Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: In a surface emitting laser element, on a substrate whose normal direction of a principal surface is inclined, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the resonator structural body are stacked. A shape of a current passing through region in an oxide confinement structure of the upper semiconductor DBR is symmetrical to an axis passing through a center of the current passing through region parallel to an X axis and symmetrical to an axis passing through the center of the current passing through region parallel to a Y axis, and a length of the current passing through region is greater in the Y axis direction than in the X axis direction. A thickness of an oxidized layer surrounding the current passing through region is greater in the ?Y direction than in the +X and ?X directions.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A semiconductor oxidation apparatus is provided with a sealable oxidation chamber defined by walls, a base provided within the oxidation chamber and configured to support a semiconductor sample, a supply part configured to supply water vapor into the oxidation chamber to oxidize a specific portion of the semiconductor sample, a monitoring window provided in one of the walls of the oxidation chamber and disposed at a position capable of confronting the semiconductor sample supported on the base, a monitoring part provided outside the oxidation chamber and capable of confronting the semiconductor sample supported on the base via the monitoring window, and an adjusting part configured to adjust a distance between the base and the monitoring part.

Abstract: A disclosed surface-emitting laser element includes an emission region configured to emit a laser beam and a high reflectance region including a first dielectric film having a first refractive index and a second dielectric film having a second refractive index differing from the first refractive index where the first dielectric film and the second dielectric film are stacked within the emission region to provide high reflectance. In the surface-emitting laser element, the high reflectance region is formed in a region including a central portion of the emission region and is configured to include shape anisotropy in two orthogonal directions in a plane in parallel with the emission region.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A disclosed surface-emitting laser element includes a resonator structure having an active layer, a first semiconductor multilayer mirror and a second semiconductor multilayer mirror configured to sandwich the resonator structure having the active layer, an electrode provided around an emission region of a light-emitting surface, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than a reflectance of the central portion. In the surface-emitting laser element, an outer shape of a portion where the electrode provided around the emission region of the light-emitting surface is in contact with a contact layer includes corners.

Abstract: A disclosed surface-emitting laser element includes a substrate, multiple semiconductor layers stacked on the substrate including a resonator structure including an active layer, a semiconductor multilayer mirror on the resonator structure, and a confined structure where a current passage region is enclosed by at least an oxide generated by oxidation of part of a selective oxidation layer containing aluminum, an electrode provided around an emission region, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than that of the central portion. The dielectric film is arranged such that a reflectance of a high-order transverse mode in a second direction is higher than that in a first direction, and a width of the current passage region in the first direction is greater than that in the second direction.

Abstract: A surface-emission laser diode includes an active layer, a pair of cavity spacer layers formed at both sides of the active layer, a current confinement structure defining a current injection region into the active layer, and a pair of distributed Bragg reflectors opposing with each other across a structure formed of the active layer and the cavity spacer layers, the current confinement structure being formed by a selective oxidation process of a semiconductor layer, the pair of distributed Bragg reflectors being formed of semiconductor materials, wherein there is provided a region containing an oxide of Al and having a relatively low refractive index as compared with a surrounding region in any of the semiconductor distributed Bragg reflector or the cavity spacer layer in correspondence to a part spatially overlapping with the current injection region in a laser cavity direction.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.

Abstract: A surface emitting laser element is disclosed. The surface emitting laser element includes a resonator structural body including an active layer, first and second semiconductor distributed Bragg reflectors which sandwich the resonator structural body, and a confinement structure which can confine an injection current and a lateral mode of oscillation light at the same time by being formed with selective oxidation of a layer to be selectively oxidized containing aluminum in the first semiconductor distributed Bragg reflector. A thickness of the layer to be selectively oxidized is 28 nm, and a temperature when an oscillation threshold current becomes a minimum value is approximately 17° C.

Abstract: A vertical-cavity, surface-emission-type laser diode includes an optical cavity formed of an active region sandwiched by upper and lower reflectors, wherein the lower reflector is formed of a distributed Bragg reflector and a non-optical recombination elimination layer is provided between an active layer in the active region and the lower reflector.

Abstract: A surface-emitting laser diode device that oscillates in a direction perpendicular to the substrate is provided. This surface-emitting laser diode device includes: an active layer; a resonator structure including a first distributed Bragg reflector and a second distributed Bragg reflector that face each other and sandwich the active layer; a hole passage that extends from a first electrode to the active layer; an electron passage that extends from a second electrode to the active layer; a hole restricting structure that is located in the hole passage and defines a region for confining holes to the active layer; and an optical mode control structure that includes a non-oxide region provided in the resonator structure and an oxide region surrounding the non-oxide region, each region containing Al as a constituent element. In this surface-emitting laser diode, the area of the non-oxide region is smaller than the area of the hole restricting structure.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.

Abstract: A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode oscillation and to oscillate at high output in a single fundamental transverse mode. The surface emitting laser device includes a first resonance region that includes an active layer and spacer layers, two distributed Bragg reflectors that sandwich the resonance region, and a current confinement structure that defines a current injection region for the active layer. At least one of the distributed Bragg reflectors includes a second resonance region arranged in the current injection region excluding a predetermined region surrounding a center of the current injection region.

Abstract: A vertical cavity surface emitting laser element is provided that includes a substrate, a first semiconductor multilayer reflector including plural pairs of layers having differing refractive indexes and thermal resistances, a resonator region including an active layer, and a second semiconductor multilayer reflector including plural pairs of layers having differing refractive indexes and thermal resistances.

Abstract: A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.