Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method includes forming a write pole, and then depositing a refill layer. A mask structure can be formed over the writ pole and refill layer, the mask structure being configured to define a stitched pole. An ion milling or reactive ion milling can then be performed to remove portions of the refill layer that are not protected by the mask structure. Then a magnetic material can be deposited to form a stitched write pole that defines a secondary flare point. The stitched pole can also be self aligned with an electrical lapping guide in order to accurately locate the front edge of the secondary flare point relative to the air bearing surface of the write head.

Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method includes forming a write pole, and then depositing a refill layer. A mask structure can be formed over the writ pole and refill layer, the mask structure being configured to define a stitched pole. An ion milling or reactive ion milling can then be performed to remove portions of the refill layer that are not protected by the mask structure. Then a magnetic material can be deposited to form a stitched write pole that defines a secondary flare point. The stitched pole can also be self aligned with an electrical lapping guide in order to accurately locate the front edge of the secondary flare point relative to the air bearing surface of the write head.

Abstract: A method for manufacturing a magnetoresistive sensor that results in the sensor having a very flat top magnetic shield. The process involves depositing a plurality of sensor layers and then depositing a thin high density carbon CMP stop layer over the sensor layers and forming a mask over the CMP stop layer. An ion milling is performed to define the sensor. Then a thin insulating layer and magnetic hard bias layer are deposited. A chemical mechanical polishing is performed to remove the mask and a reactive ion etching is performed to remove the remaining carbon CMP stop layer. Because the CMP stop layer is very dense and hard, it can be made very thin. This means that when it is removed by reactive ion etching, there is very little notching over the sensor, thereby allowing the upper shield (deposited there-over) to be very thin.

Abstract: Embodiments described include a non-polymeric voltage switchable dielectric (VSD) material comprising substantially of a grain structure formed from only a single compound, processes for making same, and applications for using such non-polymeric VSD materials.

Abstract: This invention discloses the method for preparing desmosdumotin C, the series of desmosdumotin C derivatives and their manufactures, and the total synthesis of desmosdumotin B. The invention also discloses uses of the derivatives and pharmaceutical compositions containing the same in preparation of medicines for treatment of tumor or AIDS.

Abstract: The method and apparatus of the embodiments of the present invention employ an in-situ particle decontamination technique that allows for such decontamination while a wafer is a vacuum tool or deposition chamber, thereby eliminating the need for another device for performing decontamination. This in-situ decontamination is effective for particle contamination resulting, for example, from tool resident mechanical component. Furthermore, particle decontamination is performed in the presence of plasma, having a potential for helping to maximize a “self bias” voltage, under RF conditions, and is integrated into the vacuum process.

Abstract: A binder for VSD composition is selected to have enhanced electron mobility in presence of high electric fields.

Abstract: A composition of VSD material comprises a binder, and one or more types of particles that include a concentration of doped semiconductor particles.

Abstract: A composition of voltage switchable dielectric (VSD) material that comprises a concentration of core shell particles that individually comprise an insulative core and one or more shell layers.

Abstract: A substrate device includes a layer of non-linear resistive transient protective material and a plurality of conductive elements that form part of a conductive layer. The conductive elements include a pair of electrodes that are spaced by a gap, but which electrically interconnect when the transient protective material is conductive. The substrate includes features to linearize a transient electrical path that is formed across the gap.

Abstract: A composition is provided that includes a polymer binder, and one or more classes of particle constituents. At least one class of particle constituents includes semiconductive particles that individually have a band gap that is no greater than 2 eV. As VSD material, the composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage that exceeds the characteristic voltage level.

Abstract: This invention discloses the method for preparing desmosdumotin C, the series of desmosdumotin C derivatives and their manufactures, and the total synthesis of desmosdumotin B. The invention also discloses uses of the derivatives and pharmaceutical compositions containing the same in preparation of medicines for treatment of tumor or AIDS.

