Abstract: In one example in accordance with the present disclosure, a fluid ejection device is described. The fluid ejection device includes a number of nozzles to eject fluid. Each nozzle includes a firing chamber to hold fluid, a nozzle orifice through which to dispense fluid, and an ejector disposed in the firing chamber to eject fluid through the nozzle orifice. The fluid ejection device also includes a particle detector to detect the presence of foreign particles within the fluid in the firing chamber.

Abstract: The present disclosure relates to an electronic device and communication method. The electronic device comprising a RF link unit radiating a data stream in form of electromagnetic wave radiation onto a phase shifter; a processing circuitry configured to determine an analog precoding matrix; phase shifters, each of which for performing analog precoding on the received signal of the electromagnetic wave radiation according to the determined analog precoding matrix, and an antenna array, each of antenna elements of which transmits the analog precoded signal, wherein the number of the phase shifters is the same as the number of the antenna elements of the antenna array, and the phase shifters and the antenna elements are in one-to-one correspondence.

Abstract: Technologies relating to a crossbar array circuit with a one-transistor-two-memristor (1T2R) Resistive Random-Access Memory (RRAM) and a common reactive electrode in the applications of the crossbar array circuit are disclosed. An example crossbar array circuit includes: a two-memristor structure, wherein the two-memristor structure includes: a first bottom electrode; a first RRAM stack formed on the first bottom electrode; a top electrode formed on the first RRAM stack; a second RRAM stack formed on the top electrode; and a second bottom electrode formed on the second RRAM stack, wherein the top electrode is a reactive or scavenging electrode which is configured to provide the first RRAM stack and the second RRAM stack with oxygen vacancies near the reactive electrode; and a one-transistor structure, wherein the one-transistor structure includes: a source electrode; a gate electrode; and a drain electrode, wherein the source electrode is connected to the top electrode.

Abstract: Systems and methods for improving the accuracy of computing in a crossbar-based computing environment are disclosed. In some implementations, an apparatus comprises: a first column of crossbar devices; a second column of crossbar devices; a plurality of analog to digital converters (ADCs) configured to receive an input signal from the first column of crossbar devices and the second column of crossbar devices; a selector configured to switch the input signal between the first column of crossbar devices and the second column of crossbar devices; and a CPU configured to calculate a first conductance of the first column of crossbar devices and a second conductance of the second column of crossbar devices, wherein the selector is configured to switch the signals between the first column of crossbar devices and the second column of crossbar devices in accordance with the first conductances and the second conductances.

Abstract: Technologies relating to one-selector-one-memristor (1S1R) crossbar array circuits methods for reducing 1S1R cell-to-cell switch variations are disclosed. An example apparatus includes: a bottom electrode; a filament forming layer formed on the bottom electrode; an oxidized filament forming layer; a channel forming layer formed on the filament forming layer; an oxidized filament forming layer; a top electrode formed on the channel forming layer, wherein the filament forming layer is configured to form a filament within the filament forming layer, the channel forming layer is configured to form a channel within the channel forming layer when applying a switching voltage upon the filament forming layer and the channel forming layer, and wherein the filament forming layer is surrounded by the oxidized filament forming layer and the channel forming layer is surrounded by the oxidized channel forming layer.

Abstract: Technologies relating to RRAM-based crossbar array circuits with increase temperature stability are disclosed. An example apparatus includes: a bottom electrode; a filament forming layer formed on the bottom electrode; and a top electrode formed on the filament forming layer, wherein the filament forming layer is configured to form a filament within the filament forming layer when applying a switching voltage upon the filament forming layer, and wherein a material of the filament includes nitrogen-doped Ta2O5, Ta2N/Ta2O5, or TaNyOz.

Abstract: One example of a device includes a sensor, a memristor code comparator, and a controller. The sensor is to provide a sensor signal. The memristor code comparator is to compare the sensor signal to a reference signal. The controller is to determine a status of the sensor signal based on the comparison.

Abstract: In an example implementation, a substance detection method includes sensing for fluid in a chamber of a substance detection device. When fluid is sensed in the chamber, the method includes sensing again for fluid in the chamber. When no fluid is sensed in the chamber, the method includes initiating a substance detection process.

Abstract: An enhanced reality system, in an example, includes an input device, the input device including a first arm and a second arm configured to be held together by a user; a sensor to sense, at least, a relative position of at least a portion of the first and second arms; wherein sensing, at least, the relative position of the first and second arms comprises a haptic retargeting process that simulates a touching of ends of the first and second arms to the outer surface of a virtual object presented in the enhanced reality environment.

