Abstract: In some implementations, the device may include initiating a stream producer that sends formatted data to a topic. In addition, the device may include ingesting, by a sink connector, the formatted data into an object storage service. The device may include implementing an event-driven serverless compute, where the event-driven serverless compute is triggered automatically when any new data is ingested to the object storage service, and where the event-driven serverless compute reads the JSON data, converts it to transformed data, and writes the transformed data to a distributed data store. Moreover, the device may include creating an ETL job, where the ETL job reads the data, further transforms the data, and writes it back into the distributed data store as ETL transformed data. Also, the device may include sending the ETL transformed data to an LLM API in batches to create inference results, where the batches are queued to manage the rate limits.

Abstract: In some implementations, the method may include providing one or more collectors which periodically request memory utilization from a device. In addition, the method may include receiving, by a stream processor, memory utilization from the one or more collectors. The method may include monitoring, by the stream processor, if an average memory utilization evaluated over a predetermined time crosses a predetermined threshold (for example 5 minutes). Moreover, the method may include sending data downstream to a data sink for persistence. Also, the method may include sending a new sampling strategy to the one or more collectors, if the average memory utilization evaluated over the predetermined time crosses the predetermined threshold.

Abstract: In some implementations, the method may include receiving, by one or more agent applications, a query from a user. In addition, the method may include providing a dataframe to the one or more agent applications. The method may include appending a predetermined number of initial entries from the dataframe to a suffix of the query. Moreover, the method may include constructing a standardized prompt template, where the query is embedded within the standardized prompt template. Also, the method may include Channeling the prompt template to one or more Large Language Models (LLMs). Further, the method may include Utilizing a GPT API to generate a generated code snippet. In addition, the method may include Executing the generated code snippet to create a resulting output. The method may include Relaying the resulting output back to the user.

Abstract: A method of fabricating a system includes fabricating a plurality of transistors and coupling a forming a bridge structure connected between a gate contact of a first transistor with a drain contact of a second transistor. The method further includes fabricating a multi-level memory structure including capacitors that comprise a ferroelectric material or a paraelectric material. The capacitors within a given level are coupled together by a plate electrode. The method further includes forming a signal electrode coupled with the plate electrode.

Abstract: A method of fabricating a device comprises forming a multi-layer stack above a first substrate, where multi-layer stack includes a non-linear polar material. In at least one embodiment, method further includes forming a first conductive layer on multi-layer stack and annealing multi-layer stack. A transistor is formed above a second substrate. In at least one embodiment, method also includes forming a second conductive layer above electrode structure and bonding first conductive layer with second conductive layer. After bonding, method includes removing at least a portion of first substrate patterning multi-layer stack to form a memory device.

Abstract: Non lead-based perovskite ferroelectric devices for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Abstract: A device structure comprises a first conductive interconnect, an electrode structure on the first conductive interconnect, an etch stop layer laterally surrounding the electrode structure; a plurality of memory devices above the electrode structure, where individual ones of the plurality of memory devices comprise a dielectric layer comprising a perovskite material. The device structure further comprises a plate electrode coupled between the plurality of memory devices and the electrode structure, where the plate electrode is in direct contact with a respective lower most conductive layer of the individual ones of the plurality of memory devices. The device structure further includes an insulative hydrogen barrier layer on at least a sidewall of the individual ones of the plurality of memory devices; and a plurality of via electrodes, wherein individual ones of the plurality of via electrodes are on a respective one of the individual ones of the plurality of memory devices.

Abstract: The disclosed technology generally relates to semiconductor structures and their fabrication, and more particularly to diffusion barrier structures containing Ti, Si, N and methods of forming same. A method of forming an electrically conductive diffusion barrier comprises providing a substrate in a reaction chamber and forming a titanium silicide (TiSi) region on the substrate by alternatingly exposing the substrate to a titanium-containing precursor and a first silicon-containing precursor. The method additionally comprises forming a titanium silicon nitride (TiSiN) region on the TiSi region by alternatingly exposing the substrate to a titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor. The method can optionally include, prior to forming the TiSi region, forming a titanium nitride (TiN) region by alternatingly exposing the substrate to a titanium-containing precursor and a nitrogen-containing precursor.

