Abstract: A method and system are presented for monitoring the optical emissions associated a plasma used in integrated circuit fabrication. The optical emissions may be processed by an optical spectrometer to obtain a spectrum. The spectrum may be analyzed to determine the presence of particular disassociated species which are indicative of the presence of a suitable plasma and which may be desired for a deposition, etching, or cleaning process.

Abstract: The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

Abstract: The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer.

Abstract: This invention relates to a method and apparatus for forming a micromachined device, where a workpiece is plasma etched to define a microstructure. The plasma etching is conducted in the presence of a magnetic field, which can be generated and manipulated by an electric field. The magnetic field effects the electrons present in the plasma by directing them to “collect” on a desired plane or surface of the workpiece. The electrons attract the ions of the plasma to etch the desired region of the workpiece to a greater extent than other regions of the workpiece, thereby enabling the formation of more precise “cuts” in the workpiece to form specific shapes of microstructures. The magnetic field can be controlled in direction and intensity and substrate bias power can also be controlled during etching to precisely and accurately etch the workpiece.

Abstract: This invention relates to a method and apparatus for forming a micromachined device, where a workpiece is plasma etched to define a microstructure. The plasma etching is conducted in the presence of a magnetic field, which can be generated and manipulated by an electric field. The magnetic field effects the electrons present in the plasma by directing them to “collect” on a desired plane or surface of the workpiece. The electrons attract the ions of the plasma to etch the desired region of the workpiece to a greater extent than other regions of the workpiece, thereby enabling the formation of more precise “cuts” in the workpiece to form specific shapes of microstructures. The magnetic field can be controlled in direction and intensity and substrate bias power can also be controlled during etching to precisely and accurately etch the workpiece.