Abstract: A composition for forming a Ce-doped PZT-based piezoelectric film contains: PZT-based precursors containing metal atoms configuring the composite metal oxides; a diol; and polyvinylpyrrolidone. The PZT-based precursors are contained so that a metal atom ratio (Pb:Ce:Zr:Ti) in the composition satisfies (1.00 to 1.28):(0.005 to 0.05):(0.40 to 0.55):(0.60 to 0.45) and the total of Zr and Ti in a metal atom ratio is 1. A concentration of the PZT-based precursor in 100 mass % of the composition is from 17 mass % to 35 mass % in terms of an oxide concentration, a rate of diol in 100 mass % of the composition is from 16 mass % to 56 mass %, and a molar ratio of polyvinylpyrrolidone to 1 mole of the PZT-based precursor is 0.01 moles to 0.25 moles in terms of monomers.

Abstract: A Ce-doped PZT-based piezoelectric film is provided which is formed of Ce-doped composite metal oxides represented by a general formula: PbzCexZryTi1-yO3. x, y, and z in the general formula satisfy a relationship of 0.005?x?0.05, a relationship of 0.40?y?0.55, and a relationship of 0.95?z?1.15, respectively. It is preferable that the hysteresis of the polarization quantity of the Ce-doped PZT-based piezoelectric film be shifted from the center of the hysteresis to a negative side by 4 kV/cm or more.

Abstract: A method for forming a LaNiO3 thin film is provided, the method including: a step of forming a coating film by coating a substrate surface which is coated with a Pt electrode with a LaNiO3 thin film-forming liquid composition and drying the LaNiO3 thin film-forming liquid composition in a state where amounts of H2, H2O, and CO adsorbed on the substrate surface per 1 cm2 are 1.0×10?10 g or less, 2.7×10?10 g or less, and 4.2×10?10 g or less, respectively; a step of pre-baking the coating film; and a step of forming a LaNiO3 thin film by baking the pre-baked coating film.

Abstract: A dielectric-thin-film forming composition for forming a BST dielectric thin film, includes a liquid composition for forming a thin film which takes a form of a mixed composite metal oxide in which a composite oxide B including Cu (copper) is mixed into a composite metal oxide A expressed by a formula: Ba1-xSrxTiyO3 (wherein 0.2<x<0.6 and 0.9<y<1.1), the liquid composition is an organic metal compound solution in which a raw material for composing the composite metal oxide A and a raw material for composing the composite oxide B are dissolved in an organic solvent at a proportion having a metal atom ratio expressed by the formula shown above and a molar ratio between A and B in the range of 0.001?B/A<0.15.

Abstract: A Mn and Nb co-doped PZT-based piezoelectric film formed of Mn and Nb co-doped composite metal oxides is provided, in which a metal atom ratio (Pb:Mn:Nb:Zr:Ti) in the film satisfies (0.98 to 1.12):(0.002 to 0.056):(0.002 to 0.056):(0.40 to 0.60):(0.40 to 0.60), a rate of Mn is from 0.20 to 0.80 when the total of metal atom rates of Mn and Nb is 1, a rate of Zr is from 0.40 to 0.60 when the total of metal atom rates of Zr and Ti is 1, and the total rate of Zr and Ti is from 0.9300 to 0.9902 when the total of metal atom rates of Mn, Nb, Zr, and Ti is 1.

Abstract: Disclosed is a composition for ferroelectric thin film formation which is used in the formation of a ferroelectric thin film of one material selected from the group consisting of PLZT, PZT, and PT. The composition for ferroelectric thin film formation is a liquid composition for the formation of a thin film of a mixed composite metal oxide formed of a mixture of a composite metal oxide (A) represented by general formula (1): (PbxLay)(ZrzTi(1-z))O3 [wherein 0.9<x<1.3, 0?y<0.1, and 0?z<0.9 are satisfied] with a composite oxide (B) or a carboxylic acid (B) represented by general formula (2): CnH2n+1COOH [wherein 3?n?7 is satisfied]. The composite oxide (B) contains one or at least two elements selected from the group consisting of P (phosphorus), Si, Ce, and Bi and one or at least two elements selected from the group consisting of Sn, Sm, Nd, and Y (yttrium).

Abstract: A ferroelectric film a plurality of fired films is provided. Each of the plurality of fired films is made of metal oxide in a perovskite structure including Pb, Zr, and Ti, a total content of Li, Na, and K in the each of the plurality of fired films is 3 mass ppm or less, and the total content of Li, Na, and K on one surface of each of the plurality of fired films is 5 times or more of the total concentration of Li, Na, and K on other surface of each of the plurality of fired films.

Abstract: An LaNiO3 thin-film-forming composition contains an LaNiO3 precursor, an organic solvent and a stabilizer. Also, the mixture ratio of the LaNiO3 precursor relative to a total of 100% by mass of the LaNiO3 precursor, the organic solvent and the stabilizer is 1-20% by mass on an oxide basis. Further, the dispersion component (dD), the polarization component (dP), and the hydrogen bond component (dH) of the HSP value of the organic solvent fulfill the relations 14<dD<20, 3<dP<26, and d3<dH<30, respectively.

Abstract: A LaNiO3 thin film having extremely few voids is uniformly formed. Provided is a LaNiO3 thin film-forming composition for forming a LaNiO3 thin film. It includes: a LaNiO3 precursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofuran. The stabilizer includes ?-diketones, ?-ketones, ?-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, or polyvalent amines. The second organic solvent has a boiling point of 150° C. to 300° C. and a surface tension of 20 to 50 dyn/cm. The LaNiO3 precursor content is 1 to 20 mass % with respect to 100 mass % of the composition. The stabilizer content is 0 to 10 mol with respect to 1 mol of a total amount of the LaNiO3 precursors. The second organic solvent content is 5 to 20 mass % with respect to the composition.

