Abstract: A memory device includes a group or block of k-level memory cells, where k>2, and where each of the k-level memory cells has k programmable states represented by respective resistance levels.

Abstract: A method for encoding data in a memory array is described. The method includes receiving data to be stored in the memory array. The method also includes encoding the data, to generate a number of encoded data versions. The method also includes selecting, based on a number of optimization heuristics, which of a number of data versions to store in the memory array. The number of data versions include the number of encoded data versions and the data. The method also includes indicating, in metadata associated with the data, the selected data version. The method also includes writing the selected data version, the metadata, or combination thereof, to the memory array.

Abstract: A non-volatile memory device with multiple latency tiers includes at least two crossbar memory arrays, each crossbar memory array comprising a number of memory cells, each memory cell connected to a word line and a bit line at a cross point. The crossbar memory arrays each have a different latency. The crossbar memory arrays are formed on a single die.

Abstract: A method for identifying memory regions that contain remapped memory locations is described. The method includes determining, from a number of tracking bits on a memory module controller, whether a memory region comprises a remapped memory location. The method further includes performing a remapped memory operation on the memory region based on the determination, wherein memory within a computing device is divided into a number of memory regions including the memory region.

Abstract: A method for remapping a memory location in a memory array is described. The method includes receiving, by a memory manager, an identification of a first memory location in a memory array that is to be remapped using a remapping procedure performed by a memory manager. The remapping procedure includes selecting a second memory location to store data intended for the first memory location. The procedure also includes writing, in the first memory location, a pointer to the second memory location.

Abstract: A multi-level cell memory includes a memory cell that stores two or more bits of information; a sensing circuit coupled to the memory cell; and a row buffer structure comprising a split page buffer having a first page buffer and a second page buffer. The sensing circuit operates to read from the memory cell, places a first bit in one of the first page buffer and the second page buffer, and places the second bit in one of the first page buffer and the second page buffer.

Abstract: Example implementations relate to performing active memory operations. In example implementations, a memory controller may be programmed such that the memory controller allocates more time for a standard memory operation than required by a timing specification of a memory communicatively coupled to the memory controller. Extra time that is allocated for the standard memory operation may be identified. An active memory operation may be performed during the extra time.

Abstract: The present disclosure provides a method for processing memory access operations. The method includes determining a fixed response time based at least in part, on a total memory latency of a memory module. The method also includes identifying an available time slot for receiving return data from the memory module over a data bus, wherein the time difference between a current clock cycle and the available time slot is greater than or equal to the fixed response time. The method also includes creating a first slot reservation by reserving the available time slot. The method also includes issuing as read request to the memory module over the data bus, wherein the read request is issued at a clock cycle determined by subtracting the fixed response time from a time of the first slot reservation.

Abstract: A disclosed example apparatus includes a row address register (412) to store a row address corresponding to a row (608) in a memory array (602). The example apparatus also includes a row decoder (604) coupled to the row address register to assert a signal on a wordline (704) of the row after the memory receives a column address. In addition the example apparatus includes a column decoder (606) to selectively activate a portion of the raw based on the column address and the signal asserted on the wordline.

Abstract: An example apparatus includes a row address register to store a row address corresponding to a row in a memory array. The example apparatus also includes a row decoder coupled to the row address register to assert a signal on a wordline of the row after the memory receives a column address. In addition, the example apparatus includes a column decoder to selectively activate a portion of the row based on the column address and the signal asserted on the wordline.

Abstract: A method for operating a memory unit is disclosed. The method includes encoding data from a cache line divided in a plurality of groups and generating a plurality of codewords. The method further includes storing the LED data for the cache line combined with the data of the cache line retrieved from a first portion of the codewords across a plurality of chips in the memory unit to create a first tier of protection. The method also includes storing the GEC data for the cache line retrieved from a second portion of the codewords across the plurality of chips to create a second tier of protection for the cache line. The method also includes receiving information corresponding to the first tier of protection, determining whether an error exists in the data of the cache line, decoding the data of the cache line, and outputting the data of the cache line at the controller.

