Abstract: A method of manufacturing a bipolar transistor. A first mask material film pattern is formed on an internal base region prospective portion on a collector region of a first conductive type, and then a first conductive film is deposited. A recess around the projection of the mask film pattern are transferred on the surface of the first conductive film. After a second mask material film pattern is buried in the recess, the first conductive film is selectively etched using the second mask material pattern as a mask, thereby exposing the first mask material film pattern. The first conductive film is continuously, selectively etched by anisotropic etching using the exposed first mask material film pattern and the second mask material film pattern as etching masks to form a first opening between the two mask material film patterns. An impurity of a second conductivity type is doped in the wafer through the first opening to form an external base region of the second conductivity type.

Abstract: In a bipolar transistor, having a micronized structure for a high-speed LSI, which is fabricated by a self-alignment technology, a barrier insulating film is buried in a portion around an emitter layer so as to be deeper than a junction level between an active base layer and a collector layer. When a polysilicon film pattern which defines an active base region and serves as a portion of a base electrode is formed on a wafer surface, a surface portion of a photoresist serving as an etching mask is converted to a carbonized layer by ion implantation. When a micronized emitter layer is formed by a polysilicon-emitter technology, ion implantation is performed before deposition of the polysilicon film or an impurity is doped in the polysilicon film simultaneously with deposition, and rapid thermal annealing is performed so as to activate the doped impurity.

Abstract: A reaction tube of a reaction apparatus includes a circular cylindrical inner tube and an intermediate tube disposed concentrically with the inner tube. A catalyst used in reforming reactions is charged in the gap between the inner and the intermediate tubes. The inner tube accommodates filler particles and is provided with a hollow member disposed therein in contact with the filler particles and capable of absorbing stress resulting from thermal expansion of the filler particles. By virtue of the provision of the hollow member which absorbs thermal stress of the filler particles that are caused to undergo thermal expansion by a high-temperature gas, such as a combustion gas, flowing through the inside of the inner tube, the apparatus is capable of preventing any deformation or breakage of the inner tube.

Abstract: A method of manufacturing a semiconductor device comprising steps of forming a trench on a semiconductor substrate, forming a first film on the surface of the semiconductor substrate so as to have a large thickness on an upper portion of a side surface of the trench, and to have a small thickness on a bottom portion of the trench, selectively doping an impurity in the bottom portion of the trench through a thin portion of the first film formed on the bottom portion of the trench to form an impurity region on the bottom portion of the trench, removing the first film, and forming a second film having an insulating property on the surface of the semiconductor substrate. A dielectric material or conductive material layer is formed in the trench in which the second film is formed on the inner surface. When the dielectric material or the conductive material layer is formed in the trench, a method of this invention can be applied to formation of trench isolation.

Abstract: A method of manufacturing a bipolar transistor is disclosed. A first mask material film pattern is formed on an internal base region prospective portion on a collector region of a first conductive type, and then a first conductive film is deposited. A recess around the projection of the mask film pattern are transferred on the surface of the first conductive film. After a second mask material film pattern is buried in the recess, the first conductive film is selectively etched using the second mask material pattern as a mask, thereby exposing the first mask material film pattern. The first conductive film is continuously, selectively etched by anisotropic etching using the exposed first mask material film pattern and the second mask material film pattern as etching masks to form a first opening between the two mask material film patterns. An impurity of a second conductivity type is doped through the first opening to form an external base region.