Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).

Abstract: Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.

Abstract: According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof: X13-mR1mSiR2SiR3nX23-n??(I) wherein R1 and R3 represent a hydrogen atom or a monovalent substituent; R2 represents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; X1 and X2 represent a hydrolysable group; and m and n are an integer of from 0 to 2.

Abstract: A method of fabricating a semiconductor device includes forming trench-like recesses in a semiconductor substrate, the recesses including one or more recesses each of which has an opening width of not more than a predetermined value, forming a first insulating film above the substrate after the recesses have been formed, so that one or a plurality of voids are formed in the one or more recesses whose opening widths are not more than the predetermined value, removing part of the first insulating film so that a beam is left which spans the openings so that the beam passes over upper surfaces of the one or more recesses and so that at least the voids are exposed in a portion of the substrate except the beam, and filling the voids in the recesses with a material with fluidity, thereby forming second insulating films in the recesses.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).

Abstract: A manufacturing method for a semiconductor device includes generating on a substrate liquid-phase silanol having fluidity by causing a source gas made of a material containing silicon to react with a source gas made of a material containing oxygen, introducing the silanol into a first recess having an aspect ratio of a predetermined value wholly, and introducing the silanol into a space from a bottom to an intermediate portion in a second recess having an aspect ratio lower than the predetermined value, the first and second recesses are provided in the substrate, burying a silicon oxide film in the first recess and providing the silicon oxide film in the second recess by converting the silanol into the silicon oxide film by dehydrating condensation, and providing a dielectric film having film density higher than that of the silicon oxide film on the silicon oxide film.

Abstract: A method of fabricating a semiconductor device includes forming trench-like recesses in a semiconductor substrate, the recesses including one or more recesses each of which has an opening width of not more than a predetermined value, forming a first insulating film above the substrate after the recesses have been formed, so that one or a plurality of voids are formed in the one or more recesses whose opening widths are not more than the predetermined value, removing part of the first insulating film so that a beam is left which spans the openings so that the beam passes over upper surfaces of the one or more recesses and so that at least the voids are exposed in a portion of the substrate except the beam, and filling the voids in the recesses with a material with fluidity, thereby forming second insulating films in the recesses.

Abstract: According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof: X13-mR1mSiR2SiR3nX23-n??(I) wherein R1 and R3 represent a hydrogen atom or a monovalent substituent; R2 represents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; X1 and X2 represent a hydrolysable group; and m and n are an integer of from 0 to 2.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).

Abstract: Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).

Abstract: Disclosed is a method of forming a silicon oxide layer comprising: supplying at least a gas containing Si as a raw gas to a semiconductor substrate having a recess formed on its surface to form a primary reactant on the surface, then performing dehydration condensation to form a silicon oxide layer above the semiconductor substrate; removing a part of the silicon oxide layer until a portion of the silicon oxide layer formed in the recess that has a lower density than the silicon oxide layer formed in a vicinity of the surface is at least partially exposed; and supplying a gas containing Si to the silicon oxide layer having a lower density.

Abstract: A manufacturing method for a semiconductor device includes generating on a substrate liquid-phase silanol having fluidity by causing a source gas made of a material containing silicon to react with a source gas made of a material containing oxygen, introducing the silanol into a first recess having an aspect ratio of a predetermined value wholly, and introducing the silanol into a space from a bottom to an intermediate portion in a second recess having an aspect ratio lower than the predetermined value, the first and second recesses are provided in the substrate, burying a silicon oxide film in the first recess and providing the silicon oxide film in the second recess by converting the silanol into the silicon oxide film by dehydrating condensation, and providing a dielectric film having film density higher than that of the silicon oxide film on the silicon oxide film.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N)

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N).

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10?5 q? (mm) given with respect to a surface tension ? (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10?5 (m·sec/N)

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).

Abstract: A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a low dielectric constant insulating film having a siloxane bond as main skeleton on a semiconductor substrate, causing a surfactant to permeate the low dielectric constant insulating film, and conducting a predetermined step on the low dielectric constant insulating film permeated with the surfactant in a state adapted to be exposed to water.

Abstract: There is disclosed a film forming method comprising continuously discharging a solution adjusted so as to spread over a substrate by a given amount to the substrate through a discharge port disposed in a nozzle, moving the nozzle and substrate with respect to each other, and holding the supplied solution onto the substrate to form a liquid film, wherein a distance h between the discharge port of the nozzle and the substrate is set to be not less than 2 mm and to be in a range less than 5×10−5 q&ggr; (mm) given with respect to a surface tension &ggr; (N/m) of the solution, discharge speed q (m/sec) of the solution continuously discharged through the discharge port, and a constant of 5×10−5 (m·sec/N).