the distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate to a predetermined value by moving at least one of the first and second members based on a detection result of the distance detecting unit; and a third member that forms the bonding start point between the first semiconductor substrate and the second semiconductor substrate.

Abstract: According to one mode of the present invention, metal-containing resin particles composed of a resin containing 50 wt % or more of a thermosetting resin and having a ratio of weight of absorbed moisture to weight of resin from 500 to 14500 ppm, and fine metal particles contained in said resin, is provided.

Abstract: According to one embodiment, an insulation film is formed over the surface, backside, and sides of a first substrate. Next, the insulation film formed over the surface of the first substrate is removed. Then, a joining layer is formed over the surface of the first substrate, from which the insulation film has been removed. Subsequently, the first substrate is bonded to a second substrate via a joining layer.

Abstract: According to an embodiment, an active layer is formed on a first surface of a semiconductor substrate, a wiring layer is formed on the active layer, and an insulating layer is formed covering the wiring layer. The first surface of the semiconductor substrate is bonded to a support substrate via the insulating layer, and the semiconductor substrate bonded to the support substrate is thinned leaving the semiconductor substrate having a predetermined thickness which covers the active layer from a second surface. At least a part of area of the thinned semiconductor substrate is removed to expose the active layer.

Abstract: A drip bag having a bag body and a holder which is formed from a sheet material and is adhered to the bag body. The holder is folded into two parts, a front surface and a rear surface, on a center fold line, and the center fold line overlaps a lateral side of the bag body. V-shaped fold lines bent in V-shapes and extending from the open edge of the drip bag toward the bottom direction thereof are formed in regions on the side of the center fold line of the front surface and the rear surface of the holder. In addition, overhanging parts, which have concave portions for hooking, are formed in a manner that allows them to be pulled open on both the left and right sides of the lower end of each of the front surface and the rear surface of the holder.

Abstract: According to the embodiments, a semiconductor substrate, an active layer that is formed on one surface of the semiconductor substrate, a wiring layer that is formed on the active layer and includes a wire to be a convex portion on a surface that is not in contact with the active layer, a insulation layer that is formed on the wiring layer to have a concave portion, an embedded layer that is provided on the concave portion of the insulation layer, a bonding layer that is provided on the insulation layer and the embedded layer, and a substrate that is bonded to the bonding layer to face one surface of the semiconductor substrate are included.

Abstract: According to one embodiment, a first substrate and a second substrate are pressed from an opposite surface of a joint surface of the second substrate such that a joint surface of the first substrate and the joint surface of the second substrate are in contact with each other. The second substrate is restrained by a member to provide a gap between the joint surfaces. It is determined, based on a temporal change of a joint interface calculated based on an image imaged from the opposite surface side of the joint surface, whether joining is normally performed.

Abstract: Provided is metal-containing resin particle for forming a conductor pattern in which the metal particles are dispersed in a resin matrix, and the content of the metal particles is 70 wt % or less.

Abstract: An image forming apparatus comprises an exposure unit forming an electrostatic latent image on a photo conductor based on image information, a developing unit developing the electrostatic latent image by toner made of formation material of a circuitry layer, and an electrostatic transferring unit transferring a toner image on the photo conductor onto a substrate. The toner image is transferred so as to cover at least a part of a conductor layer formed on the substrate. At this time, excessive charges caused in the conductor layer accompanying the start of the transfer of the toner image are removed. Alternatively, charges of which polarity is reverse to that of the toner are added to the conductor layer. These allow the circuitry layer to be formed to have a desired pattern favorably and securely on the conductor layer.

Abstract: A fiber sheet is obtained by laminating a nonwoven fabric on a gauze. The gauze satisfies a warp fineness of 5 to 40 deniers, a warp density of 40 to 100 warps/inch, a weft fineness of 5 to 40 deniers, and a weft density of 20 to 100 wefts/inch. The nonwoven fabric is made of a melt-blown nonwoven fabric, a spunbonded nonwoven fabric, or a carded nonwoven fabric, having a fineness of 4.0 deniers or less. The fiber sheet has a basis weight of 7.5 to 20 g/m2. The fiber sheet is excellent like a gauze in terms of its transparency and strength and suitable also for contents having fine particle diameters. The fiber sheet can be obtained at a high productivity.

Abstract: A compound represented by the general formula (I): wherein R1 is wherein R26 and R28 are each independently lower alkyloxy and the like; n1 is an integer of 0 to 3; Z is a optionally substituted C1-C5 alkynylene which may be interrupted with a substituent selected from Substituent group a and the like; A is a group represented by the formula: wherein R6 and R7 are each independently lower alkyl and the like; m and n are each independently 0, 1, or 2; R2 is a hydrogen atom and the like; R3 is optionally substituted lower alkyl and the like; R4 is a hydrogen atom; or R3 and R4 may be taken together with an adjacent carbon atom to from a ring; R5 is hydroxyl and the like, or an optically active isomer, a pharmaceutically acceptable salt or a solvate thereof.

Abstract: According to one mode of the present invention, metal-containing resin particles comprising a resin containing a thermosetting resin at 50 wt % or more and having a rate of moisture absorption from 500 to 14500 ppm, and fine metal particles contained in the resin, is provided.

Abstract: A nonwoven fabric characterized in that the nonwoven fabric is a thermoplastic synthetic fiber nonwoven fabric having a fabric weight of 7 to 50 g/m2, an average yarn diameter of 7 to 40 ?m, a partial heat contact bonding ratio of 5 to 30% and a content of a delustering agent of 0.5% by weight or less, or a nonwoven fabric laminate the major component of which is the thermoplastic synthetic fiber nonwoven fabric, and that the nonwoven fabric has a maximum opening diameter of 200 to 2,000 ?m, and shows a transparency of 50% or more, a powder leakage ratio of 10% by weight or less and a hydrophilicity of less than 10 sec, and a tea bag in which the nonwoven fabric is used.