Abstract: A method for identifying cell coupling in a memory system includes generating a two-dimensional pseudorandom binary sequence array. The method also includes performing an erase operation on a plurality of cells of a memory block of the memory system. The method also includes performing a write operation on the plurality of cells using the two-dimensional pseudorandom binary sequence array. The method also includes performing a read operation on the plurality of cells to identify a voltage value for each cell of the plurality of cells. The method also includes identifying cell coupling between respective cells of the plurality of cells using the voltage value for each of the cells of the plurality of cells.

Abstract: The disclosure relates in some aspects to multi-dimensional quasi-cyclic (QC) low-density parity-check (LDPC) code generation. In one example, a controller of a data storage apparatus determines a plurality of dimensions for a code, the plurality of dimensions comprising a plurality of coprime numbers, generates distinct circulant rotation values based on at least a root of unity number and a prime number, assigns a different one of the distinct circulant rotation values to each of a plurality of circulant locations defined within the plurality of dimensions to generate the code, and encodes data using the code.

Abstract: A method for identifying cell coupling in a memory system includes generating a two-dimensional pseudorandom binary sequence array. The method also includes performing an erase operation on a plurality of cells of a memory block of the memory system. The method also includes performing a write operation on the plurality of cells using the two-dimensional pseudorandom binary sequence array. The method also includes performing a read operation on the plurality of cells to identify a voltage value for each cell of the plurality of cells. The method also includes identifying cell coupling between respective cells of the plurality of cells using the voltage value for each of the cells of the plurality of cells.

Abstract: Systems and methods for read level tracking and optimization are described. Pages from a wordline of a flash memory device read and the raw page data read from the wordline may be buffered in a first set of buffers. The raw page data for each of the pages may be provided to a decoder for decoding and the decoded page data for each of the pages buffered in a second set of buffers. First bin identifiers may be identified for memory cells of the wordline based on the raw page data and second bin identifiers may be identified for the memory cells of the wordline based on the decoded page data. Cell-level statistics may be accumulated based on the first bin identifiers and the second bin identifiers, and a gradient may be determined for respective read levels based on decoding results for each of the pages and the cell-level statistics. Settings for the read levels may be configured in the flash memory device based on the determined gradients.

Abstract: Disclosed are systems and methods for providing programming of multi-level memory cells using an optimized multiphase mapping with a balanced Gray code. A method includes programming, in a first phase, a first portion of data into memory cells in a first-level cell mode. The method may also include reading, from the memory cells, the programmed first portion of the data. The method may also include programming, in a second phase, a second portion of the data into the memory cells in a second-level cell mode, wherein programming the second phase is based on applying, to the read first portion of the data, a mapping from the first-level cell mode to the second-level cell mode. The mapping may be selected based on minimizing an average voltage change of the memory cells from the first to second phase while maintaining a balanced Gray code.

Abstract: Storage device programming methods, systems and devices are described. A method may generate a mapping of data based on a set of data, the mapping of data including a first mapped data and a second mapped data. The method may include performing a first programming operation to write, in a first mode, the first mapped data to the memory device. The method may include storing the second mapped data to a cache. The method may include generating a second set of data, based on an inverse mapping of the mapping of data including the second mapped data from the cache and the first mapped data from the memory device, for writing, in a second mode, to the memory device, wherein the second set of data includes the set of data, and the first mode and the second mode correspond to different modes of writing to the memory device.

Abstract: Systems and methods for read level tracking and optimization are described. Pages from a wordline of a flash memory device read and the raw page data read from the wordline may be buffered in a first set of buffers. The raw page data for each of the pages may be provided to a decoder for decoding and the decoded page data for each of the pages buffered in a second set of buffers. First bin identifiers may be identified for memory cells of the wordline based on the raw page data and second bin identifiers may be identified for the memory cells of the wordline based on the decoded page data. Cell-level statistics may be accumulated based on the first bin identifiers and the second bin identifiers, and a gradient may be determined for respective read levels based on decoding results for each of the pages and the cell-level statistics. Settings for the read levels may be configured in the flash memory device based on the determined gradients.

Abstract: A data storage device is disclosed comprising a head actuated over a disk comprising servo data for defining a plurality of data tracks, including consecutive data tracks N?1, N, and N+1. Data is written to data track N using a position error signal (PES) generated by reading the servo data, and a read track trajectory for data track N is generated based on the PES of the write. Data is read from data track N based on the read track trajectory for data track N.

Abstract: A data storage device is disclosed comprising a head actuated over a disk comprising a plurality of data tracks, including consecutive data tracks N?1 and N. A first write to data track N is performed using a first position error signal (PES) representing a position of the head relative to the data tracks. A track squeeze metric is generated for data track N?1 based on at least the first PES of the first write. The track squeeze metric for data track N?1 is accumulated during the first write, and the first write is aborted when the accumulated track squeeze metric for data track N?1 exceeds a first threshold.

Abstract: Disclosed are systems and methods for providing programming of multi-level memory cells using an optimized multiphase mapping with a balanced Gray code. A method includes programming, in a first phase, a first portion of data into memory cells in a first-level cell mode. The method may also include reading, from the memory cells, the programmed first portion of the data. The method may also include programming, in a second phase, a second portion of the data into the memory cells in a second-level cell mode, wherein programming the second phase is based on applying, to the read first portion of the data, a mapping from the first-level cell mode to the second-level cell mode. The mapping may be selected based on minimizing an average voltage change of the memory cells from the first to second phase while maintaining a balanced Gray code.

