Patents by Inventor Neal Rueger
Neal Rueger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Devices for positioning carbon nanoparticles, and systems for controlling placement of nanoparticles
Patent number: 8747557Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.Type: GrantFiled: March 5, 2009Date of Patent: June 10, 2014Assignee: Micron Technology, Inc.Inventors: Krupakar Murali Subramanian, Neal Rueger, Gurtej Sandhu -
Publication number: 20120313517Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.Type: ApplicationFiled: August 23, 2012Publication date: December 13, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Neal Rueger, Stephen J. Kramer
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Publication number: 20120001539Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.Type: ApplicationFiled: September 13, 2011Publication date: January 5, 2012Applicant: MICRON TECHNOLOGY, INC.Inventors: Neal Rueger, Stephen J. Kramer
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Publication number: 20100102031Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.Type: ApplicationFiled: December 8, 2009Publication date: April 29, 2010Applicant: MICRON TECHNOLOGY, INC.Inventors: Neal Rueger, Stephen J. Kramer
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Patent number: 7649316Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.Type: GrantFiled: July 13, 2007Date of Patent: January 19, 2010Assignee: Micron Technology, Inc.Inventors: Neal Rueger, Stephen J. Kramer
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Devices for positioning carbon nanoparticles, and systems for controlling placement of nanoparticles
Publication number: 20090308312Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.Type: ApplicationFiled: March 5, 2009Publication date: December 17, 2009Inventors: Krupakar Murali Subramanian, Neal Rueger, Gurtej Sandhu -
Publication number: 20090239389Abstract: Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes identifying a target characteristic for the layer of material, determining a precursor pulse time for introducing a precursor gas into the process chamber during the ALD process to produce the target characteristic in the layer of material, and performing the ALD process that comprises a plurality of steps wherein the precursor gas is introduced into the chamber for the determined precursor pulse time to thereby form the layer of material.Type: ApplicationFiled: June 1, 2009Publication date: September 24, 2009Applicant: Micron Technology, Inc.Inventors: Neal Rueger, John Smythe
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Patent number: 7557047Abstract: Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes identifying a target characteristic for the layer of material, determining a precursor pulse time for introducing a precursor gas into the process chamber during the ALD process to produce the target characteristic in the layer of material, and performing the ALD process that comprises a plurality of steps wherein the precursor gas is introduced into the chamber for the determined precursor pulse time to thereby form the layer of material.Type: GrantFiled: June 9, 2006Date of Patent: July 7, 2009Assignee: Micron Technology, Inc.Inventors: Neal Rueger, John Smythe
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Patent number: 7517558Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.Type: GrantFiled: June 6, 2005Date of Patent: April 14, 2009Assignee: Micron Technology, Inc.Inventors: Krupakar Murali Subramanian, Neal Rueger, Gurtej Sandhu
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Publication number: 20090015160Abstract: Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.Type: ApplicationFiled: July 13, 2007Publication date: January 15, 2009Inventors: Neal Rueger, Stephen J. Kramer
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Publication number: 20070287300Abstract: Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes identifying a target characteristic for the layer of material, determining a precursor pulse time for introducing a precursor gas into the process chamber during the ALD process to produce the target characteristic in the layer of material, and performing the ALD process that comprises a plurality of steps wherein the precursor gas is introduced into the chamber for the determined precursor pulse time to thereby form the layer of material.Type: ApplicationFiled: June 9, 2006Publication date: December 13, 2007Inventors: NEAL RUEGER, John Smythe
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Publication number: 20070138577Abstract: The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer.Type: ApplicationFiled: February 22, 2007Publication date: June 21, 2007Applicant: MICRON TECHNOLOGY, INC.Inventors: Gurtej Sandhu, John Moore, Neal Rueger
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Publication number: 20070134816Abstract: Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.Type: ApplicationFiled: February 9, 2007Publication date: June 14, 2007Applicant: MICRON TECHNOLOGY, INC.Inventor: Neal Rueger