Abstract: The method for manufacturing a PNbZT thin film of the present invention includes: a process of preparing a plurality of types of sol-gel solutions having different concentration ratio of zirconium and titanium (Zr/Ti) while satisfying the composition formula PbzNbxZryTi1-yO3 (0<x?0.05, 0.40?y?0.60, and 1.05?z?1.25); a process of laminating at least two layers of calcined films, in which the concentration ratio Zr/Ti are decreased in a stepwise manner, on a substrate by selecting a predetermined sol-gel solution from among the plurality of types of sol-gel solutions so as to allow the concentration ratio Zr/Ti to be decreased in a stepwise manner, and repeating the application of the sol-gel solutions onto the substrate and calcining the resultant at least two times; and a process of obtaining a single PNbZT thin film by simultaneously baking a plurality of the calcined films.

Abstract: A composition containing a precursor of a ferroelectric thin film, a solvent, and a reaction control substance, can form a ferroelectric thin film by temporary firing and permanent firing of a coating film. The composition contains the reaction control substance in such an amount that a Young's modulus of a film formed in a step of temporary firing at a temperature of 200° C. to 300° C. becomes equal to or less than 42 GPa, and a Young's modulus of a film formed in a step of permanent firing at a temperature of 400° C. to 500° C. becomes equal to or greater than 55 GPa. Thus a thin film having high crystallinity can be formed which substantially does not crack at the time of permanent firing even if the thickness of the coating film formed per single coating operation is increased.

Abstract: A residual stress in a PZT type ferroelectric film 12 formed on a substrate body 11 by a sol-gel process is ?14 MPa to ?31 MPa, and the ferroelectric film 12 is crystal oriented in a (100) plane.

Abstract: A PZT-based ferroelectric thin film is formed by coating a PZT-based ferroelectric thin film-forming composition on a lower electrode of a substrate one or two or more times, pre-baking the composition, and baking the composition to be crystallized, and this thin film includes PZT-based particles having an average particle size in a range of 500 nm to 3000 nm when measured on a surface of the thin film, in which heterogeneous fine particles having an average particle size of 20 nm or less, which are different from the PZT-based particles, are precipitated on a part or all of the grain boundaries on the surface of the thin film.

Abstract: To provide a ferrite thin film-forming composition material that is a composition material for forming a ferrite thin film by using the sol-gel method which can form a thin ferrite thin film having a uniform thickness and, furthermore, has excellent long-term storage stability, a method of forming a ferrite thin film using the above composition material, and a ferrite thin film formed by using the above method. A ferrite thin film-forming composition material is a composition material for forming a NiZn ferrite, CuZn ferrite, or NiCuZn ferrite thin film by using a sol-gel method, in which the composition material is formed by dissolving metallic raw materials in a solvent including acetonitrile, and the fraction of acetonitrile is 30 mass % to 60 mass % with respect to 100 mass % of the composition material.

Abstract: A method of preparing a ferroelectric thin film-forming composition, specifically, a method of preparing a PZT thin film-forming composition includes: a step of allowing composition precursor raw materials, which contain PZT precursor substances at a concentration of 23 to 38 mass % in terms of oxides in 100 mass % of the composition precursor raw materials, and a high-molecular compound to react with each other to obtain a PZT thin film-forming composition precursor; and a step of aging the PZT thin film-forming composition precursor at a temperature of 0 to 10° C. for at least 30 days.

Abstract: A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of a orientation controlling layer b coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

Abstract: When a ferroelectric thin film-forming sol-gel solution contains a PZT-based compound, a viscosity-adjusting macromolecular compound including polyvinylpyrrolidone, and an organic dopant including a formamide-based solvent, the PZT-based compound is included at 17 mass % or more in terms of an oxide, the molar ratio of the polyvinylpyrrolidone to the PZT-based compound is PZT-based compound:polyvinylpyrrolidone=1:0.1 to 0.5 in terms of a monomer, and the formamide-based solvent is included at 3 mass % to 13 mass % of the sol-gel solution, it is possible to form a thick layer by coating the sol-gel solution once, the production efficiency improves, and crack-free and dense film formation even after calcination and firing becomes possible.

Abstract: A PZT-based ferroelectric thin film formed on a lower electrode of a substrate having the lower electrode in which the crystal plane is oriented in a (111) axis direction, having an orientation controlling layer which is formed on the lower electrode and has a layer thickness in which a crystal orientation is controlled in a (111) plane preferentially in a range of 45 nm to 270 nm, and a film thickness adjusting layer which is formed on the orientation controlling layer and has the same crystal orientation as the crystal orientation of the orientation controlling layer, in which an interface is formed between the orientation controlling layer and the film thickness adjusting layer.

Abstract: Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of ?-diketones, ?-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, ?-hydroxy carboxylic acid, ?-hydroxy carbonyl derivatives, and hydrazone derivatives.

Abstract: A liquid composition is provided for forming a thin film in the form of a mixed composite metal oxide in which a composite oxide B containing copper (Cu) and a composite oxide C containing manganese (Mn) are mixed into a composite metal oxide A represented with the general formula: Ba1-xSrxTiyO3, wherein the molar ratio B/A of the composite oxide B to the composite metal oxide A is within the range of 0.002<B/A<0.05, and the molar ratio C/A of the composite oxide C to the composite metal oxide A is within the range of 0.002<C/A<0.03.