Abstract: A jig for metal plastic working for use in plastic working of a metal or alloy workpiece, in which a working surface is moved relative to the workpiece in contact with the workpiece. The working surface of the jig is smoothed so that an arithmetic mean surface roughness Ra is not more than 0.12 ?m, and so that no protrusion is observed that has a width of not less than 200 ?m and a height of not less than 10 ?m, which are calculated on a basis of a projection thereof along a working direction.

Abstract: A radio frequency module includes: a module board including a first principal surface and a second principal surface; a first power amplifier; a second power amplifier; a first output transformer connected to the first power amplifier; and a second output transformer connected to the second power amplifier. The first power amplifier and the second power amplifier are disposed on the first principal surface. The first output transformer and the second output transformer are disposed inside the module board or on the second principal surface.

Abstract: A radio frequency module including a module substrate including a first principal surface and a second principal surface; a power amplifier; an inductor disposed on the second principal surface and connected to the power amplifier; and an external connection terminal configured to receive a power supply voltage. The first external connection terminal is disposed on the second principal surface and connected to the power amplifier via the inductor.

Abstract: A radio frequency module includes: a module board; a first semiconductor device containing a first power amplifier and a second power amplifier, the first power amplifier being configured to amplify a radio frequency signal of a first communication band, the second power amplifier being configured to amplify a radio frequency signal of a second communication band, the second communication band being different from the first communication band; and a second semiconductor device containing a control circuit configured to control the first power amplifier and the second power amplifier. In the radio frequency module, the first semiconductor device and the second semiconductor device are stacked together and disposed on the module board.

Abstract: A radio frequency module includes: a module board; a first semiconductor device containing a first power amplifier and a second power amplifier; and a second semiconductor device containing a first switch, the first switch including a first terminal connected to the first power amplifier and a second terminal connected to the second power amplifier. In the radio frequency module, the first semiconductor device and the second semiconductor device are stacked together and disposed on the module board.

Abstract: A radio-frequency module includes a mount board, an electronic component, an external connection terminal, and an acoustic wave filter. The mount board has a first principal surface and a second principal surface facing each other. The electronic component is arranged on the first principal surface of the mount board. The external connection terminal is arranged on the second principal surface of the mount board. The acoustic wave filter is arranged on the second principal surface of the mount board. The acoustic wave filter is a bare-chip acoustic wave filter. The radio-frequency module is suppressed in height along a thickness of the mount board.

Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier includes: an input terminal; an output terminal; first and second amplifying elements disposed parallel to the input terminal; and an output transformer connected between the output terminal and output terminals of the first and second amplifying elements. The PA control circuit is disposed on the second principal surface, and the first and second amplifying elements are both disposed on the first principal surface.

Abstract: A radio frequency module includes: a power amplifier; an inductor connected between the power amplifier and a power-supply terminal to supply a power-supply voltage to the power amplifier; a capacitor connected between a ground and a node that is located between the inductor and the power-supply terminal; a module substrate including a first principal surface and a second principal surface opposite to each other; and a plurality of post electrodes disposed on the second principal surface. Here, the inductor is disposed on the first principal surface or inside of the module substrate, and at least one of the power amplifier or the capacitor is disposed on the second principal surface.

Abstract: A method of attaching/detaching a catalytic unit according to an embodiment is a method of attaching/detaching a catalytic unit accommodated in a reactor housing of a catalytic reactor, including a step of passing the catalytic unit through a gas inlet formed at a top portion of the reactor housing to attach or detach the catalytic unit to or from the reactor housing having a cylindrical shape extending in a vertical direction and configured such that a gas having a gauge pressure of 0.2 Mpa or more is introduced thereto.

Abstract: A radio-frequency module includes a mounting substrate having a first main surface and a second main surface on opposite sides of the mounting substrate; an external connection terminal arranged on the first main surface; and a first transmission power amplifier arranged on the first main surface. The first transmission power amplifier includes an amplifier first main surface closest to the first main surface, an amplifier second main surface that faces away from the amplifier first main surface, a first input-output electrode arranged on the amplifier first main surface and through which a radio-frequency signal input into the first transmission power amplifier or a radio-frequency signal output from the first transmission power amplifier is transmitted, and a first ground electrode arranged on the amplifier second main surface.

