Patents by Inventor Naoshi Itabashi

Naoshi Itabashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060096706
    Abstract: The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.
    Type: Application
    Filed: December 23, 2005
    Publication date: May 11, 2006
    Inventors: Naoyuki Kofuji, Masahito Mori, Ken'etsu Yokogawa, Naoshi Itabashi, Kazunori Tsujimoto, Shin'ichi Tachi
  • Publication number: 20060032584
    Abstract: A plasma processing apparatus includes a reaction container with the inner side wall thereof insulated, a sample rest and an antenna arranged in the reaction container. The high-frequency power is supplied to the antenna from a plasma generating power supply, the processing gas is introduced into the reaction container and converted to a plasma, and the sample placed on the sample rest is processed by the plasma. A matching unit for securing the impedance matching is inserted between the plasma generating power supply and a load circuit including the antenna. The matching unit includes a sensor for measuring the impedance characteristic on the load circuit side and a unit for changing the match point and the matching track leading to the match point on the input side of the matching unit in accordance with the measurement by the sensor.
    Type: Application
    Filed: September 7, 2004
    Publication date: February 16, 2006
    Inventors: Naoshi Itabashi, Tsutomu Tetsuka, Atsushi Ito
  • Publication number: 20050133162
    Abstract: A plasma processing apparatus having 90% or more of a side wall of an inner wall 101 of a reaction chamber 1 covered with a dielectric 102, and equipped with an earthed conductive member 21a having an area of less than 10% of the side wall area of the inner wall 101 and having a structure to allow direct current from a plasma to flow therein, wherein the DC earth formed of the conductive member 21 is located at a position where floating potential of plasma (or plasma density) is higher than the floating potential of plasma 9 located near a wafer holding electrode 14 where there is relatively large wall chipping.
    Type: Application
    Filed: February 24, 2004
    Publication date: June 23, 2005
    Inventors: Tsutomu Tetsuka, Kazuyuki Ikenaga, Tetsuo Ono, Motohiko Yoshigai, Naoshi Itabashi
  • Publication number: 20050087297
    Abstract: The invention aims at providing a plasma processing apparatus capable of removing the deposition film in the processing chamber and suppressing the corrosion of wall surface material. The plasma processing apparatus for subjecting an object to be processed to vacuum processing by introducing a processing gas into a processing chamber 101 and generating plasma 110 comprises plasma generating means 106 through 108, a monitor means 112 for detecting the existence of a reaction product containing a material constituting an inner wall 102 of the processing chamber, and an alarm means for notifying that the existence of the reaction product containing the material constituting the inner wall 102 of the processing chamber has exceeded a predetermined amount, wherein a plasma cleaning is performed for every arbitrary etching process, and a wall surface stabilization process is subsequently performed using O2 gas or F gas.
    Type: Application
    Filed: August 6, 2004
    Publication date: April 28, 2005
    Inventors: Hiroyuki Kitsunai, Naoshi Itabashi, Motohiko Yoshigai, Tetsuo Ono
  • Publication number: 20050072444
    Abstract: A method for processing a plasma processing apparatus having plasma generating means 3, 8, 10, 13 through 15 for generating plasma within a processing chamber, a high-frequency power applying means 18 for applying high-frequency power to an object 17 to be processed, a processing chamber 1 to which an evacuating device 7 is connected and capable of having its interior evacuated, and a gas supply device (not shown) for the processing chamber, wherein the method comprises mounting a Si wafer 17 on an electrode 4 for holding the object to be processed, introducing hydrobromic gas and chlorine gas into the processing chamber and generating plasma, and removing the aluminum-based deposit adhered to the interior of the processing chamber.
    Type: Application
    Filed: March 4, 2004
    Publication date: April 7, 2005
    Inventors: Shigeru Shirayone, Tetsuo Ono, Naoshi Itabashi, Motohiko Yoshigai, Takahiro Abe, Takahiro Shimomura, Hiroyuki Kitsunai
  • Patent number: 6797112
    Abstract: A plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a standing wave controlling part provided near the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−1)±l/8: (n=positive integer, l=c(light velocity)/f/{square root over (&egr;)}) in terms of the characteristic length.
    Type: Grant
    Filed: April 8, 2003
    Date of Patent: September 28, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Naoshi Itabashi, Naoyuki Kofuji, Yasunori Goto
  • Publication number: 20040058554
    Abstract: In order to provide an etching method for silicone oxide film by fluorocarbon plasma in semiconductor production, which is superior in precise manufacturing and highly selective to resist and silicone nitride film, two kinds of electronic temperature regions are generated in plasma, and a generation ratio of CF2/F is controlled independently from a generation amount of ions by making areas of these two electronic temperature regions variable with a magnetic field gradient and a distance between a wafer and a wafer facing plane.
