Abstract: A disclosed surface-emitting laser element includes an emission region configured to emit a laser beam and a high reflectance region including a first dielectric film having a first refractive index and a second dielectric film having a second refractive index differing from the first refractive index where the first dielectric film and the second dielectric film are stacked within the emission region to provide high reflectance. In the surface-emitting laser element, the high reflectance region is formed in a region including a central portion of the emission region and is configured to include shape anisotropy in two orthogonal directions in a plane in parallel with the emission region.

Abstract: In a surface-emission laser diode, there is provided, between an active layer and a semiconductor layer that contains AI, Ga and As as major components, a semiconductor layer containing AI, In and P as major components such that the semiconductor layer containing AI, In and P as major components is provided adjacent to the semiconductor layer that contains AI, Ga and As as major components. Further, an interface between the semiconductor layer containing AI, Ga and As as major components and the semiconductor layer containing AI, In and P as major components is coincident to a location of a node of electric field strength distribution.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A surface-emitting laser includes a substrate; a lower semiconductor multilayer film reflector disposed on the substrate; a resonator structure including an active layer and disposed on the lower semiconductor multilayer film reflector; and an upper semiconductor multilayer film reflector disposed on the resonator structure. The second semiconductor multilayer film reflector includes a confinement structure in which a current passage region is surrounded by an oxidized portion of a selectively oxidized layer containing aluminum. An emission region includes a central portion and a peripheral portion, the peripheral portion being covered with a transparent dielectric film whose reflectivity is lower than a reflectivity of the central portion. The selectively oxidized layer has a thickness in a range from 30 nm to 40 nm. The temperature at which an oscillation threshold current is minimized is 60° C. or lower.

Abstract: A surface emitting laser element is disclosed. The surface emitting laser element includes a resonator structural body including an active layer, first and second semiconductor distributed Bragg reflectors which sandwich the resonator structural body, and a confinement structure which can confine an injection current and a lateral mode of oscillation light at the same time by being formed with selective oxidation of a layer to be selectively oxidized containing aluminum in the first semiconductor distributed Bragg reflector. A thickness of the layer to be selectively oxidized is 28 nm, and a temperature when an oscillation threshold current becomes a minimum value is approximately 17° C.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Abstract: A surface-emitting laser device configured to emit laser light in a direction perpendicular to a substrate includes a p-side electrode surrounding an emitting area on an emitting surface to emit the laser light; and a transparent dielectric film formed on an outside area outside a center part of the emitting area and within the emitting area to lower a reflectance to be less than that of the center part. The outside area within the emitting area has shape anisotropy in two mutually perpendicular directions.

Abstract: A disclosed surface-emitting laser element includes a substrate, multiple semiconductor layers stacked on the substrate including a resonator structure including an active layer, a semiconductor multilayer mirror on the resonator structure, and a confined structure where a current passage region is enclosed by at least an oxide generated by oxidation of part of a selective oxidation layer containing aluminum, an electrode provided around an emission region, and a dielectric film provided in a peripheral portion within the emission region and outside a central portion of the emission region to make a reflectance of the peripheral portion lower than that of the central portion. The dielectric film is arranged such that a reflectance of a high-order transverse mode in a second direction is higher than that in a first direction, and a width of the current passage region in the first direction is greater than that in the second direction.

Abstract: A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.

Abstract: A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg reflector includes a semiconductor layer containing Al, Ga and As as major components, there being provided, between the active layer and the semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components adjacent to the semiconductor layer that contains Al, Ga and As as major components, with an interface formed coincident to a location of a node of electric strength distribution.

Abstract: A surface-emission laser device comprises an active layer, cavity spacer layers provided at both sides of the active layer, reflection layers provided at respective sides of the cavity spacer layers, the reflection layers reflecting an oscillation light oscillated in the active layer and a selective oxidation layer. The selective oxidation layer is provided between a location in the reflection layer corresponding to a fourth period node of the standing wave distribution of the electric field of the oscillating light and a location in the reflection layer adjacent to the foregoing fourth period node in the direction away from the active layer and corresponding to an anti-node of the standing wave distribution of the electric field of the oscillation light.

