Abstract: A method for manufacturing a nonvolatile storage device including: a plurality of first electrodes aligning in a first direction; a plurality of second electrodes aligning in a second direction nonparallel to the first direction and provided above the first electrodes; and a first storage unit provided between the first electrode and the second electrode and including a first storage layer, a resistance of the first storage layer changing by at least one of an applied electric field and an applied current, the method includes: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a major surface of a substrate; processing the first electrode film and the first storage unit film into a strip shape aligning in the first direction; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the

Abstract: The cleaning method by electrolytic sulfuric acid and the manufacturing method of semiconductor device comprising: the process in which the first sulfuric acid solution is supplied from outside to the sulfuric acid electrolytic cell to form the first electrolytic sulfuric acid containing oxidizing agent in the sulfuric acid electrolytic cell; the process in which the second sulfuric acid solution, which is higher in concentration than said the first sulfuric acid solution previously supplied, is supplied from outside to said sulfuric acid electrolytic cell; said the second sulfuric acid solution and the first electrolytic sulfuric acid are mixed in said sulfuric acid electrolytic cell; and electrolysis is performed to form the cleaning solution comprising the second electrolytic sulfuric acid containing sulfuric acid and oxidation agent in said sulfuric acid electrolytic cell and the process in which cleaning treatment is performed for the cleaning object with said cleaning solution.

Abstract: In a sulfuric acid electrolytic cell to electrolyze sulfuric acid supplied to an anode compartment and a cathode compartment comprising a diaphragm, said anode compartment and said cathode compartment separated by said diaphragm, a cathode provided in said cathode compartment and a conductive diamond anode provided in said anode compartment, as said conductive diamond anode, a conductive diamond film is formed on the surface of said conductive substrate, the rear face of said conductive substrate is pasted, with conductive paste, on an current collector comprising a rigid body with size equal to, or larger than, said conductive substrate, an anode compartment frame constituting said anode compartment is contacted via gasket with the periphery on the side of the conductive diamond film of said diamond anode, said diaphragm is contacted with the front face of said anode compartment, further, with the front face of said diaphragm, the cathode compartment frame constituting said cathode compartment, a gasket, and

Abstract: Sulfuric acid electrolysis process wherein; a temperature of electrolyte containing sulfuric acid to be supplied to an anode compartment and a cathode compartment is controlled to 30 degree Celsius or more; a flow rate F1 (L/min.) of the electrolyte containing sulfuric acid to be supplied to said anode compartment is controlled to 1.5 times or more (F1/Fa?1.5) a flow rate Fa (L/min.) of gas formed on an anode side as calculated from Equation (1) shown below and a flow rate F2(L/min.) of said electrolyte containing sulfuric acid to be supplied to said cathode compartment is controlled to 1.5 times or more (F2/Fc?1.5) a flow rate Fe (L/min.) of gas formed on a cathode side as calculated from Equation (2) shown below. Fa=(I×S×R×T)/(4×Faraday constant) ??Equation (I) Fe=(I×S×R×T)/(2×Faraday constant) ??Equation (2) I: Electrolytic current (A) S: Time: 60 second (Fixed) R: Gas constant (0.082 1·atm/K/mol) K: Absolute temperature (273.

Abstract: A method for treating a fine structure, includes supplying a liquid to a surface of the fine structure having protrusions on the surface thereof; and thereby treating the surface of the fine structure. The liquid has a smaller surface tension than that of water and is not substantially compatible with water.

Abstract: A method of manufacturing an optical semiconductor element comprises: forming a striped protruding body by selectively dry etching an InGaAlP layer along its thickness, the InGaAlP layer being formed on a substrate; forming a protection film on an upper face and on both side faces of the protruding body; and forming a ridge including the protruding body by etching the InGaAlP layer around the protruding body using a solution containing hydrofluoric acid.

Abstract: A method for manufacturing a microstructure includes treating a surface of the microstructure having a wall body with a liquid, supplying a material activating the surface of the liquid to the surface of the microstructure, and drying the surface of the microstructure.

Abstract: A supported catalyst includes: a catalyst; and a carbon body. The catalyst is supported on the carbon body, and the carbon body is linear.

Abstract: An apparatus for electrolyzing sulfuric acid, the apparatus comprising an electrolytic cell comprising a cathode chamber having a cathode and an anode chamber having an anode, the cathode chamber and the anode chamber being separated by a diaphragm, a sulfuric acid tank configured to store the sulfuric acid, a supply pipe connecting the sulfuric acid tank to an inlet port of the anode chamber, a connection pipe connecting an outlet port of the cathode chamber to the inlet port of the anode chamber, a first supply pump provided on the supply pipe and configured to supply the sulfuric acid from the sulfuric acid tank to the cathode chamber through the supply pipe, and a drain pipe connected to an outlet port of the anode chamber and configured to supply to a solution tank a solution containing an oxidizing agent generated by electrolysis in the anode chamber.