Abstract: A process integration and patterning flow used to pattern a memory array area for an embedded memory without perturbing a fabricating process for logic circuitries. The fabrication process uses a pocket mask (e.g., a hard mask) to decouple the etching process of a memory array area and non-memory area. Such decoupling allows for a simpler fabrication process with little to no impact on the current fabrication process. The fabrication process may use multiple pocket masks to decouple the etching process of the memory array area and the non-memory area. This fabrication process (using multiple pocket masks) allows to avoid exposure of memory material into a second pocket etch chamber. The process of etching memory material is decoupled from the process of etching an encapsulation material. Examples of embedded memory include dynamic random-access memory and ferroelectric random-access memory.

Abstract: Systems and methods for planting specified seed products in target growing spaces. An example method includes receiving a request for a planting recommendation related to seeding of a target growing space and, in response, determining, using one or more seed placement prediction models, a prediction output including a predicted yield for multiple seed products at the target growing space at each of one or more different weather conditions. The method also includes determining, using an optimization model, a seed planting recommendation output, based on at least the prediction output and at least one grower constraint parameter associated with the target growing space, where the seed planting recommendation output includes at least one of the multiple seed products, and then directing planting of the at least one of the multiple seed products at the target growing space based on the seed planting recommendation output.

Abstract: The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Abstract: A method for monetizing ferroelectric process development is described. In at least one embodiment, the method comprises procuring a target material based on a model driven selection which is based on charge, mass and magnetic moment, and/or mass of the atomic constituents of the target material. The method further comprises applying the target material to a fabrication process to build a ferroelectric device. The method further comprises generating a notification indicative of procurement of the target material and application of the target material. The method further comprises electronically transmitting the notification to a customer, wherein the notification includes an invoice having a line item associated with a cost of the procuring of the target material and application of the target material.

Abstract: A pocket integration for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Abstract: A method to deposit a multi-layer stack for device applications includes implementing a model driven target selection for deposition. One or more targets may be procured with an initial stoichiometric composition or elemental purity. The targets may be utilized to form the multi-layer stack, and measurements may be made of chemical composition and electrical properties of the multi-layer stack. The measurements may be compared to reference target values and if measurement results are not within tolerance, the composition of the targets can be changed to yield a successive multi-layer stack. The process can be iterated until measurement results are within tolerance of target results. Additional experimentation with post deposition thermal anneal can be performed to optimize multi-layer stack properties.

Abstract: An integration process including an etch stop layer for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Abstract: An integration process including an etch stop layer for high density memory and logic applications and methods of fabrication are described. While various examples are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For instance, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Abstract: A memory device includes a first electrode comprising a first conductive nonlinear polar material, where the first conductive nonlinear polar material comprises a first average grain length. The memory device further includes a dielectric layer comprising a perovskite material on the first electrode, where the perovskite material includes a second average grain length. A second electrode comprising a second conductive nonlinear polar material is on the dielectric layer, where the second conductive nonlinear polar material includes a third grain average length that is less than or equal to the first average grain length or the second average grain length.

Abstract: A pocket integration for high density memory and logic applications and methods of fabrication are described. While various embodiments are described with reference to FeRAM, capacitive structures formed herein can be used for any application where a capacitor is desired. For example, the capacitive structure can be used for fabricating ferroelectric based or paraelectric based majority gate, minority gate, and/or threshold gate.

Abstract: A method of fabricating a device comprises forming a multi-layer stack above a first substrate, where multi-layer stack includes a non-linear polar material. In at least one embodiment, method further includes forming a first conductive layer on multi-layer stack and annealing multi-layer stack. A transistor is formed above a second substrate. In at least one embodiment, method also includes forming a second conductive layer above electrode structure and bonding first conductive layer with second conductive layer. After bonding, method includes removing at least a portion of first substrate patterning multi-layer stack to form a memory device.

Abstract: A method of fabricating a device comprises forming a multi-layer stack above a first substrate, where multi-layer stack includes a non-linear polar material. In at least one embodiment, method further includes forming a first conductive layer on multi-layer stack and annealing multi-layer stack. A transistor is formed above a second substrate. In at least one embodiment, method also includes forming a second conductive layer above electrode structure and bonding first conductive layer with second conductive layer. After bonding, method includes removing at least a portion of first substrate patterning multi-layer stack to form a memory device.