Abstract: A multiple beam image acquisition apparatus includes a stage to mount thereon a target object, a beam forming mechanism to form multiple primary electron beams and a measurement primary electron beam, a primary electron optical system to collectively irradiate the target object surface with the multiple primary electron beams and the measurement primary electron beam, a secondary electron optical system to collectively guide multiple secondary electron beams generated because the target object is irradiated with the multiple primary electron beams, and a measurement secondary electron beam generated because the target object is irradiated with the measurement primary electron beam, a multi-detector to detect the multiple secondary electron beams collectively guided, a measurement mechanism to measure a position of the measurement secondary electron beam collectively guided, and a correction mechanism to correct a trajectory of the multiple secondary electron beams by using a measured position of the measureme

Abstract: According to one aspect of the present invention, an optical system adjustment method of an image acquisition apparatus includes: extracting one primary electron beam after another from primary electron beams at a plurality of preset positions among multiple primary electron beams; and adjusting, a first detector being capable of individually detecting multiple secondary electrons emitted due to irradiation of a target with the multiple primary electron beams, a trajectory of the one primary electron beam using a primary electron optics while detecting secondary electrons corresponding to the one primary electron beam for each of the primary electron beams extracted one by one using a movable second detector having an inspection surface of a size capable of detecting the multiple secondary electrons as a whole and arranged on an optical path for guiding the multiple secondary electrons to the first detector.

Abstract: According to one aspect of the present invention, an optical system adjustment method of an image acquisition apparatus includes: extracting one primary electron beam after another from primary electron beams at a plurality of preset positions among multiple primary electron beams; and adjusting, a first detector being capable of individually detecting multiple secondary electrons emitted due to irradiation of a target with the multiple primary electron beams, a trajectory of the one primary electron beam using a primary electron optics while detecting secondary electrons corresponding to the one primary electron beam for each of the primary electron beams extracted one by one using a movable second detector having an inspection surface of a size capable of detecting the multiple secondary electrons as a whole and arranged on an optical path for guiding the multiple secondary electrons to the first detector.

Abstract: A high resolution optical image is acquired by irradiating a mask with light emitted by a light source via a high resolution optical system. A low resolution optical image is acquired by irradiating the same mask with the light via a low resolution optical system. The design data of the mask pattern is corrected in light of shapes and dimensions determined according to at least one of a manufacturing process of the mask and a manufacturing process of a semiconductor device to be manufactured by transferring the mask pattern to a semiconductor wafer. Reference image data are generated corresponding to the high resolution optical image and the low resolution optical image. Whether the defect detected in the high resolution optical image is true or false is determined according to information of the defect detected in the low resolution optical image.

Abstract: An inspection apparatus includes a lighting unit, an imaging unit, an optical image comparison unit, a map creation unit, a map storage unit, a first storage unit, a map comparison unit, and a first determination unit. The lighting unit irradiates a sample including a defect to be inspected with a lighting light. The imaging unit obtains either or both of a first optical image formed by the lighting light transmitted through the sample to be inspected and a second optical image formed by the lighting light reflected by the sample to be inspected and obtains either or both of a third optical image formed by the lighting light transmitted through the sample to be inspected and having a corrected defect and a fourth optical image formed by the lighting light reflected by the sample to be inspected and having a corrected defect.

Abstract: A multiple beam image acquisition apparatus includes a stage to mount thereon a target object, a beam forming mechanism to form multiple primary electron beams and a measurement primary electron beam, a primary electron optical system to collectively irradiate the target object surface with the multiple primary electron beams and the measurement primary electron beam, a secondary electron optical system to collectively guide multiple secondary electron beams generated because the target object is irradiated with the multiple primary electron beams, and a measurement secondary electron beam generated because the target object is irradiated with the measurement primary electron beam, a multi-detector to detect the multiple secondary electron beams collectively guided, a measurement mechanism to measure a position of the measurement secondary electron beam collectively guided, and a correction mechanism to correct a trajectory of the multiple secondary electron beams by using a measured position of the measureme

Abstract: A pattern inspection method includes: scanning an inspection substrate, to be inspected, to detect a secondary electron group emitted from the inspection substrate due to irradiation with the multiple beams; correcting individually distortion of a first region image obtained from a detection signal of secondary electrons corresponding to a corresponding first region for each beam of the multiple beams; correcting distortion of a corresponding second region image corresponding to a second region larger than the first region for each of the second region images, using data of each of the first region images in which the distortion of the corresponding first region image has been corrected; and comparing an inspection image to be inspected, in which the distortion of each of the plurality of second region images has been corrected, with a reference image of a same region to output a result thereof.

