Abstract: An electrode for a lithium secondary battery including a sheet-like current collector and an active material layer carried on the current collector. The active material layer is capable of absorbing and desorbing lithium, and the active material layer includes a plurality of columnar particles having at least one bend. An angle ?1 formed by a growth direction of the columnar particles from a bottom to a first bend of the columnar particles, and a direction normal to the current collector is preferably 10° or more and less than 90°. When ?n+1 is an angle formed by a growth direction of the columnar particles from an n-th bend counted from a bottom of the columnar particles to an (n+1)-th bend, and the direction normal to the current collector, and n is an integer of 1 or more, ?n+1 is preferably 0° or more and less than 90°.

Abstract: A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

Abstract: A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.

Abstract: A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode.

Abstract: A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

Abstract: A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm.

Abstract: An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer.

Abstract: An electrode for a lithium secondary battery including a sheet-like current collector and an active material layer carried on the current collector. The active material layer is capable of absorbing and desorbing lithium, and the active material layer includes a plurality of columnar particles having at least one bend. An angle ?1 formed by a growth direction of the columnar particles from a bottom to a first bend of the columnar particles, and a direction normal to the current collector is preferably 10° or more and less than 90°. When ?n+1 is an angle formed by a growth direction of the columnar particles from an n-th bend counted from a bottom of the columnar particles to an (n+1)-th bend, and the direction normal to the current collector, and n is an integer of 1 or more, ?n+1 is preferably 0° or more and less than 90°.

Abstract: In order to enhance charge and discharge efficiency and to improve cycle characteristics by increasing a facing area between a positive electrode active material and a negative electrode active material, in a negative electrode for lithium secondary battery having a current collector and an active material layer carried on the current collector, the active material layer includes a plurality of columnar particles. The columnar particles include an element of silicon, and are tilted toward the normal direction of the current collector. Angle ? formed between the columnar particles and the normal direction of the current collector is preferably 10°??<90°.

Abstract: In order to enhance charge and discharge efficiency and to improve cycle characteristics by increasing a facing area between a positive electrode active material and a negative electrode active material, in a negative electrode for lithium secondary battery having a current collector and an active material layer carried on the current collector, the active material layer includes a plurality of columnar particles. The columnar particles include an element of silicon, and are tilted toward the normal direction of the current collector. Angle ? formed between the columnar particles and the normal direction of the current collector is preferably 10°??<90°.

Abstract: A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure.

Abstract: A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate.

Abstract: A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate.

Abstract: The present invention aims to ensure luminosity while improving evacuation characteristics in a plasma display panel. First ribs (112) that separate a plurality of cells from each other and second ribs (113) are formed in stripe patterns so as to intersect with each other on a surface of a first substrate (107), a surface of a second substrate opposes tops of the first ribs, and a height of the ribs at intersections (112b) of the first and second ribs intersect is lower than other parts of the first ribs (112a).

Abstract: Set-up, write, sustain and erase pulses are variously applied to a plasma display panel using a staircase waveform in which the rising or falling portion is in at least two steps. These staircase waveforms can be realized by adding at least two pulses. Use of such waveforms for the set-up, write and erase pulses improves contrast, and use for the sustain pulses reduces screen flicker and improves luminous efficiency. This is of particular use in driving high definition plasma display panels to achieve high image quality and high luminance.

Abstract: A gas discharge panel includes a first substrate and a second substrate. A plurality of display electrode pairs which are each made up of a sustain electrode and a scan electrode are formed on the first substrate, and the first substrate and the second substrate are set facing each other with a plurality of barrier ribs in between so as to form a plurality of cells. In this gas discharge panel, at least one of the sustain electrode and the scan electrode includes: a plurality of line parts; and a discharge developing part which makes a gap between adjacent line parts smaller in areas corresponding to channels between adjacent barrier ribs than in areas corresponding to the barrier ribs.