Abstract: Signal distribution, signal switching, and signal collection are performed with a simple configuration. An electronic device comprises a transmission unit (108) for transmitting, as a wireless signal, a signal to be transmitted and a reception unit (208) for receiving the wireless signal transmitted from the transmission unit. In the electronic device, a plurality of pairs of wireless signal transmission points in the transmission unit and wireless signal reception points in the reception unit can be formed. Using the pairs of transmission points and reception points make it possible to execute at least either one of signal distribution in which the same signal to be transmitted from a transmission point is transmitted to the multiple reception points and signal switching in which a signal to be transmitted from a transmission point is selectively transmitted to any of the multiple reception points. The signal to be transmitted is transmitted as a wireless signal.

Abstract: [Problem] This invention aims at solving the problem of how a subscriber premises-side optical network unit can be switched to an evaluation mode without the use of a jig board. [Means for Solving the Problem] The invention refers to a subscriber premises-side optical network unit (ONU 10) which is connected to a center-side optical network unit (OLT 1a) via an optical transmission line (optical fiber 2, 4) and to an external device (switch 6) via an electric signal line (electric signal line 5); comprising a memory (memory switch 15a) the stored content of which can be directly or indirectly rewritten by the external device; a detection part (CPU 15) for detecting that the content of the memory has been rewritten; and a control part (CPU 15) for performing, when the detection part detects that the stored content of the memory has been rewritten, a control whereby the optical sending part which sends optical signals to the optical transmission line is put into a continuous light emission state.

Abstract: A method of forming a film and a substrate processing apparatus, which can increase the number of substrates to be processed at once in order to improve productivity, are provided. In order to solve the problems, the method of forming a film includes loading a plurality of substrates into a substrate processing region in a processing chamber; and forming a film containing nitrogen and metal on each of the plurality of substrates by heating the substrate processing region in the processing chamber, supplying a nitrogen-containing gas through a first gas supply port installed outside the substrate processing region in the processing chamber, and supplying a metal-containing gas through a second gas supply port installed closer to the substrate processing region than the first gas supply port.

Abstract: Provided is a stacked organic light-emitting device in which organic compound layers for respective emission colors are capable of separately emitting light. The stacked organic light-emitting device includes a first organic compound layer, a second organic compound layer, and a third organic compound layer, which have emission colors different from each other. The first organic compound layer is provided on one side of a common transparent electrode, and the second organic compound layer and the third organic compound layer are provided on another side thereof. The first organic compound layer has a polarity direction opposite to polarity directions of the second organic compound layer and the third organic compound layer.

Abstract: An organic light-emitting device has a substrate and a plurality of organic light-emitting elements formed on the substrate. The plurality of the organic light-emitting elements include a first light-emitting element emitting light of a first emission color, and a second light-emitting element emitting light of a different emission color. Each light-emitting element has, in sequence, a first electrode having a light reflection layer and a transparent conductive layer, an organic compound layer containing a light-emitting layer, and a second electrode on the substrate. The light reflection layer of the first element is between the substrate and the transparent conductive layer and the light reflection layer of the second element is between the transparent conductive layer and the organic compound layer. A thickness of the transparent conductive layer of the first and second organic light-emitting elements is the same.

Abstract: To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing. The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 ?m to 1,000 ?m. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

Abstract: An organic light-emitting element includes a first electrode, a second electrode, and at least one organic compound layer disposed between the first electrode and the second electrode. The organic compound layer includes a light-emitting layer containing a light-emitting material and being configured to emit light toward the first electrode and the second electrode. The light emitted toward the first electrode is reflected from a reflection plane located at the first electrode to cause interference with the light emitted toward the second electrode. The interference provides an interference intensity distribution having a maximum peak at a wavelength ?1. The light-emitting material of the light-emitting layer exhibits a photoluminescence spectrum having a maximum peak at a wavelength ?2. The organic light-emitting element produces an electroluminescence spectrum having a maximum peak at a wavelength ?3. These wavelengths satisfy the relationships: ?2??3 and |?2??3|<|?2??1|.

Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support is formed from a main body portion and a supporting portion. In the main body portion, a plurality of placing portions extend parallel, and supporting portions are provided on the placing portions. A substrate is placed on the supporting portion. The supporting portion has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion.

Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.

Abstract: A method is provided with a step of supplying a reacting furnace (200) with a plurality of gases which react each other and an inert gas and oxidizing a substrate (20) under an atmospheric pressure, and a step of carrying out the substrate (20) after oxidizing from the reacting furnace. In the oxidizing step, the partial pressure of the oxidizing gas is kept constant by changing a flow quantity of the inert gas in accordance with atmospheric pressure variation, and a flow quantity of the inert gas is calculated based on a previously calculated flow quantity of a gas generated by the reaction of the gases and a gas remained without being consumed by the reaction.

Abstract: An engine ECU executes a program including the steps of: calculating a fuel injection ratio of an in-cylinder injector; calculating an amount of spark advance using a first map employed when the in-cylinder injector has a fuel injection ratio of one, said first map providing a timing of ignition with a maximum amount of spark advance; calculating an amount of spark advance using a second map employed for a fuel injection ratio of zero, said second map providing a timing of ignition with a minimum amount of spark advance; and calculating an amount of spark advance using a third map employed for a fuel injection ratio larger than zero and smaller than one, said third map providing a timing of ignition with a larger amount of spark advance for a larger ratio.