Abstract: A surface emitting laser diode comprises a substrate, a lower reflector formed over the substrate, an active layer formed over the lower reflector, an upper reflector formed over the active layer, a current restrict structure including a current confinement region surrounded by insulation region. The current restrict structure is disposed in an upper reflector or between an active layer and the upper reflector, and an upper electrode formed over the upper reflector includes an aperture which corresponds to an emission region from which light is emitted in a first direction perpendicular to a surface of a substrate. The emission region and the current restrict structure including the current confinement region are selectively configured to obtain high single transverse mode, stabilized polarization direction, isotropic beam cross section and small divergence angle, while allowing the device to he manufactured with high yield rate.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A surface-emission laser diode includes a GaAs substrate, a cavity region, and upper and lower reflectors provided at a top part and a bottom part of the cavity region, the upper reflector and/or the lower reflector including a semiconductor Bragg reflector, at least a part of the semiconductor distributed Bragg reflector includes a semiconductor layer containing Al, Ga and As as major components, there being provided, between the active layer and the semiconductor layer that contains Al, Ga and As as major components, a semiconductor layer containing Al, In and P as major components adjacent to the semiconductor layer that contains Al, Ga and As as major components, with an interface formed coincident to a location of a node of electric strength distribution.

Abstract: A disclosed surface emitting laser is capable of being manufactured easily, having a higher yield and a longer service lifetime. In the surface emitting laser, a selectively-oxidized layer is included as a part of a low refractive index layer of an upper semiconductor distribution Bragg reflector; the low refractive index layer including the selectively-oxidized layer includes two intermediate layers adjoining the selectively-oxidized layer and two low refractive index layers adjoining the intermediate layers. Al content rate in the intermediate layers is lower than that in the selectively-oxidized layer, and Al content rate in the low refractive index layers is lower than that in the selectively-oxidized layer. This configuration enables providing more control over the thickness and oxidation rate of the oxidized layer, thereby enabling reducing the variation of the thickness of the oxidized layer.

Abstract: A surface-emission laser diode comprises a cavity region over a semiconductor substrate and includes an active layer containing at least one quantum well active layer producing a laser light and a barrier layer, a spacer layer is provided in the vicinity of the active layer and formed of at least one material, an upper and lower reflectors are provided at a top part and a bottom part of the cavity region, the cavity region and the upper and lower reflectors form a mesa structure over the semiconductor substrate, the upper and lower reflectors being formed of a semiconductor distributed Bragg reflector having a periodic change of refractive index and reflecting incident light by interference of optical waves, at least a part of the semiconductor distributed Bragg reflector is formed of a layer of small refractive index of AlxGa1-xAs (0<x?1) and a layer of large refractive index of AlyGa1-yAs (0?y<x?1), the lower reflector is formed of a first lower reflector having a low-refractive index layer of AlAs an

Abstract: A surface-emitting laser includes a substrate; a lower semiconductor multilayer film reflector disposed on the substrate; a resonator structure including an active layer and disposed on the lower semiconductor multilayer film reflector; and an upper semiconductor multilayer film reflector disposed on the resonator structure. The second semiconductor multilayer film reflector includes a confinement structure in which a current passage region is surrounded by an oxidized portion of a selectively oxidized layer containing aluminum. An emission region includes a central portion and a peripheral portion, the peripheral portion being covered with a transparent dielectric film whose reflectivity is lower than a reflectivity of the central portion. The selectively oxidized layer has a thickness in a range from 30 nm to 40 nm. The temperature at which an oscillation threshold current is minimized is 60° C. or lower.

Abstract: A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorporated into said active layer together with Al is set to a level such that said semiconductor light-emitting device can perform a continuous laser oscillation at room temperature.

Abstract: A disclosed surface-emitting laser includes a substrate and multiple semiconductor layers stacked on the substrate. A normal of the principal plane of the substrate is inclined with respect to one of crystal orientations <1 0 0> toward one of crystal orientations <1 1 1>. The semiconductor layers include a resonator structure including an active layer; and a semiconductor multilayer mirror stacked on the resonator structure. The semiconductor multilayer mirror includes a confined structure where a current passage area is surrounded by an oxidized area including at least an oxide generated by oxidation of a part of a selective oxidation layer containing aluminum. A strain field caused by the oxidation is present at least in a part of the vicinity of the oxidized area. In the strain field, the amount of strain in a first axis direction is different from the amount of strain in a second axis direction.