Abstract: To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.

Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

Abstract: Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.

Abstract: To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

Abstract: A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor.

Abstract: A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor.

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a manufacturing process of a semiconductor device that includes a bottom-gate transistor including an oxide semiconductor, an insulating film which is in contact with an oxide semiconductor film is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order. The insulating film which is in contact with the oxide semiconductor film refers to a gate insulating film provided under the oxide semiconductor film and an insulating film which is provided over the oxide semiconductor film and functions as a protective insulating film. The gate insulating film and/or the insulating film are/is subjected to dehydration or dehydrogenation treatment by heat treatment and oxygen doping treatment in this order.

Abstract: A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.

Abstract: A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.

Abstract: A semiconductor device which can operate at high speed and consumes a smaller amount of power is provided. In a semiconductor device including transistors each including an oxide semiconductor, the oxygen concentration of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from that of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current. Typically, the oxygen concentration of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current is lower than that of the oxide semiconductor film of the transistor having small current at negative gate voltage.

Abstract: Provided is a semiconductor device in which an oxide semiconductor layer is provided; a pair of wiring layers which are provided with the gate electrode layer interposed therebetween are electrically connected to the low-resistance regions; and electrode layers are provided to be in contact with the low-resistance regions, below regions where the wiring layers are formed.

Abstract: A semiconductor device which is miniaturized and has sufficient electrical characteristics to function as a transistor is provided. In a semiconductor device including a transistor in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are stacked in that order, an oxide semiconductor film which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and in which the percentage of the indium is twice or more as large as each of the percentage of the gallium and the percentage of the zinc when the composition of the four elements is expressed in atomic percentage is used as the semiconductor layer. In the semiconductor device, the oxide semiconductor film is a film to which oxygen is introduced in the manufacturing process and contains a large amount of oxygen, and an insulating layer including an aluminum oxide film is provided to cover the transistor.

Abstract: A semiconductor device which can operate at high speed and consumes a smaller amount of power is provided. In a semiconductor device including transistors each including an oxide semiconductor, the oxygen concentration of the oxide semiconductor film of the transistor having small current at negative gate voltage is different from that of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current. Typically, the oxygen concentration of the oxide semiconductor film of the transistor having high field-effect mobility and large on-state current is lower than that of the oxide semiconductor film of the transistor having small current at negative gate voltage.

Abstract: A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.

Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

Abstract: A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.

Abstract: It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.

Abstract: A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.

Abstract: It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.

Abstract: A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.