Abstract: A plasma processing apparatus and method includes a processing chamber having a substrate support and at least two separate and independently controlled devices selected from the following three devices: a first plasma generator, a second plasma generator, and an electron source. The first plasma generator directs plasma-generated cations toward the substrate support. The second plasma generator directs plasma-generated reactive neutral species toward the substrate support. The electron source directs electrons toward the substrate support. The first chamber may be separated from the substrate by an ion filter and the method may include directing predominately cations, rather than electrons, through the filter to the substrate. Along with the step of generating a remote plasma, the method may also includes directing predominately reactive neutral species, rather than ions and electrons, to the substrate. The apparatus or method may reduce structural charging on the substrate.

Abstract: An inter-metal dielectric (IMD) fill process includes depositing an insulating nanolaminate barrier layer. The nanolaminate is preferably an oxide liner formed by using an alternating layer deposition process. The layer is highly conformal and is an excellent diffusion barrier. Gaps between metal lines are filled using high density plasma chemical vapor deposition with a reactive species gas. The barrier layer protects the metal lines from shorts between neighboring layers. The resulting structure has substantially uneroded metal lines and an insulating IMD fill.

Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received.

Abstract: Disclosed herein are exemplary embodiments of an improved Inductively Coupled Plasma (ICP) chamber which is externally coupleable to a processing chamber to monitor processes gases therefrom. The disclosed ICP chamber design is beneficial because it allows for the porting of reference gases for the purpose of performing actinometry, and/or allows for the introduction of plasma probes into the plasma within the ICP chamber, both of which improve the reliability of process gas concentration determinations. Also disclosed is a processing system for interfacing the ICP chamber to the processing chamber and for controlling both.

Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received.

Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received.

Abstract: Systems and methods are provided for detecting flow in a mass flow controller (MFC). The position of a gate in the MFC is sensed or otherwise determined to monitor flow through the MFC and to immediately or nearly immediately detect a flow failure. In one embodiment of the present invention, a novel MFC is provided. The MFC includes an orifice, a mass flow control gate, an actuator and a gate position sensor. The actuator moves the control gate to control flow through the orifice. The gate position sensor determines the gate position and/or gate movement to monitor flow and immediately or nearly immediately detect a flow failure. According to one embodiment of the present invention, the gate position sensor includes a transmitter for transmitting a signal and a receiver for receiving the signal such that the receiver provides an indication of the position of the gate based on the signal received.

Abstract: A method and system for plasma generation and processing includes a plurality of beam generators each locally controllable and configured for operation upon a single substrate. A control circuit couples to each of the plurality of beam generators with the control circuit configured to independently regulate at least a portion of the plurality of beam generators. A process gas is introduced into an area above a surface of a substrate. A plurality of beam generators is locally controlled and is directed at the process gas. The beam generators independently emit electrons as controlled and at least a portion of the process gas is converted into plasma according to the electrons emitted from the plurality of the independently controllable beam generators. The substrate is processed using the plasma according to local control of each of the plurality of beam generators.

Abstract: Systems and methods for detecting plasmas and/or controlling microfeature workpiece deposition processes are disclosed. A method in accordance with one embodiment includes placing a microfeature workpiece in a plasma chamber, detecting a plasma in the plasma chamber while the microfeature workpiece is in the plasma chamber, and controlling processing of the microfeature workpiece in the plasma chamber based at least in part on the detection of the plasma. A controller in accordance with another embodiment of the invention can be configured to receive an indication of plasma initiation, track an exposure time based on the indication of plasma initiation, and compare the exposure time to a target value. If the exposure time meets or exceeds the target value, the controller can direct the plasma to be extinguished.

Abstract: The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.

Abstract: Systems and methods for depositing materials onto a microfeature workpiece are disclosed herein. In one embodiment, a system includes a first deposition chamber, a gas distributor carried by the first deposition chamber, a second deposition chamber operably coupled to the first deposition chamber, an energy source, and a workpiece support movable between the first and second deposition chambers. The energy source is configured to generate a plasma energy and direct the plasma energy toward a plasma zone in the second deposition chamber. The system may also include a barrier positioned in the second deposition chamber to divide the plasma zone into a first zone and a second zone. The barrier is configured to selectively control the movement of ions from the first zone to the second zone.

