Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.

Abstract: Apparatuses and methods for processing substrates are disclosed. A processing apparatus includes a chamber for generating a plasma therein, an electrode associated with the chamber, and a signal generator coupled to the electrode. The signal generator applies a DC pulse to the electrode with sufficient amplitude and sufficient duty cycle of an on-time and an off-time to cause events within the chamber. A plasma is generated from a gas in the chamber responsive to the amplitude of the DC pulse. Energetic ions are generated by accelerating ions of the plasma toward a substrate in the chamber in response to the amplitude of the DC pulse during the on-time. Some of the energetic ions are neutralized to energetic neutrals in response to the DC pulse during the off-time. Some of the energetic neutrals impact the substrate with sufficient energy to cause a chemical reaction on the substrate.

Abstract: Devices usable as sensors, as transducers, or as both sensors and transducers include one or more nanotubes or nanowires. In some embodiments, the devices may each include a plurality of sensor/transducer devices carried by a common substrate. The sensor/transducer devices may be individually operable, and may exhibit a plurality of resonant frequencies to enhance the operable frequency bandwidth of the devices. Sensor/transducer devices include one or more elements configured to alter a resonant frequency of a nanotube. Such elements may be selectively and individually actuable. Methods for sensing mechanical displacements and vibrations include monitoring an electrical characteristic of a nanotube. Methods for generating mechanical displacements and vibrations include using an electrical signal to induce mechanical displacements or vibrations in one or more nanotubes.

Abstract: The present disclosure includes field emission device embodiments. The present disclosure also includes method embodiments for forming field emitting devices. One device embodiment includes a housing defining an interior space including a lower portion and an upper portion, a cathode positioned in the lower portion of the housing, a elongate nanostructure coupled to the cathode, an anode positioned in the upper portion of the housing, and a control grid positioned between the elongate nanostructure and the anode to control electron flow between the anode and the elongate nanostructure.

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.

Abstract: Methods may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.

Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.

Abstract: Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.

Abstract: Methods and apparatus may operate to position a sample within a processing chamber and operate on a surface of the sample. Further activities may include creating a layer of reactive material in proximity with the surface, and exciting a portion of the layer of reactive material in proximity with the surface to form chemical radicals. Additional activities may include removing a portion of the material in proximity to the excited portion of the surface to a predetermined level, and continuing the creating, exciting and removing actions until at least one of a plurality of stop criteria occurs.