Abstract: A flexible, scalable multiple frame topology system capable of a wide range of multiple frame geometric topologies. Specifically a series of photographs, a series of photographic letters, or any series of flat, semi-flat, or three-dimensional display objects are displayable in a wide variety of display geometries: a horizontal line of frames, multiple, stacked, horizontal lines of frames, a vertical array of frames, multiple vertical arrays of frames, staggered arrays of frames, diagonal arrays of frames, crossword arrays of frames, and any combinations thereof. Also the disclosed display method is capable of displaying three-dimensional objects on shelves, or glass display cases, shadow boxes, on hooks, interlocking into the display cases—and the geometric display can mix a number of different display frames, for instance, a series of flat framed items with a three dimensional objects at each end of the array.

Abstract: In an arrangement for monitoring of flow within a hydrocarbon well or reservoir by means of one or more tracers which are placed at subterranean locations such that they may be present in flow produced from the well, the analysis of the flow produced from the well is carried out using an electrochemical method, preferably voltammetry, to detect tracer chosen to undergo a detectable electrochemical reaction. The tracer may be provided as nanoparticles in the well fluid.

Abstract: A sugar-based assembly is provided for the removal of a component from a reservoir or process fluid. The sugar-based assembly comprises a sugar optionally bound to a support, and where the support is present, the sugar is bound directly to the support or via a linker group, and the use of the sugar-based assembly in methods of purification of reservoir or process fluids, including subterranean reservoir and process fluids.

Abstract: A method for forming a field effect transistor includes forming a trench in a semiconductor region and forming a dielectric layer lining lower sidewalls and bottom surface of the trench. After forming the dielectric layer, a lower portion of the trench is filled with a shield electrode. An inter-electrode dielectric (IED) is formed in the trench over the shield electrode by carrying out a steam ambient oxidation and carrying out a dry ambient oxidation. A gate electrode is formed in an upper portion of the trench. The gate electrode may be insulated from the shield electrode by the IED.

Abstract: An electrochemical sensor utilises a chemical compound which is not a macromolecule but rather is a single chemical compound of determinate structure, incorporating two redox systems which differ in their response to a species to be detected. In one form, one redox system displays a voltammetric wave which is pH dependent while another displays a voltammetric wave which is pH independent and acts as an internal reference. The sensor comprises a solid substrate, which may be carbonaceous, on which the compound is immobilized. The sensor may be incorporated into a tool to be suspended in a wellbore.

Abstract: When preparing a settable slurry such as a cement slurry for cementing an oil well, cement or other solid powder is mixed with water and a set retarder. In order to be able to run a convenient and rapid check on the concentration of retarder after dilution at the site of use, a tracer material is mixed with the retarder in known amount during manufacture. The tracer is chosen to enable its concentration to be determined analytically after dilution at the site of use, thereby providing a way to determine the concentration of set retarder after such dilution. The tracer may be a redox-active material and its concentration may be determined by voltammetry. Tracer may likewise be mixed with additives other than set retarder.

Abstract: A trench is formed in a semiconductor region. A dielectric layer lining sidewalls and bottom surface of the trench is formed. The dielectric layer is thicker along lower sidewalls and the bottom surface than along upper sidewalls of the trench. After forming the dielectric layer, a lower portion of the trench is filled with a shield electrode. Dielectric spacers are formed along the upper trench sidewalls. After forming the dielectric spacers, an inter-electrode dielectric (IED) is formed in the trench over the shield electrode. After forming the IED, the dielectric spacers are removed.

Abstract: An electro-chemical sensor is described having two molecular redox systems sensitive to the same species and having an detector to detect relative shifts in the voltammograms of the two redox systems.

Abstract: An electrochemical sensor and a method for using an electrochemical sensor are described where the electrochemical sensor comprises a working electrode having thereon one or more redox species that are sensitive to an analyte to be measured and a polymer coating that provides for interaction between the redox species and the analyte.

