Patents by Inventor Nobuyuki Shirai

Nobuyuki Shirai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080105309
    Abstract: A valve device for high-pressure gas opens and closes a communication hole for communicating a primary pressure chamber, into which the high-pressure gas flows, to a secondary pressure chamber where pressure is lower than that of the primary pressure chamber. The valve device has a valve seat member provided at the communication hole and a valve body that is caused to be seated on and to leave from the valve seat member to open and close the communication hole. The communication hole has an opening connected to the primary pressure chamber. The opening has a reception recess opened toward the primary pressure chamber. In the reception recess is fitted the valve seat member. As a result, the valve device can achieve sufficient sealing ability.
    Type: Application
    Filed: November 24, 2005
    Publication date: May 8, 2008
    Inventors: Munetoshi Kuroyanagi, Hidetoshi Fujiwara, Toshihiko Shima, Takuya Suzuki, Tadayoshi Kamiya, Soichi Shirai, Nobuyuki Shirai
  • Publication number: 20080073714
    Abstract: A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
    Type: Application
    Filed: November 21, 2007
    Publication date: March 27, 2008
    Inventors: Nobuyuki SHIRAI, Nobuyoshi Matsuura
  • Publication number: 20080061756
    Abstract: A capacitor is disposed between the output side and the ground potential of an inductor which creates an output voltage. A first switch element supplies a current from an input voltage to an input side of the inductor, and a second switch element which is turned on when the first switch element is off sets the input side of the inductor to a prescribed potential. A control circuit detects the arrival of the voltage on the input side of the inductor at a high voltage corresponding to the input voltage when the load circuit is in a light load state and the second switch element is off, and turns on the first switch element. It invalidates the detection output of the voltage detecting circuit when the load circuit is in a heavy load state and, after the second switch element is turned off, turns on the first switch element.
    Type: Application
    Filed: October 31, 2007
    Publication date: March 13, 2008
    Inventors: Nobuyuki Shirai, Ryotaro Kudo
  • Patent number: 7317224
    Abstract: A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
    Type: Grant
    Filed: July 14, 2005
    Date of Patent: January 8, 2008
    Assignee: Renesas Technology Corp.
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura
  • Patent number: 7307406
    Abstract: A capacitor is disposed between the output side and the ground potential of an inductor which creates an output voltage. A first switch element supplies a current from an input voltage to an input side of the inductor, and a second switch element which is turned on when the first switch element is off sets the input side of the inductor to a prescribed potential. A control circuit detects the arrival of the voltage on the input side of the inductor at a high voltage corresponding to the input voltage when the load circuit is in a light load state and the second switch element is off, and turns on the first switch element. It invalidates the detection output of the voltage detecting circuit when the load circuit is in a heavy load state and, after the second switch element is turned off, turns on the first switch element.
    Type: Grant
    Filed: August 28, 2006
    Date of Patent: December 11, 2007
    Assignee: Renesas Technology Corp.
    Inventors: Nobuyuki Shirai, Ryotaro Kudo
  • Publication number: 20070196950
    Abstract: Disclosed is a semiconductor device which makes it easy to design a wiring pattern for a wiring substrate on which the semiconductor device is to be mounted. In manufacturing plural semiconductor devices for providing different amounts of output current, arrangements and numbers of leads to which semiconductor chips for power transistors of the semiconductor devices are to be electrically connected are changed according to output current requirements for the semiconductor devices, whereas arrangements and numbers of leads to which semiconductor chips for control circuits of the semiconductor devices are to be electrically connected are fixed to be common to the semiconductor devices. In this way, the probability of malfunction of control circuits (PWM circuits) of the semiconductor devices can be reduced, so that a semiconductor device which makes it easy to design a wiring pattern for a wiring substrate on which the semiconductor device is to be mounted can be provided.
    Type: Application
    Filed: December 29, 2006
    Publication date: August 23, 2007
    Inventors: Nobuyuki SHIRAI, Ryotaro Kudo, Yukihiro Sato
  • Publication number: 20070090317
    Abstract: In order to obtain a solenoid valve device installed in a gas tank that is small in size and easy to attach to a gas tank, a valve body (8) including a flow passage (a) formed therein to communicate the inside and the outside of a gas tank (1) is inserted to the inside from the outside through a mouth hole (2) of the gas tank (1) and attached to the mouth hole (2). A valve seat (46) is provided in the flow passage (a), and a movable valve element (40) attached to or detached from the valve seat (46) is provided in the valve body (8). A solenoid unit (48) includes a movable core (50) engaged with the valve element (40) and a fixed core (64) facing the movable core (50) to attract the movable core (50) by the energization of a coil (74) and distract the movable core (50) by the non-energization of the coil (74). The solenoid unit (48) is arranged inside a storage hole (16) formed at an end part of the valve body (8) inside the gas tank (1).
    Type: Application
    Filed: November 2, 2004
    Publication date: April 26, 2007
    Inventors: Tadayoshi Kamiya, Soichi Shirai, Mikio Asai, Nobuyuki Shirai, Yoshiyuki Takeuchi, Toshihiko Shima, Hiroaki Suzuki
  • Publication number: 20070046275
    Abstract: A capacitor is disposed between the output side and the ground potential of an inductor which creates an output voltage. A first switch element supplies a current from an input voltage to an input side of the inductor, and a second switch element which is turned on when the first switch element is off sets the input side of the inductor to a prescribed potential. A control circuit detects the arrival of the voltage on the input side of the inductor at a high voltage corresponding to the input voltage when the load circuit is in a light load state and the second switch element is off, and turns on the first switch element. It invalidates the detection output of the voltage detecting circuit when the load circuit is in a heavy load state and, after the second switch element is turned off, turns on the first switch element.