    Type: Application
    Filed: October 2, 2003
    Publication date: March 25, 2004
    Inventors: Masaru Izawa, Shinichi Tachi, Ken?apos;etsu Yokogawa, Nobuyuki Negishi, Naoyuki Kofuji, Naoshi Itabashi, Seiji Yamamoto, Kazue Takahashi
  • Publication number: 20040038436
    Abstract: Disclosed is a method of manufacturing a semiconductor integrated circuit device which will not incur an increase in chip cost and a reduction in throughput, wherein the method includes a step of patterning a gate (electrode or wiring). With the method, a hard mask on the gate is patterned by a resist mask, and then the resist mask is removed. The gate material side surface is trimmed by using the hard mask under such dry etching conditions that no reaction product will be left on the gate material side surface to form an I-type gate.
    Type: Application
    Filed: September 20, 2002
    Publication date: February 26, 2004
    Applicants: Hitachi, Ltd., Hitachi High-Technologies Corporation
    Inventors: Masahito Mori, Takashi Tsutsumi, Masaru Izawa, Naoshi Itabashi
  • Publication number: 20040026040
    Abstract: A plasma processing apparatus which stably and continuously generates a uniform plasma to process large-diameter wafers using a wide range of seed gases under wide-ranging pressure and density conditions and can be thus used for a wide range of applications, ensuring a high production efficiency. The plasma processing apparatus, which introduces electromagnetic waves through a dielectric window into a reduced pressure vessel, has at least two antenna elements which are rotationally symmetrical. One end of each antenna is grounded and power is fed from a high frequency power supply to the other end in the same or virtually same phase.
    Type: Application
    Filed: September 20, 2002
    Publication date: February 12, 2004
    Applicants: Hitachi, Ltd., Hitachi High-Technologies Corporation
    Inventors: Masaru Kurihara, Naoyuki Kofuji, Naoshi Itabashi, Takashi Tsutsumi
  • Patent number: 6673685
    Abstract: A process for economical and efficient fabrication of gate electrodes no larger than 50 nm, which is beyond the limit of exposure, is characterized by gate-electrode trimming and mask trimming with high resist selectivity which are performed in combination. The process is also preferably characterized by performing trimming and drying cleaning in a vacuum environment and may also include steps of inspecting dimensions and contamination in a vacuum environment.
    Type: Grant
    Filed: February 27, 2002
    Date of Patent: January 6, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Masahito Mori, Naoshi Itabashi, Masaru Izawa
  • Publication number: 20030203641
    Abstract: A plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a standing wave controlling part provided near the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−1)±l/8: (n=positive integer, l=c(light velocity)/f/{square root}{square root over (&egr;)}) in terms of the characteristic length.
    Type: Application
    Filed: April 8, 2003
    Publication date: October 30, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Naoshi Itabashi, Naoyuki Kofuji, Yasunori Goto
  • Publication number: 20030049876
    Abstract: A process for economical and efficient fabrication of gate electrodes no larger than 50 nm, which is beyond the limit of exposure, is characterized by gate-electrode trimming and mask trimming with high resist selectivity which are performed in combination. The process is also preferably characterized by performing trimming and drying cleaning in a vacuum environment and may also include steps of inspecting dimensions and contamination in a vacuum environment.
    Type: Application
    Filed: February 27, 2002
    Publication date: March 13, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Masahito Mori, Naoshi Itabashi, Masaru Izawa
  • Publication number: 20020129904
    Abstract: To provide a stable and continuous plasma generation characteristic while maintaining uniformity of large diameter with a wide range of gas seeds, pressure and density so as to provide a plasma treatment apparatus with a wide application range and with high production efficiency, and a method of producing semiconductor device using it. The plasma treatment apparatus which introduces electromagnetic waves from a dielectric window into a chamber evacuated to low pressure has a part of controlling standing wave provided in the the periphery part of the dielectric window with the portions other than the entrance thereof being surrounded by conductor, having quality of material to fill up therein being made appropriate, and having shape and size thereof equivalent to depth d=l/4+l/2×(n−l)±l/8: (n=positive integer, l=c(light velocity)/f/{square root}{square root over (∈)}) in terms of the characteristic length.