Abstract: This invention relates to a method and apparatus for forming a micromachined device, where a workpiece is plasma etched to define a microstructure. The plasma etching is conducted in the presence of a magnetic field, which can be generated and manipulated by an electric field. The magnetic field effects the electrons present in the plasma by directing them to “collect” on a desired plane or surface of the workpiece. The electrons attract the ions of the plasma to etch the desired region of the a workpiece to a greater extent than other regions of the workpiece, thereby enabling the formation of more precise “cuts” in the workpiece to form specific shapes of microstructures. The magnetic field can be controlled in direction and intensity and substrate bias power can also be controlled during etching to precisely and accurately etch the workpiece.

Abstract: A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method includes exposing at least some of the surface to both of the at least two regions. Exposing the surface to both of the at least two regions may include rotating the plasma and may cyclically expose the surface to the plasma density differences. Exposing to both of the at least two regions may modify a composition and/or structure of the surface. The plasma may include a plasmoid characterized by a steady state plasma wave providing multiple plasma density lobes uniformly distributed about an axis of symmetry and providing plasma between the lobes exhibiting lower plasma densities. Depositing the layer can include ALD and exposure may remove an ALD precursor ligand.

Abstract: A plasma processing apparatus and method includes a processing chamber having a substrate support and at least two separate and independently controlled devices selected from the following three devices: a first plasma generator, a second plasma generator, and an electron source. The first plasma generator directs plasma-generated cations toward the substrate support. The second plasma generator directs plasma-generated reactive neutral species toward the substrate support. The electron source directs electrons toward the substrate support. The first chamber may be separated from the substrate by an ion filter and the method may include directing predominately cations, rather than electrons, through the filter to the substrate. Along with the step of generating a remote plasma, the method may also includes directing predominately reactive neutral species, rather than ions and electrons, to the substrate. The apparatus or method may reduce structural charging on the substrate.

Abstract: An inter-metal dielectric (IMD) fill process includes depositing an insulating nanolaminate barrier layer. The nanolaminate is preferably an oxide liner formed by using an alternating layer deposition process. The layer is highly conformal and is an excellent diffusion barrier. Gaps between metal lines are filled using high density plasma chemical vapor deposition with a reactive species gas. The barrier layer protects the metal lines from shorts between neighboring layers. The resulting structure has substantially uneroded metal lines and an insulating IMD fill.

Abstract: A method and system are presented for monitoring the optical emissions associated a plasma used in integrated circuit fabrication. The optical emissions may be processed by an optical spectrometer to obtain a spectrum. The spectrum may be analyzed to determine the presence of particular disassociated species which are indicative of the presence of a suitable plasma and which may be desired for a deposition, etching, or cleaning process.

Abstract: Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.

Abstract: The invention includes a method of forming a semiconductor construction. A semiconductor substrate is placed within a reaction chamber. The substrate comprises a center region and an edge region surrounding the center region. The substrate comprises openings within the center region, and openings within the edge region. While the substrate is within the reaction chamber, a layer of insulative material is formed across the substrate. The layer is thicker over the one of the center region and edge region than over the other of the center region and edge region. The layer is exposed to an etch which removes the insulative material faster from over the one or the center region and edge region than from over the other of the center region and edge region.

Abstract: Disclosed herein are exemplary embodiments of an improved Inductively Coupled Plasma (ICP) chamber which is externally coupleable to a processing chamber to monitor processes gases therefrom. The disclosed ICP chamber design is beneficial because it allows for the porting of reference gases for the purpose of performing actinometry, and/or allows for the introduction of plasma probes into the plasma within the ICP chamber, both of which improve the reliability of process gas concentration determinations. Also disclosed is a processing system for interfacing the ICP chamber to the processing chamber and for controlling both.

Abstract: The invention includes a method of filling gaps in a semiconductor substrate. A substrate and a gas mixture containing at least one heavy-hydrogen compound are provided within a reaction chamber. The gas mixture is reacted to form a layer of material over the substrate by simultaneous deposition and etch of the layer. The layer of material fills the gap such that the material within the gap is essentially void-free. The invention includes a method of providing improved deposition rate uniformity. A material is deposited over a surface in the presence of at least one gas selected from the group consisting of D2, HD, DT, T2 and TH. The net deposition rate during the deposition has a degree of variance across the surface which is measurably improved relative to a corresponding degree of variance that occurs during deposition utilizing H2 under otherwise substantially identical conditions.