Abstract: An image-forming device includes, in an envelope, an electron-emitting element for emitting an electron by applying a voltage between electrodes, an image-forming member for forming an image by irradiation with an electron beam emitted from the electron-emitting element, and a supporting member for supporting the envelope. The supporting member has an electroconductive film at an end portion and a side portion thereof, and is electrically connected through the electroconductive film to the electrode.

Abstract: A thermal treatment apparatus, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, wherein the occurrence of slip dislocation in a substrate during heat treatment is reduced, and a high-quality semiconductor device can be manufactured, are intended to be provided. A substrate support 30 is formed from a main body portion 56 and a supporting portion 58. In the main body portion 56, a plurality of placing portions 66 extend parallel, and supporting portions 58 are provided on the placing portions 66. A substrate 68 is placed on the supporting portion 58. The supporting portion 58 has a smaller area than an area of a flat face of the substrate, and is formed from a silicon plate having a thickness larger than thickness of the substrate, so that deformation during heat treatment is reduced. The supporting portion 58 is made of silicon, and a layer coated with silicon carbide (SiC) is formed on a substrate-placing face of the supporting portion 58.

Abstract: Provided is a multicolor organic light emitting apparatus having a plurality of organic light emitting devices formed on a substrate, for emitting two or more types of luminescent colors. A thickness of a layer formed between a light emitting layer and a reflection surface of a cathode is the same as that of each of first and second organic light emitting devices, and an optical distance between a light emitting surface of each of the light emitting layers and the reflection surface of the cathode is adjusted such that each thickness of the light emitting layers is varied to enhance light emitted from the light emitting layers by optical interference.

Abstract: A method of manufacturing a semiconductor device which has a cleaning process for cleaning a surface of a substrate while rotating the substrate. The cleaning process includes the steps of cleaning the substrate surface by supplying a cleaning liquid to the substrate; rinsing the cleaned substrate surface by supplying a rinse liquid containing pure water to the substrate; and drying the rinsed substrate. In the rinsing step, HF is added to the rinse liquid.

Abstract: [Problems] To prevent both slips caused by damage from projections, and slips caused by adhesive force occurring due to excessive smoothing. [Means for Solving the Problems] The heat treating apparatus includes a processing chamber for heat treating wafers and a boat for supporting the wafers in the processing chamber. The boat further includes a wafer holder in contact with the wafer and a main body for supporting the wafer holder. The wafer holder diameter is 63 to 73 percent of the wafer diameter, and the surface roughness Ra of the portion of the wafer holder in contact with the wafer is set from 1 ?m to 1,000 ?m. The wafer can be supported so that the amount of wafer displacement is minimal and both slips due to damage from projections on the wafer holder surface, and slips due to the adhesive force occurring because of excessive smoothing can be prevented in that state.

Abstract: The present invention provides an organic light-emitting device including a substrate and a plurality of organic light-emitting elements formed on the substrate, wherein the plurality of the organic light-emitting elements include a first organic light-emitting element which emits a light of a first emission color, and a second organic light-emitting element which emits a light of a second emission color different from the first emission color; each of the organic light-emitting elements has a first electrode having a light reflection layer and a transparent conductive layer, an organic compound layer containing a light-emitting layer, and a second electrode as a light extraction electrode, in mentioned order on the substrate; the light reflection layer of the first organic light-emitting element is formed between the substrate and the transparent conductive layer; the light reflection layer of the second organic light-emitting element is formed between the transparent conductive layer and the organic compoun

Abstract: An engine ECU executes a program including the steps of: calculating a fuel injection ratio of an in-cylinder injector; calculating an amount of spark advance using a first map employed when the in-cylinder injector has a fuel injection ratio of one, said first map providing a timing of ignition with a maximum amount of spark advance; calculating an amount of spark advance using a second map employed for a fuel injection ratio of zero, said second map providing a timing of ignition with a minimum amount of spark advance; and calculating an amount of spark advance using a third map employed for a fuel injection ratio larger than zero and smaller than one, said third map providing a timing of ignition with a larger amount of spark advance for a larger ratio.

Abstract: An engine ECU executes a program including the steps of: calculating a fuel injection ratio of an in-cylinder injector; calculating an amount of spark advance using a first map employed when the in-cylinder injector has a fuel injection ratio of one, said first map providing a timing of ignition with a maximum amount of spark advance; calculating an amount of spark advance using a second map employed for a fuel injection ratio of zero, said second map providing a timing of ignition with a minimum amount of spark advance; and calculating an amount of spark advance using a third map employed for a fuel injection ratio larger than zero and smaller than one, said third map providing a timing of ignition with a larger amount of spark advance for a larger ratio.

Abstract: An electron beam apparatus includes an electron source having an electron-emitting device, an electrode for controlling an electron beam emitted from the electron source, a target to be irradiated with an electron beam emitted from the electron source and a spacer arranged between the electron source and the electrode. The spacer has a semiconductor film on the surface thereof that is electrically connected to the electron source and the electrode.