Abstract: The interferometer 10 according to this disclosure includes: a first optical component 12 that splits each of the P polarization component and the S polarization component of the light to be measured into the first optical path R1 and the second optical path R2 and combines the light to be measured; a second optical component 13 placed in the first optical path; a third optical component 14 that splits the light to be measured into the P polarization component and the S polarization component; and a P polarization detector 11a and an S polarization detector 11b that respectively detect the P polarization component and the S polarization component split by the third optical component, wherein the second optical component has an optical surface that changes the propagation direction of the light to be measured and gives a phase difference between the P polarization component and the S polarization component.

Abstract: A digital isolator according to an embodiment includes a first electrode, a first insulating part, a second electrode, a second insulating part, and a first dielectric part. The first insulating part is located under the first electrode. The second electrode is located under the first insulating part. The second insulating part is located around the first electrode along a first plane perpendicular to a first direction. The first direction is from the second electrode toward the first electrode. The first dielectric part is located between the first electrode and the second insulating part in a second direction along the first plane. The first dielectric part contacts the first electrode. A relative dielectric constant of the first dielectric part is greater than a relative dielectric constant of the first insulating part.

Abstract: According to one embodiment, a stereoscopic image display device includes a three-dimensional pixel unit, a backlight, and an arithmetic/control circuit. The three-dimensional pixel unit includes a plurality of pixel cells that are formed of an optical material having electrically changeable optical characteristics, are arranged in a mutually separated manner and in a three-dimensional manner, and are electrically connected with transparent wiring patterns. The backlight is configured to emit illumination light to the three-dimensional pixel unit. The arithmetic/control circuit is configured to control the plurality of pixel cells individually via the wiring patterns on the basis of input three-dimensional image data to cause the three-dimensional pixel unit to function as a transmissive hologram.

Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor part located between the first electrode and the second electrode, a third electrode located in the semiconductor part, an insulating film located between the third electrode and the semiconductor part, an insulating member located in the semiconductor part at a position separated from the insulating film, a fourth electrode located in the insulating member, and a compressive stress member located in the fourth electrode. The compressive stress member has compressive stress along a first direction. The first direction is from the first electrode toward the second electrode.

Abstract: A digital isolator according to an embodiment includes a first electrode, a first insulating part, a second electrode, a second insulating part, and a first dielectric part. The first insulating part is located under the first electrode. The second electrode is located under the first insulating part. The second insulating part is located around the first electrode along a first plane perpendicular to a first direction. The first direction is from the second electrode toward the first electrode. The first dielectric part is located between the first electrode and the second insulating part in a second direction along the first plane. The first dielectric part contacts the first electrode. A relative dielectric constant of the first dielectric part is greater than a relative dielectric constant of the first insulating part.

Abstract: The interferometer 10 according to this disclosure includes: a first optical component 12 that splits each of the P polarization component and the S polarization component of the light to be measured into the first optical path R1 and the second optical path R2 and combines the light to be measured; a second optical component 13 placed in the first optical path; a third optical component 14 that splits the light to be measured into the P polarization component and the S polarization component; and a P polarization detector 11a and an S polarization detector 11b that respectively detect the P polarization component and the S polarization component split by the third optical component, wherein the second optical component has an optical surface that changes the propagation direction of the light to be measured and gives a phase difference between the P polarization component and the S polarization component.

Abstract: A shower head includes a face plate having an outer peripheral portion and a plurality of gas injection holes disposed inside the outer peripheral portion, a movable portion facing the face plate and having a gas introduction passage, and a seal interposed between the outer peripheral portion of the face plate and the movable portion. The movable portion is arranged to move, in the first direction, between a first position in which the movable portion is coupled to the face plate by interposing the seal between the movable portion and the face plate, and the gas introduction passage communicates with the inside of the chamber via the gas injection holes, and a second position in which the movable portion is separated from the face plate, and the gas introduction passage communicates with the inside of the chamber via a gap between the movable portion and the face plate.

