Abstract: In a reflective liquid crystal apparatus, a drain electrode and a source electrode are formed on a insulating substrate and are formed by an aluminum alloy layer. The source electrode serves as a light reflecting pixel electrode. Also, a non-doped semiconductor layer is formed on a part of the drain electrode and a part of the source electrode, and impurity-doped semiconductor layers are formed between the drain and source electrodes and the non-doped semiconductor layer. Further, a gate electrode is formed via a gate insulating layer on the non-doped semiconductor layer. Additionally, a counter common electrode is formed on a transparent insulating substrate, and a liquid crystal layer is interposed between the insulating substrate and the transparent insulating substrate.

Abstract: Genes encoding a human PLC-.alpha. polypeptide are provided. An expression vector containing these genes and a transformant having the expression vector are provided. The human PLC-.alpha. polypeptide can be produced by cultivating the transformant. The human PLC-.alpha. polypeptide is useful as an anti-inflammatory agent. Furthermore, a measurement system for conducting clinical evaluation of canceration can be constructed by using the PLC-.alpha. polypeptide.

Abstract: In a method of manufacturing a thin film transistor, a light shielding gate electrode is formed on a transparent insulating substrate. On the substrate including the gate electrode are laminated a gate insulating film, a semiconductor film, a protection insulating film, and a photoresist film. The photoresist film is patterned in alignment with the gate electrode. The protection insulating film is isotropically etched using the patterned photoresist film as a mask to have inclined portions. After the surface of the semiconductor film is rinsed to remove a natural oxide film, a metal film is deposited to form a metal silicide layer in alignment with the patterned protection insulating film. The metal film is patterned in such a manner that the metal portions are separated from the patterned protection insulating film.