Abstract: A mobile node includes a processor, a network interface, and a storage device having computer program code for execution by the processor. The computer program code includes a network layer for transmitting and receiving packets and an intermediate driver that transmits packets to the network layer and receives packets from the network layer using a virtual interne protocol (IP) address to identify the mobile node. The intermediate driver transmits packets to the network interface and receives packets from the network interface using a routable actual IP address to identify the mobile node. The intermediate driver permits the actual IP address to change when the mobile node moves from a first subnet to a second subnet without a corresponding change in the virtual IP address. A corresponding NAT associates the virtual IP address with a second actual IP address when the NAT is notified that the mobile node is in the second subnet.

Abstract: A mobile node includes a processor, a network interface, and a storage device having computer program code for execution by the processor. The computer program code includes a network layer for transmitting and receiving packets and an intermediate driver that transmits packets to the network layer and receives packets from the network layer using a virtual internet protocol (IP) address to identify the mobile node. The intermediate driver transmits packets to the network interface and receives packets from the network interface using a routable actual IP address to identify the mobile node. The intermediate driver permits the actual IP address to change when the mobile node moves from a first subnet to a second subnet without a corresponding change in the virtual IP address. A corresponding NAT associates the virtual IP address with a second actual IP address when the NAT is notified that the mobile node is in the second subnet.

Abstract: A method for semiconductor processing is provided, wherein a removal of one or more layers is aided by structurally weakening the one or more layers via ion implantation. A semiconductor substrate is provided having one or more primary layers formed thereon, and a secondary layer is formed over the one or more primary layers. One or more ion species are implanted into the secondary layer, therein structurally weakening the secondary layer, and a patterned photoresist layer is formed over the secondary layer. Respective portions of the secondary layer and the one or more primary layers that are not covered by the patterned photoresist layer are removed, and the patterned photoresist layer is further removed. At least another portion of the secondary layer is removed, wherein the structural weakening of the secondary layer increases a removal rate of the at least another portion of the secondary layer.

Abstract: An embodiment generally relates a method of processing semiconductor devices. The method includes forming a semiconductor device and exposing the semiconductor device to a temperature substantially between 1175 to 1375 degrees Celsius after the formation of a gate dielectric layer. The method also includes annealing the semiconductor device for a period of time.

Abstract: A semiconductor device includes source/drain regions formed in a substrate and having a concentration of nitrogen of at least about 5E18 cm?3. A gate dielectric is located over the substrate and between the source/drain regions. Gate sidewall spacers are located over said source/drain regions. A nitrogen-doped electrode including polysilicon is located over the gate dielectric. The electrode has a concentration of nitrogen therein greater than the concentration of nitrogen in the source/drain regions.

Abstract: A mobile node includes a processor, a network interface, and a storage device having computer program code for execution by the processor. The computer program code includes a network layer for transmitting and receiving packets and an intermediate driver that transmits packets to the network layer and receives packets from the network layer using a virtual internet protocol (IP) address to identify the mobile node. The intermediate driver transmits packets to the network interface and receives packets from the network interface using a routable actual IP address to identify the mobile node. The intermediate driver permits the actual IP address to change when the mobile node moves from a first subnet to a second subnet without a corresponding change in the virtual IP address. A corresponding NAT associates the virtual IP address with a second actual IP address when the NAT is notified that the mobile node is in the second subnet.

Abstract: A method for fabricating a transistor on a semiconductor wafer includes providing a partial transistor containing a gate stack, extension regions, and source/drain sidewalls. The method also includes performing a source/drain implant of the semiconductor wafer, forming a cap layer over the semiconductor wafer, and performing a source/drain anneal. In addition, the method includes performing a damage implant of the cap layer and removing the cap layer over the semiconductor wafer.