Abstract: Technologies relating to RRAM-based crossbar array circuits and more specifically to reducing row switch resistance error of in crossbar array circuits are disclosed. An example apparatus includes: a first Op-amp including a first inverting Op-amp input, a first non-inverting Op-amp input, and a first Op-amp output; a row switch device including a row switch input and a row switch output; a crossbar array including a row wire, a column wire, and a cross-point device connected between the row wire and the column wire. The row switch input is connected to the first Op-amp output; the row switch output is connected to the first inverting Op-amp input; and the row switch output is connected to the row wire.

Abstract: Systems and methods for mitigating defects in a crossbar-based computing environment are disclosed. In some implementations, an apparatus comprises: a plurality of row wires; a plurality of column wires connecting between the plurality of row wires; a plurality of non-linear devices formed in each of a plurality of column wires configured to receive an input signal, wherein at least one of the non-linear device has a characteristic of activation function and at least one of the non-linear device has a characteristic of neuronal function.

Abstract: An electronic device includes a marker with a pattern of marks encoding product information of the electronic device. The pattern includes first marks having a first material with a first isotopic ratio of an element, and second marks having a second material with a second isotopic ratio of the element different than the first isotopic ratio.

Abstract: An activatable SEL sensor stage may include a substrate, cation metal-based material masses supported by the substrate and isolated from one another and dielectric capping layer over the cation metal-based material masses to inhibit oxidation of the cation metal-based material masses.

Abstract: A gas conduit directs a flow of gas from a gas flow source. A surface enhanced luminescence (SEL) stage is within the conduit and includes a substrate and nano fingers projecting from the substrate. A heater heats the nano fingers to a temperature so as to soften the nano fingers such that the nano fingers collapse towards each other to capture molecules entrained in the gas therebetween.

Abstract: Provided in one example is an analyte detection package that includes a chamber, a surface-enhanced luminescence analyte stage within the chamber, and a lens integrated as part of the package to focus radiation onto the analyte stage.

Abstract: In some examples, a hybrid memory device includes multiple memory cells, where a given memory cell of the multiple memory cells includes a volatile memory element having a plurality of layers including electrically conductive layers and a dielectric layer between the electrically conductive layers, and a non-volatile resistive memory element to store different data states represented by respective different resistances of the non-volatile resistive memory element, the non-volatile resistive memory element having a plurality of layers including electrically conductive layers and a resistive switching layer between the electrically conductive layers of the non-volatile resistive memory element.

Abstract: Examples disclosed herein relate to a layered RFID tag. In one implementation, a layered passive chipless RFID tag includes a first conductive layer, a second dielectric layer, and a third conductive layer. The first, second, and third layers may be in a stacked configuration with the second layer between the first layer and the second layer.

Abstract: Implementing phase change material-based selectors in a crossbar array are disclosed. In some implementations, an apparatus comprises: a plurality of row wires; a plurality of column wires; and a plurality of cross-point devices connecting the plurality of row wires and the plurality of column wires. Each cross-point devices comprises: a memristor device and a selector device formed on the memristor device. The selector device is configured to when in an OFF state, selectively transmit a programming signal to the memristor device; and switch the memristor device to a predefined resistance state when the programming signal includes a voltage pulse higher than a predefined threshold voltage of the selector device and shorter than a crystallization time of the selector device. The selector device is further configured to, when selectively transmitting the programming signal to the memristor device, temporarily switch itself from the OFF state into an ON state.

Abstract: According to an example, an apparatus may include a memory that may store instructions to cause a processor to generate, for each part to be fabricated in a build envelope of a 3D fabricating device, first level descriptions and second level descriptions for the part. The processor may determine, using the first level descriptions, whether there is an arrangement that results in the parts jointly fitting within the build envelope while providing certain thermal decoupling spaces between the parts. In response to a determination that the arrangement using the first level descriptions for the parts has not been determined, the processor may determine, using the second level descriptions, whether there is an arrangement that results in the parts jointly fitting within the build envelope while providing the certain thermal decoupling spaces.

Abstract: Technologies for reducing series resistance are disclosed. An example method may comprise: forming a first layer on a temporary substrate; forming a second layer on the first layer; etching the first layer and the second layer to form a trench; electroplating a top electrode via the trench, wherein the top electrode partially formed on a top surface of the second layer; removing the first layer and the second layer; forming a curable layer on the temporary substrate and the top electrode; removing the temporary substrate from the curable layer and the top electrode; forming a cross-point device on the curable layer and the top electrode; forming a bottom electrode on the cross-point device; and forming a flexible substrate on the bottom electrode.