Abstract: Methods, apparatus and articles of manufacture for controlling nanostore operation based on monitored performance are disclosed. An example method disclosed herein comprises monitoring performance of a nanostore, the nanostore including compute logic and a datastore accessible via the compute logic, and controlling operation of the nanostore in response to detecting a performance indicator associated with wearout of the compute logic to permit the compute logic to continue to access the datastore.

Abstract: The present disclosure provides a method for processing memory access operations. The method includes determining a fixed response time based at least in part, on a total memory latency of a memory module. The method also includes identifying an available time slot for receiving return data from the memory module over a data bus, wherein the time difference between a current clock cycle and the available time slot is greater than or equal to the fixed response time. The method also includes creating a first slot reservation by reserving the available time slot. The method also includes issuing as read request to the memory module over the data bus, wherein the read request is issued at a clock cycle determined by subtracting the fixed response time from a time of the first slot reservation.

Abstract: Systems, methods, and computer-readable and executable instructions are provided for computing system reliability. A method for computing system reliability can include storing, on one of a plurality of devices, a checkpoint of a current state associated with the one of the plurality of devices. The method may further include storing the checkpoint in an erasure-code group across the plurality of devices.

Abstract: A memory device is provided. The memory device comprises an array of memory cells, each including a volume of material that can stably exhibit at least two different physical states that are each associated with a different data value, word lines that each interconnects a row of memory cells within the array of memory cells to a word-line driver, and bit lines that each interconnects a column of memory cells, through a bit-line driver, to a write driver that is controlled, during a WRITE operation, to write an input data value to an activated memory cell at the intersection of the column of memory cells and an activated row of memory cells by generating a current density within the memory cells that corresponds to retention/endurance characteristics of the memory cell dynamically assigned to the memory cell by a memory controller, operating system, or other control functionality.

Abstract: An error test routine is to test for a type of memory error by changing a content of a memory module. A memory handling procedure is to isolate the memory error in response to a positive outcome of the error test routine. The error test routine and memory handling procedure is to be performed at runtime transparent to an operating system. Information corresponding to isolating the memory error is stored.

Abstract: A system and method that includes a memory die, residing on a stacked memory, which is organized into a plurality of mats that include data. The system and method also includes an additional memory die, residing on the stacked memory, that is organized into an additional plurality of mats and connected to the memory die by a Through Silicon Vias (TSVs), the data to be transmitted along the TSVs.

Abstract: Methods, apparatus and articles of manufacture to secure non-volatile memory regions are disclosed. An example method disclosed herein comprises associating a first key pair and a second key pair different than the first key pair with a process, using the first key pair to secure a first region of a non-volatile memory for the process, and using the second key pair to secure a second region of the non-volatile memory for the same process, the second region being different than the first region.

Abstract: A chip multi-processor (CMP) with virtual domain management. The CMP has a plurality of tiles each including a core and a cache, a mapping storage, a plurality of memory controllers, a communication bus interconnecting the tiles and the memory controllers, and machine-executable instructions. The tiles and memory controllers are responsive to the instructions to group the tiles into a plurality of virtual domains, each virtual domain associated with at least one memory controller, and to store a mapping unique to each virtual domain in the mapping storage.

Abstract: Example methods, apparatus, and articles of manufacture to perform error detection and correction are disclosed. A disclosed example method involves enabling a memory controller to operate in one of a tagged memory mode or a non-tagged memory mode. In addition, when the tagged memory mode is enabled in the memory controller, a five-error-correction-six-error-detection per-burst mode is selected to perform error correction on data. When the non-tagged memory mode is enabled in the memory controller, one of a six-error-correction-seven-error-detection per-burst mode or a single-error-correction-dual-error-detection per-transfer mode is selected based on a pattern of error types in the data.

Abstract: Example methods, apparatus, and articles of manufacture to access memory are disclosed. A disclosed example method involves receiving at least one runtime characteristic associated with accesses to contents of a memory page and dynamically adjusting a memory fetch width for accessing the memory page based on the at least one runtime characteristic.

Abstract: A system and method is shown that includes a processor operatively connected to a memory, the processor to include a memory controller to control access to the memory. The system and method also includes a service processor, co-located on a common board and operatively connected to the processor and the memory, the service processor to include an additional memory controller to control access to the memory as part of a checkpoint regime.

Abstract: An exemplary embodiment of the present invention may build data blocks in non-volatile memory. The corresponding parity blocks may be built in a fast, high endurance memory.

Abstract: Methods, apparatus and articles of manufacture for controlling nanostore operation based on monitored performance are disclosed. An example method disclosed herein comprises monitoring performance of a nanostore, the nanostore including compute logic and a datastore accessible via the compute logic, and controlling operation of the nanostore in response to detecting a performance indicator associated with wearout of the compute logic to permit the compute logic to continue to access the datastore.

Abstract: Embodiments herein relate to a method for remapping data. In an embodiment, it is determined if a first memory block is faulty. A pointer is stored to the first memory block and a pointer flag of the first memory block is set when the first memory block is faulty. Data previously stored at the first memory block is written to a second memory block, where the pointer points to a location of the second memory block.

Abstract: A memory device is provided. The memory device comprises an array of memory cells, each including a volume of material that can stably exhibit at least two different physical states that are each associated with a different data value, word lines that each interconnects a row of memory cells within the array of memory cells to a word-line driver, and bit lines that each interconnects a column of memory cells, through a bit-line driver, to a write driver that is controlled, during a WRITE operation, to write an input data value to an activated memory cell at the intersection of the column of memory cells and an activated row of memory cells by generating a current density within the memory cells that corresponds to retention/endurance characteristics of the memory cell dynamically assigned to the memory cell by a memory controller, operating system, or other control functionality.

Abstract: An adaptive, memory system is provided. The adaptive memory system has a number of physical-memory devices and a memory controller that creates and maintains a logical address space to which the physical-memory devices and data-storage allocations are mapped, and through which mapping the memory controller matches static, dynamic, and dynamically-adjustable retention and resiliency characteristics of portions of the physical-memory devices with specified retention and resiliency characteristics specified for the data-storage allocations.

Abstract: A memory component or subsystem is provided. The memory comprises one or more memory devices and one or more write controllers within each of the one or more memory devices that each controls memory-device components to write input data values into a plurality of memory cells within a memory device that represents a unit of stored data addressed by a logical-address-space address, the write controller applying a current to the plurality of memory cells during a WRITE operation with a magnitude that corresponds to a retention value associated with the logical-address-space address.

Abstract: Methods, apparatus and articles of manufacture to secure non-volatile memory regions are disclosed. An example method disclosed herein comprises associating a first key pair and a second key pair different than the first key pair with a process, using the first key pair to secure a first region of a non-volatile memory for the process, and using the second key pair to secure a second region of the non-volatile memory for the same process, the second region being different than the first region.

Abstract: Systems, methods, and computer-readable and executable instructions are provided for computing system reliability. A method for computing system reliability can include storing, on one of a plurality of devices, a checkpoint of a current state associated with the one of the plurality of devices. The method may further include storing the checkpoint in an erasure-code group across the plurality of devices.

Abstract: A disclosed example apparatus includes an interface (702, 726) to receive a request to access a memory (602a) of a memory module (600) and a data store status monitor (730) to determine a status of the memory. The example apparatus also includes a message output subsystem (732) to, when the memory is busy, respond to the request with a negative acknowledgement indicating that the request to access the memory is not grantable.