    Type: Application
    Filed: September 4, 2001
    Publication date: September 19, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Naoshi Itabashi, Naoyuki Kofuji, Yasunori Goto
  • Publication number: 20020125206
    Abstract: Provided are an etching method which uses an additive gas stably suppliable also in future, is reduced in the problem of particle contamination, is free from the problem of removability of side-wall protection film and has high shape controlling capacity, and a manufacturing method a highly-reliable semiconductor device by using this etching method. This etching method comprises depositing metal film including an aluminum over a semiconductor device and etching the metal film with a plasma of a mixture gas containing a Cl2 gas, a BCl3 gas and a CH2Cl2 gas.
    Type: Application
    Filed: January 14, 2002
    Publication date: September 12, 2002
    Applicant: Hitachi, Ltd.
    Inventors: Naoyuki Kofuji, Masahito Mori, Naoshi Itabashi, Takashi Tsutsumi
  • Publication number: 20020084034
    Abstract: The processing with a low gate rate of destruction and high anisotropy is achieved in dry etching. Plasma is generated by ECR resonance of electromagnetic wave which arose by supplying Ultra High Frequency electric power in microstripline 4 arranged on the atmosphere side of a dielectric 2, which separates a vacuum inside and an outside and magnetic field. A conducting layer is etched by this plasma, which is stable and uniform plasma.
    Type: Application
    Filed: July 29, 1999
    Publication date: July 4, 2002
    Inventors: NAOYUKI KOFUJI, MASAHITO MORI, KEN?apos;ETSU YOKOGAWA, NAOSHI ITABASHI, KAZUNORI TSUJIMOTO, SHIN?apos;ICHI TACHI
  • Publication number: 20020020494
    Abstract: A plasma processing system includes a vacuum chamber having a gas introducing unit, and an electromagnetic wave introducing planar plate and electromagnets disposed in the chamber. A distance between the planar plate and a sample is equal to or less than one half of the smaller one of the diameters of the planar plate and the sample. An electromagnetic wave with a frequency ranging from 300 MHz to 500 MHz and an electromagnetic wave with a frequency ranging from 50 kHz to 30 MHz are superposed to the planar plate. Reaction between the resultant electromagnetic wave superposed and a magnetic field of the electromagnets generates plasma to achieve plasma processing of the sample.
    Type: Application
    Filed: June 21, 1999
    Publication date: February 21, 2002
    Inventors: KEN?apos;ETSU YOKOGAWA, MASARU IZAWA, NAOSHI ITABASHI, NOBUYUKI NEGISHI, SHINICHI TACHI
  • Patent number: 6033481
    Abstract: A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced.
    Type: Grant
    Filed: January 6, 1999
    Date of Patent: March 7, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Ken'etsu Yokogawa, Tetsuo Ono, Kazunori Tsujimoto, Naoshi Itabashi, Masahito Mori, Shinichi Tachi, Keizo Suzuki
  • Patent number: 5891252
    Abstract: A plasma processing apparatus in which power consumption is reduced, which can generate uniform plasma in a large range and in which minute processing in high etching selectivity and in high aspect ratio is enabled is disclosed. High density plasma is generated in a vacuum vessel housing a processed sample utilizing an electron cyclotron resonance phenomenon caused by an electromagnetic wave in an ultra-high frequency band and a magnetic field and the surface of the processed sample is etched using this plasma. An electromagnetic wave in an ultra-high frequency band for generating plasma is radiated from a planar conductive plate consisting of graphite or silicon which is arranged opposite to the surface of the processed sample into space inside the vacuum vessel. High density plasma in the low degree of dissociation can be generated by using an electromagnetic wave in an ultra-high frequency band and as a result, the controllability of etching reaction can be enhanced.
    Type: Grant
    Filed: December 13, 1996
    Date of Patent: April 6, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Ken'etsu Yokogawa, Tetsuo Ono, Kazunori Tsujimoto, Naoshi Itabashi, Masahito Mori, Shinichi Tachi, Keizo Suzuki
  • Patent number: 5714757
    Abstract: A surface analyzing method comprising an ion generation step for generating multiply-charged ions of specific ion species and specific charge state; a deceleration step for decelerating the generated multiply-charged ions to a lower kinetic energy than an energy of threshold of sputtering of an objective material; an irradiation step for irradiating the decelerated multiply-charged ions on the surface of a sample; and an analysis step for analyzing particles or light emitted from the surface of said sample by the irradiation of said multiply-charged ions. Apparatus is provided for carrying out the method.
    Type: Grant
    Filed: October 13, 1995
    Date of Patent: February 3, 1998
    Assignee: Hitachi, Ltd.
    Inventors: Naoshi Itabashi, Kozo Mochiji, Hiroyasu Shichi, Seiji Yamamoto, Satoshi Osabe, Keiichi Kanehori