Abstract: A catalytic reactor according to an embodiment includes a catalytic unit including at least one catalyst having a honeycomb structure in which a plurality of passages extending in an axial direction are formed, a reactor housing accommodating the catalytic unit, and a seal plate sealing between an outer periphery of the catalytic unit and an inner periphery of the reactor housing. The seal plate seals between the outer periphery of the catalytic unit and the inner periphery of the reactor housing at an upstream end portion of the catalytic unit with respect to a flow of a fluid flowing in the reactor housing.

Abstract: A radio frequency module includes: a first mounting board having a first principal surface and a second principal surface; a second mounting board having a third principal surface facing the second principal surface and a fourth principal surface; a transmission filter having a first mounting surface facing the second principal surface and a first top surface; and a reception filter having a second mounting surface facing the third principal surface and a second top surface; wherein the transmission and reception filters overlap at least partially in a plan view of the first and second mounting boards, an output terminal of the transmission filter is arranged on the first top surface, an input terminal of the reception filter is arranged on the second top surface, and the output and input terminals are connected by a conductive member not routed through the first mounting board or the second mounting board.

Abstract: A first transmitting circuit transmits a first transmission signal of a first frequency band for 2G. A second transmitting circuit transmits a second transmission signal of a second frequency band for 2G. The second frequency band is higher than the first frequency band. A bypass terminal is connected to an output end of the second transmitting circuit. A third transmitting circuit transmits a third transmission signal of a third frequency band for 4G or 5G. A frequency of a harmonic wave of the third transmission signal overlaps the second frequency band. A substrate includes a ground layer. The ground layer is disposed between part of the second transmitting circuit and part of the third transmitting circuit.

Abstract: A substrate includes a conductor unit at constant potential. A first communication unit transmits a first signal in a first frequency band. A second communication unit performs at least one of transmission of a second signal in a second frequency band higher than the first frequency band and at least partially overlapping a harmonic of the first signal, or reception of a third signal in the second frequency band. First and second ends of a conductive wire are connected to the conductor unit. The second communication unit includes at least one of a transmitting filter that passes the second signal, a receiving filter that passes the third signal, or a low-noise amplifier that amplifies the third signal. The conductive wire is located between a first power amplifier of the first communication unit, and at least one of the transmitting filter, receiving filter, or low-noise amplifier of the second communication unit.

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.

Abstract: A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.

Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.

Abstract: A method of producing aluminum cans, including an ironing step using an ironing die (30). The ironing die has a carbon film (50) formed as to cover a working surface thereof. The carbon film exhibits a Raman spectrum such that an intensity ratio represented by ID/IG wherein ID is a maximum peak intensity at 1333±10 cm?1 in the Raman spectrum of the surface of said carbon film, and IG is a maximum peak intensity at 1500±100 cm?1 in the Raman spectrum of the surface of said carbon film, is not less than 1.2. The surface of the carbon film is a smooth surface having an arithmetic mean roughness R of not more than 0.05 ?m. Further, the ironing step includes iron-working an aluminum sheet in a dry process using no lubricant while maintaining an ironing ratio in excess of 40%.

Abstract: A metallic worked article suppressing the worked surfaces from being scratched during the plastic work that is conducted aiming at reducing the thickness or decreasing the diameter. The metallic worked article has a reduced thickness or a decreased diameter as obtained through the plastic work, wherein on the worked surface thereof, the ratio Ra1/Ra2 of an arithmetic mean roughness Ra1 measured in a direction at right angles with the direction of working and an arithmetic mean roughness Ra2 measured in the direction of working, is from 0.5 to 1.5.

Abstract: An image acquisition apparatus includes a spatial light modulator, an optical scanner, a detection unit, a control unit. The spatial light modulator performs focused irradiation on irradiation regions on a surface or inside of an observation object with modulated excitation light. The detection unit has imaging regions in an imaging relation with the irradiation regions on a light receiving surface, each of the imaging regions corresponds to one or two or more pixels, and a pixel that corresponds to none of the imaging regions exists adjacent to each imaging region. The control unit corrects a detection signal of a pixel corresponding to each imaging region on the basis of a detection signal of the pixel that exists adjacent to the imaging region and corresponds to none of the imaging regions, and generates an image of the observation object on the basis of the corrected detection signal.