Abstract: A bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes and a diode triggered clamp device in some embodiment. In other embodiments, a bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes with a clamp device merged with a steering diode in each set. The TVS circuit is constructed to realize low capacitance at the protected nodes and improved clamping voltage for robust protection against surge evens. In some embodiments, the TVS circuit realizes low capacitance at the protected nodes by fully or almost completely depleting the P-N junction connected to the protected nodes in the operating voltage range. In this manner, the TVS circuit does not present undesirable parasitic capacitance to the data pins being protected, especially when the data pins are applied in high speed applications.

Abstract: A computer-implemented method includes receiving a data stream and dividing the data stream into one or more data artefacts for one or more time intervals. The computer-implemented method further includes generating one or more contexts. Each of the one or more contexts are for at least one of the one or more time intervals. The computer-implemented method further includes storing each of the one or more data artefacts in shared storage. The shared storage is accessible for each of the one or more contexts. The computer-implemented method further includes, for each context of the one or more contexts: determining a dependency for the context; monitoring the context for a completion of said dependency; and responsive to the completion, releasing the dependency. The computer-implemented further includes removing those of the one or more data artefacts that do not belong to the dependency for any of the one or more contexts.

Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a trailing shield, a main pole, a MAMR stack disposed between the trailing shield and the main pole, side shields surrounding at least a portion of the main pole, and a structure disposed between the side shields and the main pole at a media facing surface (WS). The structure is fabricated from a material that is thermally conductive and electrically insulating/dissipative. The material has a thermal conductivity of at least 50 W/(m*K) and an electrical resistivity of at least 105 ?*m. The structure helps dissipate joule heating generated from either the main pole or the MAMR stack into surrounding area without electrical shunting, leading to reduced heating or break-down induced failures.

Abstract: A computer-implemented method includes receiving a data stream and dividing the data stream into one or more data artefacts for one or more time intervals. The computer-implemented method further includes generating one or more contexts. Each of the one or more contexts are for at least one of the one or more time intervals. The computer-implemented method further includes storing each of the one or more data artefacts in shared storage. The shared storage is accessible for each of the one or more contexts. The computer-implemented method further includes, for each context of the one or more contexts: determining a dependency for the context; monitoring the context for a completion of said dependency; and responsive to the completion, releasing the dependency. The computer-implemented further includes removing those of the one or more data artefacts that do not belong to the dependency for any of the one or more contexts.

Abstract: A bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes and a diode triggered clamp device in some embodiment. In other embodiments, a bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes with a clamp device merged with a steering diode in each set. The TVS circuit is constructed to realize low capacitance at the protected nodes and improved clamping voltage for robust protection against surge evens. In some embodiments, the TVS circuit realizes low capacitance at the protected nodes by fully or almost completely depleting the P-N junction connected to the protected nodes in the operating voltage range. In this manner, the TVS circuit does not present undesirable parasitic capacitance to the data pins being protected, especially when the data pins are applied in high speed applications.

Abstract: Disclosed are a beamforming information interaction method and a network device. The method comprises: a first network device receiving first beamforming information sent by a second network device, wherein the first network device is a network device corresponding to a serving cell where a terminal is currently located, the second network device is a network device adjacent to the first network device, and the first beamforming information is information related to beam measurement of the second network device; and the first network device configuring the terminal according to the first beamforming information.

Abstract: The present application provides a method and a system for determining a saturation exponent of a heterogeneous carbonate reservoir. The method comprises: dividing a target reservoir into at least two reservoir types in accordance with a predetermined rule; obtaining a correspondence relationship between a saturation exponent and a bound water saturation in each of the reservoir types; determining the reservoir type to which a to-be-measured core belongs in accordance with the predetermined rule; obtaining a bound water saturation of the to-be-measured core; and calculating the saturation exponent of the to-be-measured core according to the bound water saturation of the to-be-measured core on the basis of the correspondence relationship of the reservoir type to which the to-be-measured core belongs.

Abstract: Aspects of the present disclosure provide techniques for interleaving in single user (SU) preamble puncturing in wireless local area networks (WLANs). In one implementation, a wireless device can identify an SU preamble puncture transmission, encode information for the SU preamble puncture transmission to produce encoded bits, parse the encoded bits into multiple segments, parse the encoded bits among multiple resource units (RUs) within each of the multiple segments, and perform a tone interleaving of the encoded bits within each of the multiple RUs. These techniques can be used in a 6 GHz band, as well as a 2.4 GHz band or a 5 GHz band.

Abstract: A transient voltage suppressor (TVS) is constructed as an NPN bipolar transistor including individually optimized collector-base and emitter-base junctions both with avalanche mode breakdown. The TVS device is constructed using a base that includes a lightly doped base region bordered by a pair of more heavily doped base regions. The two more heavily doped base regions are used to form the collector-base junction and the emitter-base junction both as avalanche breakdown junctions. The lightly doped base region between the collector-base and emitter-base doping regions ensures low leakage current in the TVS device. In this manner, the TVS bipolar transistor of the present invention provides high surge protection with robust clamping while ensuring low leakage current.

Abstract: A transient voltage suppressor (TVS) is constructed as an NPN bipolar transistor including individually optimized collector-base and emitter-base junctions both with avalanche mode breakdown. The TVS device is constructed using a base that includes a lightly doped base region bordered by a pair of more heavily doped base regions. The two more heavily doped base regions are used to form the collector-base junction and the emitter-base junction both as avalanche breakdown junctions. The lightly doped base region between the collector-base and emitter-base doping regions ensures low leakage current in the TVS device. In this manner, the TVS bipolar transistor of the present invention provides high surge protection with robust clamping while ensuring low leakage current.