Abstract: A shower head includes a face plate having an outer peripheral portion and a plurality of gas injection holes disposed inside the outer peripheral portion, a movable portion facing the face plate and having a gas introduction passage, and a seal interposed between the outer peripheral portion of the face plate and the movable portion. The movable portion is arranged to move, in the first direction, between a first position in which the movable portion is coupled to the face plate by interposing the seal between the movable portion and the face plate, and the gas introduction passage communicates with the inside of the chamber via the gas injection holes, and a second position in which the movable portion is separated from the face plate, and the gas introduction passage communicates with the inside of the chamber via a gap between the movable portion and the face plate.

Abstract: A semiconductor manufacturing method includes setting a relative position between first through holes of a first plate-shaped part and second through holes of a second plate-shaped part to a first relative position. The method includes supplying a first gas containing a component of the first film onto the semiconductor substrate in a reactor through the first through holes not closed with the second plate-shaped part, to form the first film on the semiconductor substrate. The method includes relatively moving the first plate-shaped part and the second plate-shaped part to change the relative position to a second relative position. The method includes supplying a second gas containing a component of the second film onto the semiconductor substrate through the first through holes not closed with the second plate-shaped part, to laminate the second film on the first film.

Abstract: According to one embodiment, a semiconductor device includes a stacked body and a pillar. The stacked body includes insulating films, electrode films, and silicon containing films. Each of the insulating films and each of the electrode films are stacked alternately. One of the silicon containing films is provided between one of the insulating films and one of the electrode films. The pillar extends in the stacked body in a stacking direction of the insulating films and the electrode films. The pillar includes a silicon pillar and a memory film. The silicon pillar extends in the stacking direction. The memory film is provided between the silicon pillar and one of the electrode films.

Abstract: According to one embodiment, a semiconductor device includes a stacked body and a pillar. The stacked body includes insulating films, electrode films, and silicon containing films. Each of the insulating films and each of the electrode films are stacked alternately. One of the silicon containing films is provided between one of the insulating films and one of the electrode films. The pillar extends in the stacked body in a stacking direction of the insulating films and the electrode films. The pillar includes a silicon pillar and a memory film. The silicon pillar extends in the stacking direction. The memory film is provided between the silicon pillar and one of the electrode films.

Abstract: A semiconductor manufacturing method includes setting a relative position between first through holes of a first plate-shaped part and second through holes of a second plate-shaped part to a first relative position. The method includes supplying a first gas containing a component of the first film onto the semiconductor substrate in a reactor through the first through holes not closed with the second plate-shaped part, to form the first film on the semiconductor substrate. The method includes relatively moving the first plate-shaped part and the second plate-shaped part to change the relative position to a second relative position. The method includes supplying a second gas containing a component of the second film onto the semiconductor substrate through the first through holes not closed with the second plate-shaped part, to laminate the second film on the first film.

Abstract: According to one embodiment, a semiconductor device includes a stacked body and a pillar. The stacked body includes insulating films, electrode films, and silicon containing films. Each of the insulating films and each of the electrode films are stacked alternately. One of the silicon containing films is provided between one of the insulating films and one of the electrode films. The pillar extends in the stacked body in a stacking direction of the insulating films and the electrode films. The pillar includes a silicon pillar and a memory film. The silicon pillar extends in the stacking direction. The memory film is provided between the silicon pillar and one of the electrode films.

Abstract: A substrate processing apparatus includes a mounting unit on which a substrate is mounted, a light generation and detection unit that forms an optical path parallel to a surface of the substrate at a location separated from the surface of the substrate by a predetermined distance and is capable of detecting shielding of the optical path, and a control unit that controls movement of at least one of the mounting unit and the optical path to control relative movement between the optical path and the substrate in a state where parallelism between the optical path and the surface of the substrate is maintained.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: The piping joint according to the present embodiment includes a joint part that joins a plurality of pipes for transporting a medium to one another. At least one conductive line is provided between the pipes so as to extend over cross-sections of the pipes. A ground part grounds the conductive line. The conductive line removes electric charges from the medium via the ground part.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: A method of manufacturing a semiconductor device in which an insulating film is filled between patterns etched into a workpiece structure is disclosed. The method includes cleaning etch residues residing between the etched patterns by a first chemical liquid; rinsing the workpiece structure cleaned by the first chemical liquid by a rinse liquid; and coating the workpiece structure rinsed by the rinse liquid with a coating liquid for formation of the insulating film. The cleaning to the coating are carried out within the same processing chamber such that a liquid constantly exists between the patterns of the workpiece structure.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).