Abstract: Storage device programming methods, systems and devices are described. A method may generate a mapping of data based on a set of data, the mapping of data including a first mapped data and a second mapped data. The method may include performing a first programming operation to write, in a first mode, the first mapped data to the memory device. The method may include storing the second mapped data to a cache. The method may include generating a second set of data, based on an inverse mapping of the mapping of data including the second mapped data from the cache and the first mapped data from the memory device, for writing, in a second mode, to the memory device, wherein the second set of data includes the set of data, and the first mode and the second mode correspond to different modes of writing to the memory device.

Abstract: A data storage device is disclosed comprising a head actuated over a disk. A first plurality of codewords and corresponding parity sector are generated, and a second plurality of codewords and corresponding parity sector are generated. The first and second plurality of codewords are written to the disk, and during a read of the first and second set of codewords, M codeword locations within the data track that are unrecoverable are saved, and N codeword locations out of the M codeword locations are selected based on a quality metric of the read. The N codewords are reread from the data track at the N codeword locations and reliability metrics associated with the N codewords are saved. The saved reliability metrics are updated using at least one of the first parity sector or the second parity sector.

Abstract: Disclosed are systems and methods for providing programming of multi-level memory cells using an optimized multiphase mapping with a balanced Gray code. A method includes programming, in a first phase, a first portion of data into memory cells in a first-level cell mode. The method may also include reading, from the memory cells, the programmed first portion of the data. The method may also include programming, in a second phase, a second portion of the data into the memory cells in a second-level cell mode, wherein programming the second phase is based on applying, to the read first portion of the data, a mapping from the first-level cell mode to the second-level cell mode. The mapping may be selected based on minimizing an average voltage change of the memory cells from the first to second phase while maintaining a balanced Gray code.

Abstract: Storage device programming methods, systems and devices are described. A method may generate a mapping of data based on a set of data, the mapping of data including a first mapped data and a second mapped data. The method may include performing a first programming operation to write, in a first mode, the first mapped data to the memory device. The method may include storing the second mapped data to a cache. The method may include generating a second set of data, based on an inverse mapping of the mapping of data including the second mapped data from the cache and the first mapped data from the memory device, for writing, in a second mode, to the memory device, wherein the second set of data includes the set of data, and the first mode and the second mode correspond to different modes of writing to the memory device.

Abstract: A data storage system and method are provided for storing data in non-volatile memory devices. Binary data is received for storage in a non-volatile memory device. The binary data is converted into non-binary data comprising base-X values, where X is an integer greater than two. The non-binary data is encoded to generate a codeword and the codeword is written to a wordline of the non-volatile memory device.

Abstract: The disclosure relates in some aspects to multi-dimensional quasi-cyclic (QC) low-density parity-check (LDPC) code generation. In one example, a controller of a data storage apparatus determines a plurality of dimensions for a code, the plurality of dimensions comprising a plurality of coprime numbers, generates distinct circulant rotation values based on at least a root of unity number and a prime number, assigns a different one of the distinct circulant rotation values to each of a plurality of circulant locations defined within the plurality of dimensions to generate the code, and encodes data using the code.

Abstract: A data storage device is disclosed wherein a first plurality of codewords are generated each comprising a plurality of symbols, and a first parity sector is generated over the first plurality of codewords. A second plurality of codewords are generated each comprising a plurality of symbols, and a second parity sector is generated over the second plurality of codewords. A third parity sector is generated over a first subset of the first plurality of codewords and a first subset of the second plurality of codewords, and a fourth parity sector is generated over a second subset of the first plurality of codewords and a second subset of the second plurality of codewords. When processing of a first codeword fails, the first codeword and the first parity sector are processed using a LDPC type decoder, and the first codeword and the third parity sector are processed using the LDPC type decoder.

Abstract: A data storage device is disclosed comprising a non-volatile storage medium (NVSM), wherein a plurality of codewords and corresponding parity sector are written to the NVSM and then read from the NVSM. Each codeword read from the NVSM is processed using a Viterbi-type detector, thereby generating codeword reliability metrics. The codeword reliability metrics for at least some of the codewords are processed using a low density parity check (LDPC) type decoder, thereby generating a LDPC reliability metric for each symbol of at least one codeword. The LDPC reliability metrics for at least one of an un-converged codeword are processed using the parity sector, thereby updating the un-converged codeword reliability metrics. Processing the codeword reliability metrics with the LDPC decoder and updating the reliability metrics with the parity sector is repeated at least once before updating the LDPC reliability metrics of at least the un-converged codeword using the Viterbi-type detector.

Abstract: A data storage device is disclosed comprising a head actuated over a disk comprising a data track having at least a first data segment and a second data segment. A first plurality of codewords are generated, and a first parity sector is generated over the first plurality of codewords. The first plurality of codewords and the first parity sector are written to the first data segment. A second plurality of codewords are generated, and a second parity sector is generated over the second plurality of codewords. The second plurality of codewords and the second parity sector are written to the second data segment. During a read operation the data segments of the data track are processed sequentially to decode the codewords using a low density parity check (LDPC) decoder, wherein the reliability metrics of un-converged codewords are stored in a codeword buffer and updated using the respective parity sector.

Abstract: A data storage system and method are provided for storing data in non-volatile memory devices. Binary data is received for storage in a non-volatile memory device. The binary data is converted into non-binary data comprising base-X values, where X is an integer greater than two. The non-binary data is encoded to generate a codeword and the codeword is written to a wordline of the non-volatile memory device.