Abstract: A bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes and a diode triggered clamp device in some embodiment. In other embodiments, a bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes with a clamp device merged with a steering diode in each set. The TVS circuit is constructed to realize low capacitance at the protected nodes and improved clamping voltage for robust protection against surge evens. In some embodiments, the TVS circuit realizes low capacitance at the protected nodes by fully or almost completely depleting the P-N junction connected to the protected nodes in the operating voltage range. In this manner, the TVS circuit does not present undesirable parasitic capacitance to the data pins being protected, especially when the data pins are applied in high speed applications.

Abstract: A transient voltage suppressor (TVS) is constructed as an NPN bipolar transistor including individually optimized collector-base and emitter-base junctions both with avalanche mode breakdown. The TVS device is constructed using a base that includes a lightly doped base region bordered by a pair of more heavily doped base regions. The two more heavily doped base regions are used to form the collector-base junction and the emitter-base junction both as avalanche breakdown junctions. The lightly doped base region between the collector-base and emitter-base doping regions ensures low leakage current in the TVS device. In this manner, the TVS bipolar transistor of the present invention provides high surge protection with robust clamping while ensuring low leakage current.

Abstract: Database replication is performed by tracking sequence numbers associated with binary change logs. At a producer cluster, a binary change log is generated based on a write transaction made to a database partition in the producer cluster. Included with the binary change log is a sequence number corresponding to the write transaction. The binary change log is transmitted from the producer cluster to a consumer cluster, where a determination is made whether to apply the binary change log based on the included sequence number. The binary change log is then applied to a database partition in the consumer cluster. The sequence number is stored at the consumer cluster by combining the sequence number with a numerical range having a first number and a second number, where the second number has a value corresponding to the most recent binary change log applied to the database partition in the consumer cluster.

Abstract: A bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes and a diode triggered clamp device in some embodiment. In other embodiments, a bidirectional transient voltage suppressor (TVS) circuit for data pins of electronic devices includes two sets of steering diodes with a clamp device merged with a steering diode in each set. The TVS circuit is constructed to realize low capacitance at the protected nodes and improved clamping voltage for robust protection against surge evens. In some embodiments, the TVS circuit realizes low capacitance at the protected nodes by fully or almost completely depleting the P-N junction connected to the protected nodes in the operating voltage range. In this manner, the TVS circuit does not present undesirable parasitic capacitance to the data pins being protected, especially when the data pins are applied in high speed applications.

Abstract: An apparatus comprises a slider having a trailing edge and a leading edge. A laser diode unit comprises a submount and a laser diode mounted to the submount. The submount includes a mounting surface affixed to a first surface of the slider at the trailing edge such that a first surface of the submount faces toward the leading edge of the slider. A thermally conductive material covers the first surface of the submount and at least a portion of the first surface of the slider. The thermally conductive material serves as a thermal conduction pathway between the submount and the slider.

Abstract: Database replication is performed by tracking sequence numbers associated with binary change logs. At a producer cluster, a binary change log is generated based on a write transaction made to a database partition in the producer cluster. Included with the binary change log is a sequence number corresponding to the write transaction. The binary change log is transmitted from the producer cluster to a consumer cluster, where a determination is made whether to apply the binary change log based on the included sequence number. The binary change log is then applied to a database partition in the consumer cluster. The sequence number is stored at the consumer cluster by combining the sequence number with a numerical range having a first number and a second number, where the second number has a value corresponding to the most recent binary change log applied to the database partition in the consumer cluster.

Abstract: A low capacitance transient voltage suppressor with snapback control and a reduced voltage punch-through breakdown mode includes an n+ type substrate, a first epitaxial layer on the substrate, a buried layer formed within the first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and an implant layer formed within the first epitaxial layer below the buried layer. The implant layer extends beyond the buried layer. A set of source regions is formed within a top surface of the second epitaxial layer. Implant regions are formed in the second epitaxial layer, with a first implant region located below the first source region.

Abstract: Ionized physical vapor deposition (IPVD) is used to form a magnetic recording disk drive write head main pole with thin side gap layers and a thicker leading gap layer. A metal or metal alloy is formed by IPVD in a trench with a bottom and outwardly sloping sidewalls. An optional Ru seed layer is deposited on the metal or metal alloy. This is followed by atomic layer deposition (ALD) of a Ru smoothing layer. If the IPVD results in metal or metal alloy side gap layers with a rough surface, the ALD process is modified, resulting in a smooth Ru smoothing layer that does not replicate the rough surface of the side gap layers.

Abstract: An apparatus comprises a slider having a trailing edge and a leading edge. A laser diode unit comprises a submount and a laser diode mounted to the submount. The submount includes a mounting surface affixed to a first surface of the slider at the trailing edge such that a first surface of the submount faces toward the leading edge of the slider. A thermally conductive material covers the first surface of the submount and at least a portion of the first surface of the slider. The thermally conductive material serves as a thermal conduction pathway between the submount and the slider.

Abstract: A low capacitance transient voltage suppressor with snapback control and a reduced voltage punch-through breakdown mode includes an n+ type substrate, a first epitaxial layer on the substrate, a buried layer formed within the first epitaxial layer, a second epitaxial layer on the first epitaxial layer, and an implant layer formed within the first epitaxial layer below the buried layer. The implant layer extends beyond the buried layer. A set of source regions is formed within a top surface of the second epitaxial layer. Implant regions are formed in the second epitaxial layer, with a first implant region located below the first source region.