Patents by Inventor Nobutoshi Fujii

Nobutoshi Fujii has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11322538
    Abstract: The present technology relates to an imaging device, an electronic apparatus, and a method of manufacturing an imaging device capable of thinning a semiconductor on a terminal extraction surface while maintaining a strength of a semiconductor chip. There is provided an imaging device including: a first substrate having a pixel region in which pixels are two-dimensionally arranged, the pixels performing photoelectric conversion of light; and a second substrate in which a through silicon via is formed, in which a dug portion is formed in a back surface of the second substrate opposite to an incident side of light of the second substrate, and a redistribution layer (RDL) connected to a back surface of the first substrate is formed in the dug portion. The present technology can be applied to, for example, a semiconductor package including a semiconductor chip.
    Type: Grant
    Filed: February 8, 2018
    Date of Patent: May 3, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Suguru Saito, Nobutoshi Fujii
  • Patent number: 11262485
    Abstract: There is provided imaging devices and methods of forming the same, the imaging devices, including: a photodetector layer; and a light-blocking member stacked above the photodetector layer, where the light-blocking member includes at least one light-transmitting portion and at least one lens portion.
    Type: Grant
    Filed: June 24, 2016
    Date of Patent: March 1, 2022
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Nobutoshi Fujii, Hiroyuki Itou
  • Patent number: 11264272
    Abstract: The present technology relates to Provided are a semiconductor device in which an air gap structure can be formed in any desired region regardless of the layout of metallic wiring lines, a method for manufacturing the semiconductor device, and an electronic apparatus. A first wiring layer and a second wiring layer including a metallic film are stacked via a diffusion preventing film that prevents diffusion of the metallic film. The diffusion preventing film is formed by burying a second film in a large number of holes formed in a first film. At least the first wiring layer includes the metallic film, an air gap, and a protective film formed with the second film on the inner peripheral surface of the air gap, and the opening width of the air gap is equal to the opening width of the holes formed in the first film or is greater than the opening width of the holes.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: March 1, 2022
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Suguru Saito, Nobutoshi Fujii, Masaki Haneda, Kazunori Nagahata
  • Publication number: 20220043241
    Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.
    Type: Application
    Filed: October 26, 2021
    Publication date: February 10, 2022
    Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Yusuke MORIYA, Masanori IWASAKI, Takashi OINOUE, Yoshiya HAGIMOTO, Hiroyasu MATSUGAI, Hiroyuki ITOU, Suguru SAITO, Keiji OHSHIMA, Nobutoshi FUJII, Hiroshi TAZAWA, Toshiaki SHIRAIWA, Minoru ISHIDA
  • Publication number: 20220013567
    Abstract: The present disclosure includes a first substrate including a first wiring layer having a first connection electrode projecting by a predetermined quantity from a first interlayer insulation film and a second wiring layer having a second connection electrode projecting by a predetermined quantity from a second interlayer insulation film. On a bonded surface between the first and second substrates, the first and second connection electrodes are joined with each other, and at the same time, at least a part of the first interlayer insulation film and a part of the second interlayer insulation film which face to each other in a lamination direction are joined with each other.
    Type: Application
    Filed: April 26, 2021
    Publication date: January 13, 2022
    Inventors: NOBUTOSHI FUJII, KENICHI AOYAGI
  • Publication number: 20210408092
    Abstract: Provided is an imaging device (1) including: an imaging element (10); and a semiconductor element (20, 30) provided to be opposed to the imaging element and electrically coupled to the imaging element. The semiconductor element includes: a wiring region (20A, 30A) provided in a middle portion and a peripheral region (20B, 30B) outside the wiring region; a wiring layer (22, 32) having a wiring line in the wiring region; a semiconductor substrate (21, 31) opposed to the imaging element with the wiring layer interposed therebetween and having a first surface (Sa, Sc) and a second surface (Sb, Sd) in order from a side of the wiring layer; and a polishing adjustment section (23, 33) including a material that is lower in polishing rate than a constituent material of the semiconductor substrate, the polishing adjustment section being disposed in at least a portion of the peripheral region and provided in a thickness direction of the semiconductor substrate from the second surface.
