Abstract: A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.

Abstract: A fieldless array includes a semiconductor substrate, a plurality of oxide-nitride-oxide (ONO) structures formed over the upper surface of the semiconductor substrate, and a plurality of word lines formed over the ONO structures, wherein each of the ONO structures is substantially covered by one of the word lines. The word lines (typically polysilicon) block UV irradiation during subsequent processing steps, thereby substantially preventing electrons from being trapped in the silicon nitride layer of the ONO structure. As a result, the threshold voltages of the fieldless array transistors do not severely increase as the width of the fieldless array transistors decrease.

Abstract: A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.

Abstract: First, on a semiconductor region of a first conductivity type, a trapping film is formed which stores information by accumulating charges. Then, the trapping film is formed with a plurality of openings, and impurity ions of a second conductivity type are implanted into the semiconductor region from the formed openings, thereby forming a plurality of diffused layers of the second conductivity type in portions of the semiconductor region located below the openings, respectively. An insulating film is formed to cover edges of the trapping film located toward the openings, and then the semiconductor region is subjected to a thermal process in an atmosphere containing oxygen to oxidize upper portions of the diffused layers. Thereby, insulating oxide films are formed in the upper portions of the diffused layers, respectively. Subsequently, a conductive film is formed over the trapping film including the edges thereof to form an electrode.

Abstract: A semiconductor memory device has a memory region which is formed on a semiconductor substrate and in which a plurality of memory cells each including a memory transistor are arranged as a matrix using a plurality of impurity diffusion layers (bit lines) and a plurality of gate electrodes (word lines) intersecting each other. The gate electrode of each of the memory transistors has an upper surface thereof formed into a protruding portion which is higher in level at the middle portion than at the edge portions. A silicide layer is formed on the upper surface of the protruding portion of the gate electrode of each of the memory transistors.

Abstract: In a method for fabricating a semiconductor device in which a semiconductor memory element having an ONO film and a CMOS part are formed on a single semiconductor substrate, a CMOS gate-oxidation step is performed several times. Thereafter, a bit line diffusion layer and a bit line oxide film are formed in the semiconductor memory element.

Abstract: The acylacetonitrile compound of the invention is represented by the formula (1): wherein R1 represents —C(O)ZR2; R2 represents C1-6 alkyl, C1-4 haloalkyl or the like; Z represents oxygen or sulfur; X and Y independently represent halogen, C1-6 alkyl or C1-4 haloalkyl; and m and n are independently an integer of 1 to 3. The acylacetonitrile compound of the invention exhibits excellent miticidal and ovicidal activities for mites over a long period. Therefore, the acylacetonitrile compound of the invention is useful as a miticide.

Abstract: A fieldless array includes a semiconductor substrate, a plurality of oxide-nitride-oxide (ONO) structures formed over the upper surface of the semiconductor substrate, and a plurality of word lines formed over the ONO structures, wherein each of the ONO structures is substantially covered by one of the word lines. The word lines (typically polysilicon) block UV irradiation during subsequent processing steps, thereby substantially preventing electrons from being trapped in the silicon nitride layer of the ONO structure. As a result, the threshold voltages of the fieldless array transistors do not severely increase as the width of the fieldless array transistors decrease.

Abstract: The acylacetonitrile compound of the invention is represented by the formula (1): 1

Abstract: A power source element has a positive electrode case, a negative electrode case, and a pair of connecting terminals, each having a first end portion connected to a respective one of the positive and negative electrode cases, a second end portion for connection to a circuit board, and an intermediate portion disposed between the first and second end portions. The intermediate portion of each of the connecting terminals has a weakened region so that the first end portion is separated from the second end portion along a weakened line in the weakened region upon relative movement between the first and second end portions in a give direction.

Abstract: Problems of a dead-time due to a make-contact delay time until the closure of the regeneration contactor and a drop of torque occurring in the prior art controller for an electric vehicle are solved by the invention, thereby providing an improved drive feeling during transition from its regenerating braking to plugging braking. Specifically, a regeneration contactor's contact voltage is entered to the arithmetic unit, upon set-up of a condition for stopping the regenerating braking, the control for closing the regeneration contactor is executed, and immediately upon detection of the actual closure thereof, the switching operation is cut off at a timing faster than the switching cycle thereby allowing for the transition to the plugging braking to be enabled.

