Abstract: Methods of fabricating multi-tiered semiconductor devices are described, along with apparatus and systems that include them. In one such method, a first dielectric is formed, and a second dielectric is formed in contact with the first dielectric. A channel is formed through the first dielectric and the second dielectric with a first etch chemistry, a void is formed in the first dielectric with a second etch chemistry, and a device is formed at least partially in the void in the first dielectric. Additional embodiments are also described.

Abstract: Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver-containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.

Abstract: Disclosed aspects relate to database object management for a shared pool of configurable computing resources. A set of database object profile data is collected. The set of database object profile data is for a set of database objects. Based on the set of database object profile data, a set of database object priority values is determined. The set of database object priority values is for the set of database objects. Based on the set of database object priority values, a management action is performed. The management action is performed with respect to the set of database objects.

Abstract: A computer-implemented method includes receiving, from a natural language interface system, a natural language task specification, and converting the natural language task specification into a domain independent data flow graph. The data flow graph includes substeps. The method further includes: presenting the data flow graph via the natural language interface system as a natural language program; interactively refining the natural language program; and correspondingly modifying the data flow graph. The computer-implemented method further includes, for each substep: selecting one or more candidate APIs from an API library, based on the substep; interactively narrowing the one or more candidate APIs to at least one selected API; implementing the substep by specifying one or more calls to the at least one selected API to yield a substep implementation; and appending the substep implementation to a result program. A corresponding computer program product and computer system are also disclosed.

Abstract: As disclosed herein a computer-implemented method for managing an HA cluster includes activating, by a cluster manager, a monitoring process that monitors a database on a first node in a high-availability database cluster. The method further includes receiving an indication that the database on the first node is not healthy, initiating a failover operation for deactivating the database on the first node and activating a standby database on a second node in the high-availability database cluster providing an activated standby database, and ensuring that any additional databases on the first node are unaffected by the failover operation. A computer program product corresponding to the above method is also disclosed.

Abstract: As disclosed herein a computer-implemented method for managing an HA cluster includes activating, by a cluster manager, a monitoring process that monitors a database on a first node in a high-availability database cluster. The method further includes receiving an indication that the database on the first node is not healthy, initiating a failover operation for deactivating the database on the first node and activating a standby database on a second node in the high-availability database cluster providing an activated standby database, and ensuring that any additional databases on the first node are unaffected by the failover operation. A computer program product corresponding to the above method is also disclosed.

Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

Abstract: Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.

Abstract: Semiconductor devices comprise at least one integrated circuit layer, at least one conductive trace and an insulative material adjacent at least a portion of the at least one conductive trace. At least one interconnect structure extends through a portion of the at least one conductive trace and a portion of the insulative material, the at least one interconnect structure comprising a transverse cross-sectional dimension through the at least one conductive trace which differs from a transverse cross-sectional dimension through the insulative material.

Abstract: An extract, transform and load (ETL) data storage system performs extract, transform and load operations to load target tables with data extracted and transformed data from multiple data sources. Transformations include matching and linking date temporarily stored in intermediate tables by entity across data sources. Data may be organized by entity and time, and analytical records can be generated from the intermediate tables according to variable transforms. The analytical records may be used for predictive analytics.

Abstract: Methods of forming conductive elements, such as interconnects and electrodes, for semiconductor structures and memory cells. The methods include forming a first conductive material and a second conductive material comprising silver in a portion of at least one opening and performing a polishing process to fill the at least one opening with at least one of the first and second conductive materials. An annealing process may be performed to form a mixture or an alloy of the silver and the first conductive material. The methods enable formation of silver containing conductive elements having reduced dimensions (e.g., less than about 20 nm). The resulting conductive elements have a desirable resistivity. The methods may be used, for example, to form interconnects for electrically connecting active devices and to form electrodes for memory cells. A semiconductor structure and a memory cell including such a conductive structure are also disclosed.

Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

Abstract: Some embodiments include methods of forming charge-trapping zones. The methods may include forming nanoparticles, transferring the nanoparticles to a liquid to form a dispersion, forming an aerosol from the dispersion, and then directing the aerosol onto a substrate to form charge-trapping centers comprising the nanoparticles. The charge-trapping zones may be incorporated into flash memory cells.

Abstract: Embodiments of the present invention provide methods, systems, and computer program products for prioritizing database failover. In one embodiment, an order in which to failover databases is determined based on a priority order of databases and the time at which the failover process occurs, which can be used to help reduce possible down time users can experience while waiting for the database most important to them to be failed over.

Abstract: Embodiments of the present invention provide methods, systems, and computer program products for prioritizing database failover. In one embodiment, an order in which to failover databases is determined based on a priority order of databases and the time at which the failover process occurs, which can be used to help reduce possible down time users can experience while waiting for the database most important to them to be failed over.

Abstract: A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.

Abstract: Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.

Abstract: A method for forming conductive vias in a substrate of a semiconductor device component includes forming one or more holes, or apertures or cavities, in the substrate so as to extend only partially through the substrate. A barrier layer, such as an insulative layer, may be formed on surfaces of each hole. Surfaces within each hole may be coated with a seed layer, which facilitates adhesion of conductive material within each hole. Conductive material is introduced into each hole. Introduction of the conductive material may be effected by deposition or plating. Alternatively, conductive material in the form of solder may be introduced into each hole.

Abstract: Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.

Abstract: Some embodiments include methods of forming charge-trapping zones. The methods may include forming nanoparticles, transferring the nanoparticles to a liquid to form a dispersion, forming an aerosol from the dispersion, and then directing the aerosol onto a substrate to form charge-trapping centers comprising the nanoparticles. The charge-trapping zones may be incorporated into flash memory cells.