Abstract: According to one aspect of the present invention, an optical system adjustment method of an image acquisition apparatus includes: extracting one primary electron beam after another from primary electron beams at a plurality of preset positions among multiple primary electron beams; and adjusting, a first detector being capable of individually detecting multiple secondary electrons emitted due to irradiation of a target with the multiple primary electron beams, a trajectory of the one primary electron beam using a primary electron optics while detecting secondary electrons corresponding to the one primary electron beam for each of the primary electron beams extracted one by one using a movable second detector having an inspection surface of a size capable of detecting the multiple secondary electrons as a whole and arranged on an optical path for guiding the multiple secondary electrons to the first detector.

Abstract: A pattern inspection apparatus includes a stage to mount thereon a substrate with patterns formed thereon and be able to move two-dimensionally, plural detectors of a two-dimensional scale, whose height positions are mutually different and arranged at positions on the stage different from the substrate position, to perform measurement, the body of the two-dimensional scale arranged fixed to a position facing the plural detectors, a sensor to acquire an optical image of the pattern on the substrate, in a state where the stage with the substrate is moving in one direction on a surface for the two-dimensional movement, a calculation circuitry to calculate an image acquiring position of the optical image by using position information measured by the two-dimensional scale, and a comparison circuitry to compare, using a reference image corresponding to the image acquiring position of the optical image, the optical image with the reference image for each pixel.

Abstract: A pattern inspection apparatus includes a column to scan a substrate on which a pattern is formed, using multi-beams composed of a plurality of electron beams, a first stage to be able to move up to a first stroke by which an entire surface of an inspection region of the substrate can be irradiated with the multi-beams, a second stage, arranged on the first stage, to be able to move up to a second stroke sufficiently shorter than the first stroke and to place the substrate thereon, and a detector to detect secondary electrons emitted from the substrate because the substrate is irradiated with the multi-beams.

Abstract: A high resolution optical image is acquired by irradiating a mask with light emitted by a light source via a high resolution optical system. A low resolution optical image is acquired by irradiating the same mask with the light via a low resolution optical system. The design data of the mask pattern is corrected in light of shapes and dimensions determined according to at least one of a manufacturing process of the mask and a manufacturing process of a semiconductor device to be manufactured by transferring the mask pattern to a semiconductor wafer. Reference image data are generated corresponding to the high resolution optical image and the low resolution optical image. Whether the defect detected in the high resolution optical image is true or false is determined according to information of the defect detected in the low resolution optical image.

Abstract: A mask inspection apparatus includes an optical image acquisition unit configured to acquire an optical image by irradiating light on a mask, a reference image generation unit configured to generate a reference image from design data of the mask, a comparison circuit configured to compare the optical image with the reference image, a pattern data extraction unit configured to obtain coordinates of a defective portion determined to be defective by the comparison unit and to extract, from the design data, pattern data of a predetermined dimension range including the coordinates, and an interface unit configured to supply an aerial image measurement apparatus with information associated with the defect, the information including the defect coordinates and the extracted pattern data.