Abstract: A 4-aryl-4-substituted pyrazolidine-3,5-dione derivative represented by the formula (1) is useful as an effective component of a miticide, insecticide or herbicide wherein R1 and R2 are each independently alkyl group having 1 to 4 carbon atoms, or R1 and R2, when taken together, represent saturated or unsaturated bivalent hydrocarbon group having 3 or 4 carbon atoms which may optionally be substituted with alkyl group having 1 to 4 carbon atoms, or halogen atom, X is alkyl group having 1 to 4 carbon atoms, haloalkyl group having 1 to 4 carbon atoms or halogen atom, Y is halogen atom or nitro group, and n is an integer of 0 to 3.

Abstract: The object of the present invention is to provide a novel 4, 5-dihydropyrazole-5-thione derivative which exerts remarkably potent miticidal activity. The 4, 5-dihydropyrazole-5-thione derivative of the present invention is represented by the general formula ##STR1## wherein R.sup.1 represents a straight- or branched-chain alkyl group having 1 to 12 carbon atoms or the like; R.sup.2 and R.sup.3 represent a lower alkyl group or the like; X represents a halogen atom or the like, n is 0 or an integer of 1 to 3; and A represents .paren open-st.C.paren close-st. or .paren open-st.N.paren close-st..

Abstract: A boiling type cooling device for cooling power semiconductors includes an evaporator containing an aqueous solution of ethylene glycol as a cooling medium, a condenser; and a vapor and liquid return pipe. According to a first aspect, the lowest portion of the condensor is at a level higher than the top surface of the cooling medium in the evaporator, the bottom surfaces of the condensor being tilted downward toward the top end of the liquid return pipe. According to another aspect, a pump is provided in the liquid return pipe for driving cooling medium to the evaporator. According to still other aspects, the liquid return pipe is covered with a heat insulating material, or a rubber string extends centrally therewithin. A deaeration device for the aqueous solution of ethylene glycol includes two separate deaeration baths and a mixing bath.

Abstract: The present invention is directed to an electric-car controller comprising a chopper for controlling the speed of a DC motor, a by-pass contactor for applying a DC source voltage directly to the DC motor, means for detecting that an acceleration command has reached a certain specified value or above, means for detecting that the acceleration of the car has dropped to a certain specified value or below, and means for turning on the by-pass contactor when the acceleration command has reached the certain specified value or above and the acceleration of the car has dropped to the certain specified value or below.

Abstract: Apparatus for regulating the humidity inside a semi-sealed, partly air-permeable container for a magnetic disk drive. An opening provided in the semi-sealed container is sealed by an insulated humidity regulating element which includes a hydrogen ion conductor (which may be a solid electrolyte) and porous film-like first and second electrodes that are bonded to respective surfaces of both sides of the hydrogen ion conductor. A DC voltage is impressed across both electrodes to regulate the humidity.

Abstract: A device for increasing the factor of adhesion between the wheel of a railway vehicle and a rail, in which adhesion increasing grains are ejected together with air to a point between the wheel and the rail. The vertical aim of the ejection nozzle is automatically controlled depending on the deflection of an elastic member between the undercarriage and the wheel.

Abstract: A sanding apparatus improves adhesion between a railcar wheel and a rail by supplying adhesion intensifying particles to the contact faces. Sand and/or quartz particles, having diameters such that at least 50% of the particles are 100 to 300 micrometers, are mixed with compressed air and jetted at high velocity through a U-shaped storage chamber, out a nozzle, to the wheel-rail contact area. In the nozzle, a compressed air supply pipe surrounds and projects beyond the end of the particle supply pipe to create an air curtain surrounding the jetted particles. A heater, a heat insulation member, or constantly leaking air may be used to prevent freezing in the pipes.

Abstract: A casing has an inlet opening and outlet openings. A partition wall divides the interior of the casing into first and second chambers and also divides the inlet opening into two segments communicating separately with the first and second chambers. A heat exchanger extends into both of the first and second chambers. Air is supplied from the first chamber to a front area of a vehicle interior via at least one of the outlet openings. Air is normally supplied from the second chamber to a rear area of the vehicle interior via the other outlet opening.