Abstract: A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method includes forming a write pole, and then depositing a refill layer. A mask structure can be formed over the writ pole and refill layer, the mask structure being configured to define a stitched pole. An ion milling or reactive ion milling can then be performed to remove portions of the refill layer that are not protected by the mask structure. Then a magnetic material can be deposited to form a stitched write pole that defines a secondary flare point. The stitched pole can also be self aligned with an electrical lapping guide in order to accurately locate the front edge of the secondary flare point relative to the air bearing surface of the write head.

Abstract: Embodiments of the present invention pertain to forming a head with reduced pole tip recession. According to one embodiment, a pole tip element is formed from a platinum containing material. During diamond like carbon (DLC) processing, hydrogen and hydrogen containing compounds are removed from a vacuum plasma processing environment that contains the head so that an amount of material that is removed from the pole tip element and other non-platinum containing elements associated with the head are approximately the same.

Abstract: The method and apparatus of the embodiments of the present invention employ an in-situ particle decontamination technique that allows for such decontamination while a wafer is a vacuum tool or deposition chamber, thereby eliminating the need for another device for performing decontamination. This in-situ decontamination is effective for particle contamination resulting, for example, from tool resident mechanical component. Furthermore, particle decontamination is performed in the presence of plasma, having a potential for helping to maximize a “self bias” voltage, under RF conditions, and is integrated into the vacuum process.

Abstract: A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes.

Abstract: An improved method of fabricating thin-film magnetic recording heads is disclosed. For the method, one or more layers for a feature (such as a read element, a write element, etc) are deposited and patterned. A layer of adhesion material is then deposited on the layers of the feature. The adhesion material provides better adhesion to a Diamond-Like Carbon (DLC) layer and to the underlying feature surface, such as monolithic Silicon (Si) or Titanium (Ti). A layer of DLC material is then deposited on the layer of adhesion material. The steps of depositing the layer of adhesion material and the layer of DLC material are repeated more than one time. Thus, more than one set of alternating layers of adhesion material and DLC material are deposited on the layers of the feature to form a multi-layer protective coating on the feature.

Abstract: A method for applying a protective layer to an electronic device such as the ABS of a slider, magnetic head, etc. for reducing paramagnetic deadlayer thickness includes selecting an etching angle for minimizing formation of a paramagnetic deadlayer at an interface of an electronic device and an adhesive layer subsequently formed on the electronic device, etching a surface of an electronic device at the selected angle, the selected angle being less than about 75 degrees from an imaginary line extending perpendicular to the surface, forming an adhesive layer on the etched surface of the electronic device, and forming a protective layer on the adhesive layer. A magnetic head formed by the process is also disclosed.

Abstract: A magnetic recording head with reduced thermally induced protrusion. In one embodiment, a thermal expansion constraining layer comprising silicon dioxide for instance overlays a magnetic recording head. The thermal expansion constraining layer has a very low coefficient of thermal expansion. A sealant layer comprising aluminum oxide overlays the thermal expansion constraining layer. The thermal expansion constraining layer prevents deleterious deformation of underlying head structures that can degrade performance of a storage system. The sealant layer protects the thermal expansion constraining layer from propagation of surface defects therein by protection from shock, including shock during fabrication, as well as moisture, increasing manufacturing yield and reliability.

Abstract: A method of physical vapor deposition (PVD) is disclosed in which xenon is used as the operating gas in the vacuum chamber in the deposition of an adhesion layer, preferably silicon, which allows the adhesion layer to be ultra-thin with improved durability over prior art films. The use of argon as is typical in the prior art results in argon atoms being incorporated into the ultra-thin silicon film with deleterious results. In films that are only several angstroms thick, the contamination of the film with argon or other elements can yield a film with reduced adhesion performance and in some cases noble atoms such as argon can escape the film leaving voids or pinholes. The use of the larger and heavier xenon atoms in the vacuum chamber produces a substantially purer film with reduced risk of voids and pinholes.