Abstract: According to one embodiment, a waveguide includes: a substrate and a member. The member covers at least a part of the substrate and has a difference in the refractive index from the substrate not less than 2. A plurality of concave parts are provided on the substrate. The concave parts are arrayed on an upper face of the substrate. At least a part of a side face of each of the concave parts includes an arc. An inner diameter of each of the concave parts is not more than 50 nm. Intervals of the neighboring concave parts are not more than the inner diameter. The member fills the concave part.

Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

Abstract: A method of manufacturing a light-emitting device includes disposing a light-emitting element on a supporting member, dispersing a fluorescent substance having a particle diameter of 20 to 45 ?m in a material of the light-transmitting member at a concentration of 40 to 60 wt %, dripping raw material for the fluorescent layer on the light-emitting element while lowering the viscosity of the raw material, and thermally curing the coated layer.

Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.

Abstract: According to one embodiment, a waveguide includes: a substrate and a member. The member covers at least a part of the substrate and has a difference in the refractive index from the substrate not less than 2. A plurality of concave parts are provided on the substrate. The concave parts are arrayed on an upper face of the substrate. At least a part of a side face of each of the concave parts includes an arc. An inner diameter of each of the concave parts is not more than 50 nm. Intervals of the neighboring concave parts are not more than the inner diameter. The member fills the concave part.

Abstract: A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.

Abstract: An acid gas absorbent of which recovery amount of acid gas such as carbon dioxide is high, and an acid gas removal device and an acid gas removal method using the acid gas absorbent are provided. The acid gas absorbent of the embodiment comprising at least one type of tertiary amine compound represented by the following general formula (1). (In the above-stated formula (1), either one of the R1, R2 represents a substituted or non-substituted alkyl group of which carbon number is 2 to 5, and the other one represents a substituted or non-substituted alkyl group of which carbon number is 1 to 5. The R3 represents a methyl group or an ethyl group, and the R4 represents a hydroxyalkyl group. The R1, R2 may either be the same or different, and they may be coupled to form a cyclic structure.

Abstract: A method of manufacturing a light-emitting device includes disposing a light-emitting element on a supporting member, dispersing a fluorescent substance having a particle diameter of 20 to 45 ?m in a material of the light-transmitting member at a concentration of 40 to 60 wt %, dripping raw material for the fluorescent layer on the light-emitting element while lowering the viscosity of the raw material, and thermally curing the coated layer.

Abstract: A light-emitting device is provided, which includes a supporting member, a light-emitting element disposed on the supporting member to emit a light, and a fluorescent layer formed on the light-emitting element and having a thickness ranging from 80 to 240 ?m, the fluorescent layer containing a light-transmitting member and a fluorescent substance having a particle diameter ranging from 20 to 45 ?m at a concentration of 40 to 60 wt %.

Abstract: The present invention relates to a light emitting apparatus including a semiconductor light emitting element and a transparent ceramic phosphor for converting a wavelength of a light emitted from the semiconductor light emitting element, wherein the semiconductor light emitting element emits an ultraviolet light, and the ceramic phosphor corresponding to the semiconductor light emitting element has (i) a minimum transmission of 0.1 to 40% under a wavelength of 350-420 nm and (ii) a transmission of 10 to 90% under an emission peak wavelength of the ceramic phosphor.

Abstract: A fuel cell is provided, which includes a membrane electrode assembly including an electrolytic film sandwiched between an anode catalyst layer and a cathode catalyst layer, an anode gas diffusion layer disposed adjacent to the anode catalyst layer and a cathode gas diffusion layer disposed adjacent to the cathode catalyst layer, and a pair of separators which are in contact with the anode gas diffusion layer and the cathode gas diffusion layer, respectively. At least one of the separators includes a metallic member having a channel and an oxide layer disposed on a bottom of the channel. The oxide layer includes silica and tin oxide which accounts for 0.0001-30% by weight of silica.

Abstract: A method for manufacturing a fluorescent substance is provided, which includes mixing a raw material for Eu, a raw material for Si, at least one raw material powder of alkaline earth, and at least one selected from the group consisting of raw materials for La , Gd, Cs, and K to obtain a mixture of raw materials; pre-firing the mixture to obtain a baked material; mixing the baked material and firing in a reducing atmosphere consisting of a mixed gas of N2/H2 to obtain a first fired product; pulverizing the first fired product to obtain a pulverized first fired product; firing the pulverized first fired product in a reducing atmosphere consisting of N2/H2 to obtain a fluorescent substance consisting of an alkaline earth ortho-silicate; pulverizing the fluorescent substance to obtain a fluorescent particle; sieving the fluorescent particle; and providing a surface-covering material on a surface of the fluorescent particle.

Abstract: A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.

Abstract: A light-emitting device is provided, which includes a supporting member, a light-emitting element disposed on the supporting member to emit a light, the light-emitting element having a semiconductor substrate and a polygonal top surface, an electrode pad formed on the top surface of the light-emitting element, a first lead electrode formed on the supporting member, a conductive wire connecting the electrode pad with the first lead electrode, the conductive wire being arranged to pass over one of corners of the polygonal top surface of the light-emitting element and along a ridge formed contiguous to the one of corners and corresponding to a boundary between neighboring side surfaces of the light-emitting element, and a fluorescent layer containing a light-transmitting member and a fluorescent substance.

Abstract: A europium-activated alkaline earth orthosilicate luminescent material is provided, which includes a compound having a composition represented by a following formula 1: (SrxBayCazEuw)2SiO4??formula 1 wherein, x, y, z and w satisfy following relational expressions 2, and 4 to 7, and are values satisfying the expression 3 when a, b, c and d are assumed to be 573, 467, 623 and 736, respectively: x+y+z+w=1??expression 2 600?ax+by+cz+dw??expression 3 0?x/(1?w)?0.95??expression 4 0?y/(1?w)?0.4??expression 5 0<z/(1?w)?0.95??expression 6 0.02?w?0.2??expression 7 the luminescent material shows an emission band having a peak wavelength of 600 nm or more when the luminescent material is excited by ultraviolet radiation having a wavelength of 254 nm.

Abstract: An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.