Abstract: A method that includes evaluating, with a controller, local error detection (LED) information in response to a first memory access operation is disclosed. The LED information is evaluated per cache line segment of data associated with a rank of a memory. The method further includes determining an error in at least one of the cache line segments based on an error detection code and determining whether global error correction (GEC) data for a first cache line associated with the at least one cache line segment is stored in a GEC cache in the controller. The method also includes correcting the first cache line associated with the at least one cache line segment based on the GEC data retrieved from the GEC cache in the controller without accessing GEC data from a memory.

Abstract: Operating a memory unit during a memory access operation. The memory unit includes a configuration of N data chips. A line of data stored in the memory unit is divided, with a controller, into a first portion and a second portion. The first portion of the line of data is encoded, with an outer code encoder, to generate an outer code output. The second portion of the line of data and the outer code output from the outer code encoder are encoded, with an inner code encoder, to generate an inner code output. A first layer of protection for the line of data is generated based on the inner code output and is stored to the memory unit, where the first layer of protection includes local error detection (LED) information combined with the line of data. A second layer of protection for the line of data is generated based on the first layer of protection and is stored to the memory unit. A decoding operation to retrieve the line of data is performing at the controller.

Abstract: A memory region stores a data structure that contains a mapping between a virtual address space and a physical address space of a memory. A portion of the mapping is cached in a cache memory. In response to a miss in the cache memory responsive to a lookup of a virtual address of a request, an indication is sent to the buffer device. In response to the indication, a hardware controller on the buffer device performs a lookup of the data structure in the memory region to find a physical address corresponding to the virtual address.

Abstract: A chip multi-processor (CMP) with virtual domain management. The CMP has a plurality of tiles each including a core and a cache, a mapping storage, a plurality of memory controllers, a communication bus interconnecting the tiles and the memory controllers, and machine-executable instructions. The tiles and memory controllers are responsive to the instructions to group the tiles into a plurality of virtual domains, each virtual domain associated with at least one memory controller, and to store a mapping unique to each virtual domain in the mapping storage.

Abstract: A memory device includes a group or block of k-level memory cells, where k>2, and where each of the k-level memory cells has k programmable states represented by respective resistance levels.

Abstract: According to an example, versioned memory implementation may include comparing a global memory version to a block memory version. The global memory version may correspond to a plurality of memory blocks, and the block memory version may correspond to one of the plurality of memory blocks. A subblock-bit-vector (SBV) corresponding to a plurality of subblocks of the one of the plurality of memory blocks may be evaluated. Based on the comparison and the evaluation, a determination may be made as to which level in a cell of one of the plurality of subblocks of the one of the plurality of memory blocks checkpoint data is stored.

Abstract: A detector detects, using an error code, an error in data stored in a memory. The detector determines whether the error is uncorrectable using the error code. In response to determining that the error is uncorrectable, an error handler associated with an application is invoked to handle the error in the data by recovering the data to an application-wide consistent state.

Abstract: A method for performing memory operations is provided. One or more processors can determine that at least a portion of data stored in a cache memory of the one or more processors is to be stored in the main memory. One or more ranges of addresses of the main memory is determined that correspond to a plurality of cache lines in the cache memory. A set of cache lines corresponding to addresses in the one or more ranges of addresses is identified, so that data stored in the identified set can be stored in the main memory. For each cache line of the identified set having data that has been modified since that cache line was first loaded to the cache memory or since a previous store operation, data stored in that cache line is caused to be stored in the main memory.

Abstract: A system can include an optical multiplexer to combine a plurality of optical input signals having respective wavelengths into a wide-channel optical input signal that is provided to an input channel. The system also includes a photonic packet switch comprising a switch core and a plurality of ports defining a switch radix of the photonic packet switch. The input channel and an output channel can be associated with one of the plurality of ports. The photonic packet switch can process the wide-channel optical input signal and can generate a wide-channel optical output signal that is provided to the output channel. The system further includes an optical demultiplexer to separate the wide-channel optical output signal into a plurality of optical output signals having respective wavelengths. The optical multiplexer and the optical demultiplexer can collectively provide the system with a radix greater than the switch radix.