Abstract: A supported catalyst includes: a particulate first carbon material; and a particulate second carbon material supporting a catalyst, having a smaller center particle diameter than the first carbon material, and adsorbed on a surface of the first carbon material.

Abstract: A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.

Abstract: A polyelectrolyte material includes as a main chain: a benzene ring; an ether; and a carbonyl group. A part of the benzene ring is sulfonated. A method for manufacturing a polyelectrolyte material includes: synthesizing disulfonyl difluorobenzophenone; and polymerizing the disulfonyl difluorobenzophenone, 4,4?-difluorobenzophenone, and phenolphthalein with a crown ether as a catalyst. The synthesizing is performed by reacting 4,4?-difluorobenzophenone with fuming sulfuric acid, performing salting-out the reaction product, and recrystallizing the salting-out product.

Abstract: In an ultrasonic washing method of washing a thing to be washed by supplying ultrasonic-wave-applied cleaning fluid to the thing, the ultrasonic wave is applied to the cleaning fluid in such a manner that the ultrasonic wave is turned on and off repeatedly at specific time intervals.

Abstract: A cleaning method includes: producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning a workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece. A method for manufacturing an electronic device includes: producing a workpiece; producing an oxidizing solution by electrolysis of sulfuric acid; and cleaning the workpiece with the oxidizing solution. The oxidizing solution is heated by heat of mixing to clean the workpiece.

Abstract: A cleaning system includes: a sulfuric acid electrolytic portion configured to electrolyze a sulfuric acid solution to generate an oxidizing substance in an anode chamber, a concentrated sulfuric acid supply portion configured to supply a concentrated sulfuric acid solution to the anode chamber, and a cleaning treatment portion configured to carry out cleaning treatment of an object to be cleaned using an oxidizing solution comprising the oxidizing substance. The sulfuric acid electrolytic portion has an anode, a cathode, a diaphragm which is provided between the anode and the cathode, the anode chamber which is demarcated between the anode and the diaphragm and a cathode chamber which is demarcated between the cathode and the diaphragm.

Abstract: A solid electrolyte membrane includes: a porous material layer and an inorganic material layer. The porous material layer has a through-hole that is filled with an electrolyte. The inorganic material layer is provided so as to face to at least either side of a principal surface of the porous material layer and has an opening that is filled with an electrolyte. A solid electrolyte membrane alternatively includes: a first porous layer and a second porous layer. The first porous layer has a through-hole that is filled with an electrolyte. The second porous layer is provided so as to face to at least either side of a principal surface of the first porous layer and has an opening that is filled with an electrolyte. The average diameter of the opening is smaller than the average diameter of the through-hole.

Abstract: A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of ?1 to 3.

Abstract: An etching liquid used for selectively etching silicon nitride, the etching liquid includes: water; a first liquid that can be mixed with the water to produce a mixture liquid having a boiling point of 150° C. or more; and a second liquid capable of producing protons (H+). Alternatively, an etching liquid includes: water; phosphoric acid; and sulfuric acid, the phosphoric acid and the sulfuric acid having a volume ratio of 300:32 to 150:300.

Abstract: A method of manufacturing an electronic device includes dipping a substrate in a solution containing sulfuric acid, which is accommodated in a processing vessel. An aqueous solution of hydrogen peroxide supplies the sulfuric acid accommodated in the processing vessel for generating peroxomonosulfuric acid (Caro's acid). Therefore, an organic material present on the surface of the substrate is removed by the action of Caro's acid within the processing vessel. The time for supplying the aqueous solution of hydrogen peroxide into the processing vessel is set on the basis of the change with time in the concentration of Caro's acid measured in advance so as to permit the peak in the concentration of Caro's acid to appear while the substrate is kept dipped in the processing solution.

Abstract: A processing apparatus includes: a tank configured to store water; vapor generating unit configured to turn the water supplied from the tank into vapor; a processing chamber in which vapor supplied from the vapor generating unit is used to remove residues from a workpiece; cooling unit; and filtering unit. The cooling unit cools waste liquid ejected from the processing chamber. The filtering unit is provided between the cooling unit and the tank, and the filtering unit filters the waste liquid cooled in the cooling unit. A processing method includes: supplying vapor into a processing chamber; removing residues from a workpiece using the vapor; cooling waste liquid containing the removed residues to precipitate the residues as solids; and filtering the waste liquid containing the precipitates.