Abstract: A mobile node includes a processor, a network interface, and a storage device having computer program code for execution by the processor. The computer program code includes a network layer for transmitting and receiving packets and an intermediate driver that transmits packets to the network layer and receives packets from the network layer using a virtual internet protocol (IP) address to identify the mobile node. The intermediate driver transmits packets to the network interface and receives packets from the network interface using a routable actual IP address to identify the mobile node. The intermediate driver permits the actual IP address to change when the mobile node moves from a first subnet to a second subnet without a corresponding change in the virtual IP address. A corresponding NAT associates the virtual IP address with a second actual IP address when the NAT is notified that the mobile node is in the second subnet.

Abstract: A method for implementing a stacked gate, comprising forming a gate dielectric on a semiconductor body, forming a first layer of gate electrode material on the gate dielectric, forming a second layer of gate electrode material on the first layer of gate electrode material, wherein the grain size distribution of the first layer of gate electrode material is different than the grain size distribution of the second layer of gate electrode material, implanting the first and second gate electrode materials, patterning the first and the second gate electrodes and the gate dielectric, and forming source and drain regions.

Abstract: A method for manufacturing an isolation structure is disclosed that protects the isolation structure during etching of a dichlorosilane (DCS) nitride layer. The method involves the formation of a bis-(t-butylamino)silane-based nitride liner layer within the isolation trench, which exhibits a five-fold greater resistance to nitride etching solutions as compared with DCS nitride, thereby allowing protection against damage from unintended over-etching. The bis-(t-butylamino)silane-based nitride layer also exerts a greater tensile strain on moat regions that results in heightened carrier mobility of active regions, thereby increasing the performance of NMOS transistors embedded therein.

Abstract: A method forms a semiconductor device comprising isolation structures that selectively induce strain into active regions of NMOS and PMOS devices. Form a hard mask layer over a semiconductor body. A resist layer is formed on the hard mask layer that exposes and defines isolation regions. The hard mask layer is patterned and trench regions are formed using the hard mask layer as a mask. An oxide trench liner that induces compressive strain into active regions of the PMOS region is formed within trench regions of the PMOS region. A nitride trench liner that induces tensile strain into active regions of the NMOS region is formed within the NMOS trench regions.

Abstract: A method forms a semiconductor device comprising a modifiable strain inducing layer. A semiconductor body is provided. First and second regions of the semiconductor body are identified. A modifiable tensile strain inducing layer is formed over the device within the first and second regions. A mask is then formed that exposes the second region and covers the first region. A material is selected for a modification implant and the selected material is implanted into the second region thereby converting a portion of the modifiable tensile strain inducing layer into a compressive strain inducing layer within the PMOS region.

Abstract: Compounds having an artemisinin-related endoperoxide moiety covalently coupled to a hydrazone moiety through a linker. Compositions and methods for treating cancer using the compounds.

Abstract: This invention presents an ion exchange media including a plurality of cation exchange zones and anion exchange zones in flow paths that are contained in a substantially nonporous resin transport framework. During electrodeionization and other potential applications the ion exchange media of the invention prevents unfavorable water splitting at resin-membrane interfaces and encourages water splitting at resin—resin interfaces where the water splitting may be constructively used to regenerate the resin.

Abstract: This invention presents an ion exchange media including a plurality of cation exchange zones and anion exchange zones in flow paths that are contained in a substantially nonporous resin transport framework. During electrodeionization and other potential applications the ion exchange media of the invention prevents unfavorable water splitting at resin-membrane interfaces and encourages water splitting at resin-resin interfaces where the water splitting may be constructively used to regenerate the resin.

Abstract: The present invention provides new uses of Gugulipid, an ethyl acetate extract of the resin of the plant Comiphora wighitii, for controlling or preventing cognitive dysfunction, hyperglycemia and some infective conditions of the skin and a method of preparing Gugulipid by agitating the resin in shake flask assembly or sonicating assembly and preparing a solid or a creamy dosage forms.

Abstract: The present invention provides new uses of Gugulipid, an ethyl acetate extract of the resin of the plant Comiphora wighitii, for controlling or preventing cognitive dysfunction, hyperglycemia and some infective conditions of the skin and a method of preparing Gugulipid by agitating the resin in shake flask assembly or sonicating assembly and preparing a solid or a creamy dosage forms.