Abstract: A fuel cell which generates electricity by using a fuel and oxygen, includes: an anode; a cathode; and a plate-like member provided between the anode and the cathode, the plate-like member including: a matrix having a plurality of through holes; and an electrolytic material buried in the through holes. The electrolytic material allows passage of protons and preventing passage of the fuel. The through holes have an aperture ratio distributed in the plate-like member so that the plate-like member has a uniform in-plane temperature when reaction between the anode and the cathode reaches a steady state.

Abstract: A cleaning apparatus to remove organic substances deposited onto a substrate, the apparatus includes a transport unit configured to transport the substrate, a water steam ejection unit configured to eject a heated water steam to a face of the substrate to be transported deposited with the organic substances, and a physical force applying unit configured to apply a physical force to the organic substances deposited onto the substrate to be transported.

Abstract: A processing apparatus includes: a processing chamber configured to contain a workpiece; a first nozzle provided in the processing chamber, the first nozzle discharging vapor onto the workpiece; a wall enclosing the processing chamber; a fluid channel provided inside the wall; a fluid inlet; and a fluid outlet. The fluid inlet is provided in communication with the fluid channel. The fluid outlet is provided in communication with the fluid channel, where a fluid flows into the fluid inlet, passes through the fluid channel, and flows out of the fluid outlet. A processing method for processing a workpiece moving in a processing chamber, the processing method includes: discharging a vapor from a first nozzle toward the workpiece while flowing a fluid through a fluid channel which is provided inside a wall, the wall enclosing the processing chamber.

Abstract: A processing apparatus includes: a processing chamber configured to process a workpiece; a moving unit configured to move the workpiece in the processing chamber; a first nozzle; a partition member; an inlet provided in communication with the downstream space; and an outlet provided in communication with the upstream space. The first nozzle has a discharge port configured to discharge a processing liquid or a processing gas. The discharge port is opposed to a moving path of the workpiece and the processing liquid or the processing gas is discharged from the discharge port in a discharge direction directed to an upstream side of a moving direction of the workpiece relative to a direction perpendicular to the moving direction. The partition member partitions a space above the moving path in the processing chamber, and the space is partitioned at a position of the first nozzle into an upstream space on the upstream side of the moving direction and a downstream space on a downstream side of the moving direction.

Abstract: This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/?m is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon wafer with ozonized water and a process of cleaning said oxidized silicon wafer with hydrofluoric acid. Consequently, it is possible to remove surface adhering pollutant such as particles and metallic foreign matter with the surface structure of silicon wafer flattened up to atomic level by annealing maintained.

Abstract: A method of manufacturing an optical semiconductor element comprises: forming a striped protruding body by selectively dry etching an along its thickness, the InGaAIP layer being formed on a substrate; forming a protection film on an upper face and on both side faces of the protruding body; and forming a ridge including the protruding body by etching the InGaAIP layer around the protruding body using a solution containing hydrofluoric acid.

Abstract: A cleaning apparatus of this invention includes a cleaning water supply portion which supplies alkaline cleaning water, a high-pressure supply portion which supplies high-pressure air, and a two-fluid nozzle which atomizes the supplied cleaning water by mixing with the high-pressure air and sprays to a work piece.

Abstract: A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of ?1 to 3.

Abstract: A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of ?1 to 3.

Abstract: In an ultrasonic washing method of washing a thing to be washed by supplying ultrasonic-wave-applied cleaning fluid to the thing, the ultrasonic wave is applied to the cleaning fluid in such a manner that the ultrasonic wave is turned on and off repeatedly at specific time intervals.

Abstract: This invention provides a cleaning method of silicon wafer for obtaining a silicon wafer in which micro roughness thereof under spatial frequency of 20/&mgr;m is 0.3 to 1.5 nm3 in terms of power spectrum density, by passing a process of oxidizing the silicon wafer with ozonized water and a process of cleaning said oxidized silicon wafer with hydrofluoric acid. Consequently, it is possible to remove surface adhering pollutant such as particles and metallic foreign matter with the surface structure of silicon wafer flattened up to atomic level by annealing maintained.

Abstract: A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of −1 to 3.

Abstract: In an ultrasonic washing method of washing a thing to be washed by supplying ultrasonic-wave-applied cleaning fluid to the thing, the ultrasonic wave is applied to the cleaning fluid in such a manner that the ultrasonic wave is turned on and off repeatedly at specific time intervals.

Abstract: An electrode substrate is brush cleaned with a hydrogen gas dissolved water, which has an oxidation-reduction potential of −860 mV to −400 mV and a pH of 8 to 12, before applying an alignment layer material on the electrode substrate. Thus, it is possible to decrease the manufacturing costs without decreasing the detergency.

Abstract: An electrode substrate is brush cleaned with a hydrogen gas dissolved water, which has an oxidation-reduction potential of −860 mV to −400 mV and a pH of 8 to 12, before applying an alignment layer material on the electrode substrate. Thus, it is possible to decrease the manufacturing costs without decreasing the detergency.

Abstract: An apparatus for producing electrolytic water in which the yielded electrolytic water does not suffer quality deterioration caused by chemical species, e.g., hydrogen ions, moving to the counter-electrode chamber. A diaphragm 4 of a two-chamber type electrolytic cell comprises two or more ion-exchange membranes 3, and a noble-metal layer 2 or another layer may be formed in the diaphragm. Use of the ion-exchange membranes produces an enhanced physical screening effect, while formation of the noble-metal layer produces catalytic effect to decompose chemical species. Both the ion-exchange membranes and the anode-metal layer are effective in diminishing the movement of chemical species to the counter-electrode chamber.

Abstract: A flow rate control valve comprises a driver in which a rotary shaft is rotated to adjust the opening degree of a valve body. The driver is an ultrasonic motor comprising a stator having piezoelectric elements mounted thereto and a rotor mounted to the rotary shaft and resiliently pressed against the stator.

Abstract: An electrode substrate is brush cleaned with a hydrogen gas dissolved water, which has an oxidation-reduction potential of −860 mV to −400 mV and a pH of 8 to 12, before applying an alignment layer material on the electrode substrate. Thus, it is possible to decrease the manufacturing costs without decreasing the detergency.

Abstract: A method of water electrolysis for producing acidic water and alkaline water is disclosed, which is effective in preventing the dissolution of electrode material in the acidic water, etc. attributable to a reverse current flowing in a power supply cutoff state and also in preventing electrode deactivation caused by the electrode material dissolution. This enables the electrolytic cell to be operated stably over a long period of time to yield high-purity acidic and alkaline waters. An electrolytic cell 1 partitioned into an anode chamber and a cathode chamber with a cation-exchange membrane 2 as a solid electrolyte is used to electrolytically produce acidic water and alkaline water. A voltage of 1.2 V or higher and/or a current of 20 mA/dm.sup.2 or higher is applied between the anode 7 and the cathode 8 when the electrolytic cell is in a power supply cutoff state.

Abstract: Provided is a cleaning method for effectively removing particles on the surface of an object to be cleaned. This cleaning method includes dissolving oxygen into deaerated pure water to prepare a cleaning fluid, and cleaning an object to be cleaned by bringing the object into contact with the cleaning fluid to which ultrasonic vibration is being applied.