    Type: Application
    Filed: October 9, 2019
    Publication date: December 30, 2021
    Inventors: Sotetsu SAITO, Suguru SAITO, Nobutoshi FUJII
  • Publication number: 20210391369
    Abstract: To provide a semiconductor device having a structure suitable for higher integration. This semiconductor device includes: a first semiconductor substrate; and a second semiconductor substrate. The first semiconductor substrate is provided with a first electrode including a first protruding portion and a first base portion. The first protruding portion includes a first abutting surface. The first base portion is linked to the first protruding portion and has volume greater than volume of the first protruding portion. The second semiconductor substrate is provided with a second electrode including a second protruding portion and a second base portion. The second protruding portion includes a second abutting surface that abuts the first abutting surface. The second base portion is linked to the second protruding portion and has volume greater than volume of the second protruding portion. The second semiconductor substrate is stacked on the first semiconductor substrate.
    Type: Application
    Filed: September 17, 2019
    Publication date: December 16, 2021
    Inventors: YOSHIYA HAGIMOTO, NOBUTOSHI FUJII
  • Patent number: 11194135
    Abstract: The present technology relates to, for example, a lens attached substrate including a substrate which has a through-hole formed therein and a light shielding film formed on a side wall of the through-hole and a lens resin portion which is formed inside the through-hole of the substrate. The present technology can be applied to, for example, a lens attached substrate, a layered lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic device, a computer, a program, a storage medium, a system, and the like.
    Type: Grant
    Filed: July 10, 2019
    Date of Patent: December 7, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Yusuke Moriya, Masanori Iwasaki, Takashi Oinoue, Yoshiya Hagimoto, Hiroyasu Matsugai, Hiroyuki Itou, Suguru Saito, Keiji Ohshima, Nobutoshi Fujii, Hiroshi Tazawa, Toshiaki Shiraiwa, Minoru Ishida
  • Publication number: 20210366958
    Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.
    Type: Application
    Filed: August 3, 2021
    Publication date: November 25, 2021
    Applicant: Sony Group Corporation
    Inventors: Nobutoshi Fujii, Yoshiya Hagimoto, Kenichi Aoyagi, Yoshihisa Kagawa
  • Publication number: 20210305300
    Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
    Type: Application
    Filed: January 8, 2021
    Publication date: September 30, 2021
    Applicant: SONY CORPORATION
    Inventors: Atsushi YAMAMOTO, Shinji MIYAZAWA, Yutaka OOKA, Kensaku MAEDA, Yusuke MORIYA, Naoki OGAWA, Nobutoshi FUJII, Shunsuke FURUSE, Masaya NAGATA, Yuichi YAMAMOTO
  • Patent number: 11130299
    Abstract: To suppress occurrence of contamination or damage to a lens. In the present technology, for example, a manufacturing apparatus allows a spacer which is thicker than a height of a lens resin portion protruded from a substrate to be adhered to the substrate. In addition, for example, in the present technology, the manufacturing apparatus molds the lens resin portion inside a through-hole formed in the substrate by using a mold frame configured with two layers of molds and, after molding the lens resin portion, in the state that one mold is adhered to the substrate, the manufacturing apparatus demolds the substrate from the other mold. The present technology can be applied to, for example, a lens-attached substrate, a stacked lens structure, a camera module, a manufacturing apparatus, a manufacturing method, an electronic apparatus, a computer, a program, a storage medium, a system, or the like.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: September 28, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Hiroshi Tazawa, Toshihiro Kurobe, Sotetsu Saito, Hiroyasu Matsugai, Hiroyuki Itou, Suguru Saito, Keiji Ohshima, Nobutoshi Fujii, Toshiaki Shiraiwa, Minoru Ishida
  • Patent number: 11107855
    Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: August 31, 2021
    Assignee: SONY CORPORATION
    Inventors: Nobutoshi Fujii, Yoshiya Hagimoto, Kenichi Aoyagi, Yoshihisa Kagawa
  • Publication number: 20210265200
    Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
    Type: Application
    Filed: March 8, 2021
    Publication date: August 26, 2021
    Applicant: Sony Corporation
    Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii
  • Publication number: 20210183931
    Abstract: The present disclosure relates to a solid-state imaging element, a manufacturing method, and an electronic apparatus which are capable of further improving a light-blocking effect. The solid-state imaging element having a laminated structure in which a memory substrate, a logic substrate, and a sensor substrate are laminated includes: a through electrode that connects the memory substrate and the sensor substrate in a manner passing through a semiconductor layer of the logic substrate; a light-blocking metal film arranged in a wiring layer included in the logic substrate and provided on the sensor substrate side, and the light-blocking metal film having an opening opened so as to allow the through electrode to pass through; and a contact electrode formed on a bonded surface between the logic substrate and the sensor substrate and used to connect the through electrode to the sensor substrate side.