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Publication number: 20070046172Abstract: Methods and systems that include a nanotube used as an emitter in the testing and fabrication of integrated circuits. The nanotube emits a signal to a substrate. Based on the signal or the electrical properties, e.g., current induced in the substrate by the signal, the region of the substrate is characterized. The characterization includes topology of the region of the substrate such as determining whether a recess in the substrate has a proper depth or other dimensions or characteristics of the substrate.Type: ApplicationFiled: August 31, 2005Publication date: March 1, 2007Inventors: Gurtej Sandhu, Neal Rueger
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Publication number: 20070037341Abstract: A method suitable for use during fabrication of a semiconductor device such as a dynamic random access memory or a flash programmable read-only memory comprises etching through silicon nitride and pad oxide layers and into a semiconductor wafer to form a trench into the wafer. A shallow trench isolation (STI) layer is formed in the opening in the silicon nitride and in the trench in the wafer which will, under certain conditions, form with an undesirable void. The silicon nitride and pad oxide layers are removed, then an epitaxial silicon layer is formed on the silicon wafer between the STI. A gate/tunnel oxide layer is formed on the epitaxial silicon layer, then a word line is formed over the gate/tunnel oxide. The epitaxial silicon layer ensures that some minimum distance is maintained between the gate/tunnel oxide and the void in the STI. Wafer processing may then be continued to form a completed semiconductor device.Type: ApplicationFiled: August 10, 2005Publication date: February 15, 2007Inventors: Neal Rueger, Gurtej Sandhu
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Publication number: 20060275549Abstract: The present invention is generally directed to a system for controlling placement of nanoparticles, and methods of using same. In one illustrative embodiment, the device includes a substrate and a plurality of funnels in the substrate, wherein each of the funnels comprises an inlet opening and an elongated, rectangular shaped outlet opening. In one illustrative embodiment, the method includes creating a dusty plasma comprising a plurality of carbon nanotubes, positioning a mask between the dusty plasma and a desired target for the carbon nanotubes, the mask having a plurality of openings extending therethrough, and extinguishing the dusty plasma to thereby allow at least some of the carbon nanotubes in the dusty plasma to pass through at least some of the plurality of openings in the mask and land on the target.Type: ApplicationFiled: June 6, 2005Publication date: December 7, 2006Inventors: Krupakar Subramanian, Neal Rueger, Gurtej Sandhu
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Publication number: 20060273456Abstract: Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.Type: ApplicationFiled: June 2, 2005Publication date: December 7, 2006Inventors: Sanket Sant, Gurtej Sandhu, Neal Rueger
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Publication number: 20060270240Abstract: A method including, prior to a plasma heat-up operation, forming a liner on structure coated with an insulator. And a method including forming a trench on a substrate, forming an insulator on the trench, and after forming a liner having a thickness of between about 50 angstroms and about 400 angstroms on the insulator, applying a plasma heat-up operation to the substrate.Type: ApplicationFiled: July 17, 2006Publication date: November 30, 2006Inventors: Neal Rueger, William Budge, Weimin Li
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Publication number: 20060265868Abstract: An inter-metal dielectric (IMD) fill process includes depositing an insulating nanolaminate barrier layer. The nanolaminate is preferably an oxide liner formed by using an alternating layer deposition process. The layer is highly conformal and is an excellent diffusion barrier. Gaps between metal lines are filled using high density plasma chemical vapor deposition with a reactive species gas. The barrier layer protects the metal lines from shorts between neighboring layers. The resulting structure has substantially uneroded metal lines and an insulating IMD fill.Type: ApplicationFiled: July 14, 2006Publication date: November 30, 2006Inventors: Neal Rueger, Chris Hill, Zailong Bian, John Smythe
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Publication number: 20060264012Abstract: A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method includes exposing at least some of the surface to both of the at least two regions. Exposing the surface to both of the at least two regions may include rotating the plasma and may cyclically expose the surface to the plasma density differences. Exposing to both of the at least two regions may modify a composition and/or structure of the surface. The plasma may include a plasmoid characterized by a steady state plasma wave providing multiple plasma density lobes uniformly distributed about an axis of symmetry and providing plasma between the lobes exhibiting lower plasma densities. Depositing the layer can include ALD and exposure may remove an ALD precursor ligand.Type: ApplicationFiled: July 24, 2006Publication date: November 23, 2006Inventor: Neal Rueger