Abstract: A laser device is provided including a surface emitting laser array configured to emit light, an optical system disposed in an optical path of light that is emitted from the surface emitting laser, a laser resonator which the light passed through the optical system enters, where the optical system includes a first optical element configured to collimate the light emitted from the surface emitting laser, and a second optical element configured to collect and condense the light collimated by the first optical element.

Abstract: A surface-emitting laser array includes a plurality of light emitting parts. Each light emitting part includes a reflection mirror including aluminum gallium arsenide (AlxGa(1-x)As) where x is greater than 0.95 but less than or equal to 1; an active layer; and an electrode surrounding an emission region, from which laser light is emitted, the electrode covering a region between adjacent light emitting parts in the plurality of light emitting parts.

Abstract: An optical device includes a semiconductor element configured to emit emission light or to receive incident light, including a first fitting part including a portion having a convex shape in a first region; an optical member arranged on an optical path of the emission light emitted from the semiconductor element or the incident light entering the semiconductor element, including a second fitting part fitted to at least a part of the portion having the convex shape, the first region being opposed to the optical member; and a joint part that joins the semiconductor element and the optical member, arranged between the first fitting part and the second fitting part.

Abstract: An optical window member includes an incident surface onto which a laser light is directed and an exit surface from which the laser light exits. At least one of the incident surface and the exit surface has a plurality of protrusions or recesses formed therein. An interval between centers of adjacent protrusions or adjacent recesses is shorter than or equal to a wavelength of the laser light.

Abstract: A surface-emitting laser includes an active layer on which a spacer layer is disposed, and a reflection mirror disposed on the spacer layer, including a current constriction layer that is a selectively-oxidized layer having been selectively oxidized. The current constriction layer is disposed at a position of a node of a standing-wave of an electric field of light oscillated at the active layer and is disposed away from an interface between the spacer layer and the reflection mirror by an optical distance of one-fourth of an oscillation wavelength at the active layer. The selectively-oxidized layer is made of AlGaAs. The reflection mirror includes at least one AlGaInP layer contacting the selectively-oxidized layer.

Abstract: A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

Abstract: An optical device includes a semiconductor element configured to emit emission light or to receive incident light, including a first fitting part including a portion having a convex shape in a first region; an optical member arranged on an optical path of the emission light emitted from the semiconductor element or the incident light entering the semiconductor element, including a second fitting part fitted to at least a part of the portion having the convex shape, the first region being opposed to the optical member; and a joint part that joins the semiconductor element and the optical member, arranged between the first fitting part and the second fitting part.

Abstract: A surface-emitting laser includes a plurality of semiconductor layers; an active layer; and spacer layers, between which the active layer is held. The active layer includes a first layer including aluminum gallium indium arsenide ((AlxGa1-x)yIn1-yAs, where x and y are greater than or equal to zero but less than one), and a second layer including aluminum gallium indium arsenide ((AlmGa1-m)nIn1-nAs, where m and n are greater than or equal to zero but less than one, and at least one of m-x and n-y is not zero). The spacer layers includes aluminum gallium indium phosphide ((AlaGa1-a)bIn1-bP, where a and b are greater than or equal zero but less than one). The plurality of semiconductor layers and the active layer held between the spacer layers are laminated.

Abstract: A laser device is provided including a surface emitting laser array configured to emit light, an optical system disposed in an optical path of light that is emitted from the surface emitting laser, a laser resonator which the light passed through the optical system enters, where the optical system includes a first optical element configured to collimate the light emitted from the surface emitting laser, and a second optical element configured to collect and condense the light collimated by the first optical element.

Abstract: A laser device is provided including a light source configured to emit light, a light transmission member configured to transmit the light emitted from the light source, a plurality of optical elements disposed in an optical path of the light transmitted by the light transmission member, a laser resonator which the light passed through the plurality of optical elements enter, and an adjuster configured to adjust a position of at least one of the plurality of optical elements.

Abstract: A laser device is provided including a light source configured to emit light, a laser resonator which the light emitted from the light source enters, a first optical element configured to increase a divergence angle of the light emitted from the laser resonator, a second optical element configured to collimate the light whose divergence angle is increased by the first optical element, and a third optical element configured to collect and condense the light collimated by the second optical element.

Abstract: A surface-emitting laser apparatus includes a surface-emitting laser substrate; a microlens substrate; and an adhesion agent. The surface-emitting laser substrate includes a semiconductor substrate; and a surface-emitting laser and plural first adhesion fixing regions formed on a first face of the semiconductor substrate. The microlens substrate includes a microlens configured to receive light emitted by the surface-emitting laser; plural pier portions protruding toward a side of the first face of the semiconductor substrate; and plural second adhesion fixing regions, formed at positions corresponding to the first adhesion fixing regions on surfaces of the pier portions. The adhesive agent causes the first adhesion fixing regions and the second adhesion fixing regions to adhere to each other. A restoring force acts on the adhesive agent in a case where the adhesive agent is melted.

Abstract: A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

Abstract: A disclosed surface-emitting laser element includes a resonator structure having an active layer, a first semiconductor multilayer mirror and a second semiconductor multilayer mirror configured to sandwich the resonator structure having the active layer, an electrode provided around an emission region of a light-emitting surface, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than a reflectance of the central portion. In the surface-emitting laser element, an outer shape of a portion where the electrode provided around the emission region of the light-emitting surface is in contact with a contact layer includes corners.

Abstract: A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.

Abstract: A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to be manufactured with high yield rate.

Abstract: In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components such that the semiconductor layer containing Al, In and P as major components is provided adjacent to the semiconductor layer that contains Al, Ga and As as major components. Further, an interface between the semiconductor layer containing Al, Ga and As as major components and the semiconductor layer containing Al, In and P as major components is coincident to a location of a node of electric field strength distribution.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.