Patents by Inventor Nobuhide Yamada

Nobuhide Yamada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming coating film, method of manufacturing semiconductor device and coating solution
    Patent number: 6645881
    Abstract: A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.
    Type: Grant
    Filed: April 2, 2002
    Date of Patent: November 11, 2003
    Assignees: Kabushiki Kaisha Toshiba, JSR Corporation
    Inventors: Nobuhide Yamada, Rempei Nakata, Makoto Sugiura, Mutsuhiko Yoshioka, Takahiro Kitano, Shinji Kobayashi
  • Method of forming coating film, method of manufacturing semiconductor device and coating solution
    Publication number: 20030139063
    Abstract: A coating solution for used in a scan coating method contains a low vapor pressure solvent having a vapor pressure lower than 1 Torr (133.322 Pa) at room temperature.
    Type: Application
    Filed: April 2, 2002
    Publication date: July 24, 2003
    Inventors: Nobuhide Yamada, Rempei Nakata, Makoto Sugiura, Mutsuhiko Yoshioka, Takahiro Kitano, Shinji Kobayashi
  • Method of forming insulating film and process for producing semiconductor device
    Patent number: 6558747
    Abstract: A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.
    Type: Grant
    Filed: December 14, 2001
    Date of Patent: May 6, 2003
    Assignees: Kabushiki Kaisha Toshiba, JSR Corporation
    Inventors: Rempei Nakata, Nobuhide Yamada, Hideshi Miyajima, Akihiro Kojima, Takahiko Kurosawa, Eiji Hayashi, Youngsoon Seo, Atsushi Shiota, Kinji Yamada
  • Method for manufacturing semiconductor device
    Patent number: 6458713
    Abstract: A method of forming a film, which comprises the steps of coating a liquid raw material comprising a precursor of film-forming material dissolved in a solvent, on a surface of substrate, and forming a solid film on the surface of substrate by subjecting the substrate to a plurality of heat treatments differing in heating temperature from each other. The heat treatments differing heating temperatures from each other are performed over the same single hot plate. The film to be formed may be an organic SOG film. There is also disclosed a method of manufacturing a semiconductor device, which comprises the steps of coating a liquid raw material for forming an organosilicon oxide film on a surface of semiconductor substrate, and subjecting the semiconductor substrate to a first heat treatment where the semiconductor substrate is heated in an oxidizing atmosphere and at a temperature of 200° C. or more.
    Type: Grant
    Filed: June 28, 2000
    Date of Patent: October 1, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Nobuhide Yamada, Rempei Nakata, Hideshi Miyajima, Motonobu Kawai
  • Method of forming insulating film and process for producing semiconductor device
    Publication number: 20020086169
    Abstract: A method of forming an insulating film which includes the steps of: dissolving in a solvent a first and second polymer which each comprise methylpolysiloxane as the main component and one of which has a weight average molecular weight at least 10 times that of the other to thereby prepare a chemical solution; applying the chemical solution to a semiconductor substrate to form a coating film; and heat-treating the coating film to thereby form an organosilicon oxide film. The weight-average molecular weight of the first polymer is preferably at least 100 times that of the second polymer. Thus, an insulating organosilicon oxide film having a low dielectric constant and high cracking resistance is formed from a coating fluid.
    Type: Application
    Filed: December 14, 2001
    Publication date: July 4, 2002
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Rempei Nakata, Nobuhide Yamada, Hideshi Miyajima, Akihiro Kojima, Takahiko Kurosawa, Eiji Hayashi, Youngsoon Seo, Atsushi Shiota, Kinji Yamada
  • Method of manufacturing semiconductor device
    Publication number: 20020061657
    Abstract: A method of manufacturing a semiconductor device according to an aspect of the present invention comprises forming a low dielectric constant insulating film having a siloxane bond as main skeleton on a semiconductor substrate, causing a surfactant to permeate the low dielectric constant insulating film, and conducting a predetermined step on the low dielectric constant insulating film permeated with the surfactant in a state adapted to be exposed to water.
    Type: Application
    Filed: September 25, 2001
    Publication date: May 23, 2002
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hideshi Miyajima, Nobuhide Yamada, Nobuo Hayasaka, Nobuyuki Kurashima