    Type: Application
    Filed: August 28, 2006
    Publication date: March 1, 2007
    Inventors: Nobuyuki Shirai, Ryotaro Kudo
  • Patent number: 7134638
    Abstract: A stop valve for a gas tank is provided which achieves favorable sealing performance by inhibiting rotation of a sealing member attached to a valve element. A passage is formed inside a valve body, and a valve seat is provided in the passage. The valve element which is engaged and disengaged from the valve seat is slidably inserted to a sliding hole bored in the valve body. The annular sealing member is arranged in sliding contact with the outer peripheral surface of the valve element and the inner peripheral surface of the sliding hole. A screw hole connecting to the sliding hole and coaxial thereto is provided in the valve body. A rotating operation member having a male screw is rotatably screwed into the screw hole from the outside of the valve body. One end of the rotating operation member is made to abut the valve body.
    Type: Grant
    Filed: January 21, 2005
    Date of Patent: November 14, 2006
    Assignees: Toyooki Kogyo Co., Ltd., Toyoda Koki Kabushiki Kaisha
    Inventors: Tadayoshi Kamiya, Soichi Shirai, Nobuyuki Shirai, Toshihiko Shima, Hiroaki Suzuki, Yoshiyuki Takeuchi
  • Publication number: 20060249806
    Abstract: To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact
    Type: Application
    Filed: July 10, 2006
    Publication date: November 9, 2006
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura, Yoshito Nakazawa
  • Patent number: 7078782
    Abstract: To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact
    Type: Grant
    Filed: September 24, 2004
    Date of Patent: July 18, 2006
    Assignee: Renesas Technology Corp.
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura, Yoshito Nakazawa
  • Publication number: 20050242393
    Abstract: A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
    Type: Application
    Filed: July 14, 2005
    Publication date: November 3, 2005
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura
  • Patent number: 6930354
    Abstract: A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
    Type: Grant
    Filed: August 11, 2004
    Date of Patent: August 16, 2005
    Assignee: Renesas Technology Corp.
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura
  • Publication number: 20050161627
    Abstract: A stop valve for a gas tank is provided which achieves favorable sealing performance by inhibiting rotation of a sealing member attached to a valve element. A passage is formed inside a valve body, and a valve seat is provided in the passage. The valve element which is engaged and disengaged from the valve seat is slidably inserted to a sliding hole bored in the valve body. The annular sealing member is arranged in sliding contact with the outer peripheral surface of the valve element and the inner peripheral surface of the sliding hole. A screw hole connecting to the sliding hole and coaxial thereto is provided in the valve body. A rotating operation member having a male screw is rotatably screwed into the screw hole from the outside of the valve body. One end of the rotating operation member is made to abut the valve body.
    Type: Application
    Filed: January 21, 2005
    Publication date: July 28, 2005
    Inventors: Tadayoshi Kamiya, Soichi Shirai, Nobuyuki Shirai, Toshihiko Shima, Hiroaki Suzuki, Yoshiyuki Takeuchi
  • Publication number: 20050035400
    Abstract: To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact
    Type: Application
    Filed: September 24, 2004
    Publication date: February 17, 2005
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura, Yoshito Nakazawa
  • Publication number: 20050012144
    Abstract: A semiconductor device includes agate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
    Type: Application
    Filed: August 11, 2004
    Publication date: January 20, 2005
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura
  • Patent number: 6806548
    Abstract: To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact
    Type: Grant
    Filed: October 15, 2002
    Date of Patent: October 19, 2004
    Assignee: Renesas Technology Corp.
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura, Yoshito Nakazawa
  • Publication number: 20040012049
    Abstract: A semiconductor device includes a gate electrode GE electrically connected to a gate portion which is made of a polysilicon film provided in the inside of a plurality of grooves formed in a striped form along the direction of T of a chip region CA wherein the gate electrode GE is formed as a film at the same layer level as a source electrode SE electrically connected to a source region formed between adjacent stripe-shaped grooves and the gate electrode GE is constituted of a gate electrode portion G1 formed along a periphery of the chip region CA and a gate finger portion G2 arranged so that the chip region CA is divided into halves along the direction of X. The source electrode SE is constituted of an upper portion and a lower portion, both relative to the gate finger portion G2, and the gate electrode GE and the source electrode SE are connected to a lead frame via a bump electrode.
    Type: Application
    Filed: June 11, 2003
    Publication date: January 22, 2004
    Applicant: Hitachi, Ltd.
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura
  • Publication number: 20030080355
    Abstract: To attain reduction in size of a semiconductor device having a power transistor and an SBD, a semiconductor device according to the present invention comprises a first region and a second region formed on a main surface of a semiconductor substrate; plural first conductors and plural second conductors formed in the first and second regions respectively; a first semiconductor region and a second semiconductor region formed between adjacent first conductors in the first region, the second semiconductor region lying in the first semiconductor region and having a conductivity type opposite to that of the first semiconductor region; a third semiconductor region formed between adjacent second conductors in the second region, the third semiconductor region having the same conductivity type as that of the second semiconductor region and being lower in density than the second semiconductor region; a metal formed on the semiconductor substrate in the second region, the third semiconductor region having a metal contact
    Type: Application
    Filed: October 15, 2002
    Publication date: May 1, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Nobuyuki Shirai, Nobuyoshi Matsuura, Yoshito Nakazawa