    Type: Application
    Filed: October 24, 2018
    Publication date: June 17, 2021
    Inventor: NOBUTOSHI FUJII
  • Patent number: 11031431
    Abstract: A semiconductor device including a plurality of substrates that is stacked, each of the substrates including a semiconductor substrate and a multi-layered wiring layer stacked on the semiconductor substrate, the semiconductor substrate having a circuit with a predetermined function formed thereon. Bonding surfaces between two substrates among the plurality of substrates have an electrode junction structure in which electrodes formed on the respective bonding surfaces are joined in direct contact with each other, the electrode junction structure being a structure for electrical connection between the two substrates.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: June 8, 2021
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Nobutoshi Fujii, Yoshiya Hagimoto
  • Patent number: 11024658
    Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.
    Type: Grant
    Filed: March 2, 2020
    Date of Patent: June 1, 2021
    Assignee: SONY CORPORATION
    Inventors: Atsushi Yamamoto, Shinji Miyazawa, Yutaka Ooka, Kensaku Maeda, Yusuke Moriya, Naoki Ogawa, Nobutoshi Fujii, Shunsuke Furuse, Masaya Nagata, Yuichi Yamamoto
  • Patent number: 10991745
    Abstract: A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: April 27, 2021
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Suguru Saito, Nobutoshi Fujii, Ryosuke Matsumoto, Yoshifumi Zaizen, Shuji Manda, Shunsuke Maruyama, Hideo Shimizu
  • Patent number: 10985102
    Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
    Type: Grant
    Filed: May 13, 2019
    Date of Patent: April 20, 2021
    Assignee: Sony Corporation
    Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii
  • Publication number: 20200365639
    Abstract: A deformation of a stacked lens is suppressed. A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.
    Type: Application
    Filed: July 31, 2020
    Publication date: November 19, 2020
    Applicant: Sony Corporation
    Inventors: Hiroyasu MATSUGAI, Hiroyuki ITOU, Suguru SAITO, Keiji OHSHIMA, Masanori IWASAKI, Toshihiko HAYASHI, Shuzo SATO, Nobutoshi FUJII, Hiroshi TAZAWA, Toshiaki SHIRAIWA, Minoru ISHIDA
  • Publication number: 20200350198
    Abstract: The present technology relates to a semiconductor device in which an air gap structure can be formed in any desired region regardless of the layout of metallic wiring lines, a method for manufacturing the semiconductor device, and an electronic apparatus. A first wiring layer and a second wiring layer including a metallic film are stacked via a diffusion preventing film that prevents diffusion of the metallic film. The diffusion preventing film is formed by burying a second film in a large number of holes formed in a first film. At least the first wiring layer includes the metallic film, an air gap, and a protective film formed with the second film on the inner peripheral surface of the air gap, and the opening width of the air gap is equal to the opening width of the holes formed in the first film or is greater than the opening width of the holes. For example, the present technology can be applied to a semiconductor device in which wiring layers are stacked, and the like.
    Type: Application
    Filed: December 28, 2018
    Publication date: November 5, 2020
    Inventors: SUGURU SAITO, NOBUTOSHI FUJII, MASAKI HANEDA, KAZUNORI NAGAHATA