Abstract: An inspection method includes: irradiating a first portion of a sample to be inspected with a lighting light; obtaining a first optical image in which the lighting light transmitted through the first portion is imaged or a second optical image in which the lighting light reflected by the first optical image is imaged; based on a first defect determination threshold, performing a first comparison between a first reference image referred to the first optical image and the first optical image or a second comparison between a second reference image referred to the second optical image and the second optical image; determining whether the first portion includes a first defect; storing a first coordinate of the first defect, the first defect determination threshold, the first optical image or the second optical image, and the first reference image or the second reference image in a case where the first portion is determined to have the first defect; calculating the number of first defects in the first portion as a

Abstract: A pattern inspection apparatus includes a column to scan a substrate on which a pattern is formed, using multi-beams composed of a plurality of electron beams, a stage to mount the substrate thereon and to be movable, a detector to detect secondary electrons emitted from the substrate because the substrate is irradiated with the multi-beams, and a drive mechanism to move the detector in order to follow movement of the stage.

Abstract: A measuring apparatus includes an input unit to input optical image data of a figure pattern obtained by a pattern inspection apparatus which inspects a defect of a pattern on a target object to be inspected by scanning an inspection region of the target object, from the pattern inspection apparatus, and to input reference image data generated from design data of the pattern by the pattern inspection apparatus to be compared with the optical image data, from the pattern inspection apparatus, a positional deviation distribution generation unit to generate positional deviation distribution by measuring positional deviation of the pattern on the target object, by using the optical image data and the reference image data input from the pattern inspection apparatus, and an output unit to output generated positional deviation distribution of the pattern on the target object, wherein the measuring apparatus is arranged independently from the pattern inspection apparatus.

Abstract: A pattern inspection apparatus includes a column to scan a substrate on which a pattern is formed, using multi-beams composed of a plurality of electron beams, a first stage to be able to move up to a first stroke by which an entire surface of an inspection region of the substrate can be irradiated with the multi-beams, a second stage, arranged on the first stage, to be able to move up to a second stroke sufficiently shorter than the first stroke and to place the substrate thereon, and a detector to detect secondary electrons emitted from the substrate because the substrate is irradiated with the multi-beams.

Abstract: A pattern inspection apparatus includes a column to scan a substrate on which a pattern is formed, using multi-beams composed of a plurality of electron beams, a stage to mount the substrate thereon and to be movable, a detector to detect secondary electrons emitted from the substrate because the substrate is irradiated with the multi-beams, and a drive mechanism to move the detector in order to follow movement of the stage.

Abstract: A pattern inspection apparatus includes a data processing circuitry to input detection data based on a secondary electron from a substrate for each irradiation unit region, where n1×m1 irradiation unit regions in irradiation unit regions configure one of n2×m2 image reference regions configuring an inspection measurement image, to calculate, for each of the n2×m2 image reference regions, a statistic value acquired from the detection data of all the n1×m1 irradiation unit regions in one of the n2×m2 image reference regions, and to define the statistic value as image reference data for the image reference region, and a comparison processing circuitry to receive transmission of the image reference data for each image reference region, and to compare, using a reference image corresponding to the inspection measurement image composed of the n2×m2 image reference regions, the measurement image with the reference image for each image reference region.

Abstract: A first output value evaluation device obtains an average value of output values of optical image data for each of unit regions and creates a distribution map of an average value in an inspected region. A first defect history management device creates a distribution map related with the shape of the pattern from the distribution map of the average value and holds the created distribution map. A second output value evaluation device obtains at least one of a variation value and deviation of the output value of each pixel in the unit region. A defect determination device compares the obtained value with a threshold value. A second defect history management device holds information of the output value determined as a defect in the defect determination device. A defect/defect history analysis device analyzes, and checks the information from the first defect history management device and the second defect history management device.

Abstract: A pattern inspection apparatus includes a stage to mount thereon a substrate with patterns formed thereon and be able to move two-dimensionally, plural detectors of a two-dimensional scale, whose height positions are mutually different and arranged at positions on the stage different from the substrate position, to perform measurement, the body of the two-dimensional scale arranged fixed to a position facing the plural detectors, a sensor to acquire an optical image of the pattern on the substrate, in a state where the stage with the substrate is moving in one direction on a surface for the two-dimensional movement, a calculation circuitry to calculate an image acquiring position of the optical image by using position information measured by the two-dimensional scale, and a comparison circuitry to compare, using a reference image corresponding to the image acquiring position of the optical image, the optical image with the reference image for each pixel.