Abstract: The systems and techniques of the present invention can also synergistically utilize mechanical disruption processes with the use of high hydrostatic pressure extraction, such as pressure cycling extraction techniques to achieve high yield of difficult to extract sample constituents without generating high shear stress or high temperatures.

Abstract: Embodiments of the present invention provide systems and methods for detection and/or measurement of gaseous components of multiphase mixtures containing one or more hydrocarbons that may be retrieved down a wellbore or may be being transported in a pipeline. More specifically, but not by way of limitation, embodiments of the present invention may provide for separation of the gaseous components from the multiphase mixtures and detection and/or measurement of the separated gaseous components by direct oxidation or reduction.

Abstract: Extraction methods that allow a molecular complex (e.g., an organelle) to be extracted from a sample by employing pressure cycling are described.

Abstract: An electro-chemical sensor is described having two molecular redox systems one being sensitive the other insensitive to the species to be detected and both being covalently bound to a polymer and having a detector to detect relative shifts in the voltammograms of the two redox systems.

Abstract: A trench is formed in a semiconductor region. A dielectric layer lining sidewalls and bottom surface of the trench is formed. The dielectric layer is thicker along lower sidewalls and the bottom surface than along upper sidewalls of the trench. After forming the dielectric layer, a lower portion of the trench is filled with a shield electrode. Dielectric spacers are formed along the upper trench sidewalls. After forming the dielectric spacers, an inter-electrode dielectric (IED) is formed in the trench over the shield electrode. After forming the IED, the dielectric spacers are removed.

Abstract: A field effect transistor is formed as follows. A trench is formed in a semiconductor region. A dielectric layer lining the trench sidewalls and bottom is formed. The trench is filled with a conductive material. The conductive material is recessed into the trench to thereby form a shield electrode in a bottom portion of the trench. The recessing of the conductive material includes isotropic etching of the conductive material. An inter-electrode dielectric (IED) is formed over the recessed shield electrode.

Abstract: A trench gate FET is formed as follows. A well region is formed in a silicon region. A plurality of active gate trenches and a termination trench are simultaneously formed in an active region and a termination region of the FET, respectively, such that the well region is divided into a plurality of active body regions and a termination body region. Using a mask, openings are formed over the termination body region and the active body region. Dopants are implanted into the active body regions and the termination body region through the openings thereby forming a first region in each active and termination body region. Exposed surfaces of all first regions are recessed so as to form a bowl-shaped recess having slanted walls and a bottom protruding through the first region such that remaining portions of the first region in each active body region form source regions that are self-aligned to the active gate trenches.

Abstract: A trench-gated field effect transistor (FET) is formed as follows. Using one mask, a plurality of active gate trenches and at least one gate runner trench are defined and simultaneously formed in a silicon region such that (i) the at least one gate runner trench has a width greater than a width of each of the plurality of active gate trenches, and (ii) the plurality of active gate trenches are contiguous with the at least one gate runner trench.

Abstract: An electrode for use in a electrochemical sensor comprises carbon modified with a chemically sensitive redox-active compound, excluding an electrode based on carbon having derivatised thereon two redox-active species wherein at least one of said species is selected from anthraquinone, phenanthrenequinone and N,N?-diphenyl-p-phenylenediamine (DPPD). The invention further provides a pH sensor comprising: a working electrode comprising carbon modified with a chemically sensitive redox active material; and a counter electrode, wherein the ratio of the surface area of the working electrode to the surface area of the counter electrode is from 1:10 to 10:1. Also provided is a pH sensor comprising: a working electrode comprising carbon modified with a chemically sensitive redox active material, and a counter electrode, wherein the area of the working electrode is from 500 ?m2 to 0.1 m2. The uses of these electrodes and sensors are also described.

Abstract: An electro-chemical sensor is described having one or more redox species sensitive to a certain analyte and one or more redox species that are insensitive to that analyte, for the purpose of making measurements in a downhole environment in aquifers or oilfield reservoirs.

Abstract: An electro-chemical sensor is described having two molecular redox systems sensitive to the same species and having an detector to detect relative shifts in the voltammograms of the two redox systems.