Patents by Inventor Naoto Yamade

Naoto Yamade has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Doping apparatus, doping method, and method for fabricating thin film transistor
    Patent number: 7713761
    Abstract: It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: May 11, 2010
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Naoto Yamade
  • Display device and manufacturing method thereof
    Publication number: 20080105877
    Abstract: A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.
    Type: Application
    Filed: December 14, 2007
    Publication date: May 8, 2008
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Osamu Nakamura, Aki Yamamiti, Naoto Yamade
  • Display device and manufacturing method thereof
    Patent number: 7314785
    Abstract: A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.
    Type: Grant
    Filed: October 20, 2004
    Date of Patent: January 1, 2008
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Osamu Nakamura, Aki Yamamiti, Naoto Yamade
  • Doping apparatus, doping method, and method for fabricating thin film transistor
    Publication number: 20070224711
    Abstract: It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
    Type: Application
    Filed: May 18, 2007
    Publication date: September 27, 2007
    Inventors: Junichi Koezuka, Naoto Yamade
  • Doping method and method for fabricating thin film transistor
    Patent number: 7250312
    Abstract: It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
    Type: Grant
    Filed: August 4, 2004
    Date of Patent: July 31, 2007
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Naoto Yamade
  • Display device and manufacturing method thereof
    Publication number: 20050087769
    Abstract: A display device with improved reliability and a manufacturing method of the same with improved yield. A display device according to the invention comprises a display area including a first electrode, an insulating layer covering an edge of the first electrode, a layer containing an organic compound, which is formed on the first electrode, and a second electrode. The first electrode and the insulating layer are doped with an impurity element of one conductivity.
    Type: Application
    Filed: October 20, 2004
    Publication date: April 28, 2005
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Osamu Nakamura, Aki Yamamiti, Naoto Yamade
  • Doping apparatus, doping method, and method for fabricating thin film transistor
    Publication number: 20050032341
    Abstract: It is an object of the present invention to provide a doping apparatus, a doping method, and a method for fabricating a thin film transistor that can carry out doping to the carrier concentration which is optimum for obtaining the desired electric characteristic non-destructively and in an easy manner. In accordance with the present invention, an electric characteristic of a semiconductor element (threshold voltage in a transistor and the like) is correctly and precisely monitored by using a contact angle, and is controlled by controlling a doping method. In addition, the present invention can be momentarily acquired information by in-situ monitoring the characteristic and can be fed back without a time lag.
    Type: Application
    Filed: August 4, 2004
    Publication date: February 10, 2005
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Junichi Koezuka, Naoto Yamade