Abstract: Disclosed is provided a process for producing a bonded body by bonding a ceramic member made of a ceramic to a Cu member made of Cu or a Cu alloy, the process including: a laminating step of laminating the Cu member on a first surface side of the ceramic member via a brazing material containing Cu and a eutectic element which has a eutectic reaction with Cu, and via an active metal; and a heating step of heating the ceramic member and the Cu member which are laminated together.

Abstract: A power-module substrate including a circuit layer having a first aluminum layer bonded on one surface of a ceramic substrate and a first copper layer bonded on the first aluminum layer by solid-phase-diffusion bonding, and a metal layer having a second aluminum layer made from a same material as the first aluminum layer and bonded on the other surface of the ceramic substrate and a second copper layer made from a same material as the first copper layer and bonded on the second aluminum layer by solid-phase-diffusion bonding, in which a thickness t1 of the first copper layer is 1.7 mm to 5 mm, a sum of the thickness t1 of the first copper layer and a thickness t2 of the second copper layer is 7 mm or smaller, and a ratio t2/t1 is larger than 0 and 1.2 or smaller except for a range of 0.6 to 0.8.

Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.

Abstract: A bonding body includes: an aluminum member composed of aluminum; and a metal member composed of any one of copper, nickel, and silver, wherein the aluminum member and the metal member are bonded together. In a bonding interface between the aluminum member and the metal member, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member side in the bonding interface, and the Al—Ti—Si layer being disposed between the Ti layer and the aluminum member and containing Si which is solid-solubilized into Al3Ti. The Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti layer side; and a second Al—Ti—Si layer formed at the aluminum member side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.

Abstract: The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the Cu member and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic member and the Cu member.

Abstract: There is a provided a copper-ceramic bonded body in which a copper member formed of copper or a copper alloy and a ceramic member formed of nitride ceramic are bonded to each other, in which an active element oxide layer containing an active element and oxygen is formed at bonding interfaces between the copper member and the ceramic member, and a thickness t of the active element oxide layer is in a range of 5 nm to 220 nm.

Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.

Abstract: A power module substrate including an insulating substrate, a circuit layer formed on one surface of the insulating substrate, and a metal layer formed on the other surface of the insulating substrate, wherein the circuit layer is composed of copper or a copper alloy, one surface of this circuit layer functions as an installation surface on which an electronic component is installed, the metal layer is formed by bonding an aluminum sheet composed of aluminum or an aluminum alloy, a thickness t1 of the circuit layer is within a range of 0.1 mm?t1?0.6 mm, a thickness t2 of the metal layer is within a range of 0.5 mm?t2?6 mm, and the relationship between the thickness t1 of the circuit layer and the thickness t2 of the metal layer satisfies t1<t2.

Abstract: The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and an intermetallic compound layer which is positioned between the Cu member and the Cu—Sn layer and contains P and Ti, are formed at a bonded interface between the ceramic member and the Cu member.

Abstract: The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, in which Sn forms a solid solution with Cu, is formed at a bonded interface between the ceramic member and the Cu member, and intermetallic compounds containing P and Ti are dispersed in the Cu—Sn layer.

Abstract: Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.

Abstract: A Cu/ceramic bonded body according to the present invention is formed by bonding a copper member made of copper or a copper alloy and a ceramic member made of AlN or Al2O3 using a bonding material containing Ag and Ti, in which a Ti compound layer made of a Ti nitride or a Ti oxide is formed at a bonding interface between the copper member and the ceramic member, and Ag particles are dispersed in the Ti compound layer.

Abstract: A method of producing a bonded body is disclosed in which a ceramic member made of ceramics and a Cu member made of Cu or a Cu alloy are bonded to each other, the method including: a laminating step of laminating the ceramic member and the Cu member in a state where a Cu—P-based brazing filler material containing 3 mass % to 10 mass % of P and an active metal material are interposed therebetween; and a heating step of heating the ceramic member and the Cu member which are laminated.

Abstract: The bonded body of the present invention includes: a ceramic member made of ceramics; and a Cu member which is made of Cu or a Cu alloy and bonded to the ceramic member through a Cu—P—Sn-based brazing filler material and a Ti material, wherein a Cu—Sn layer, which is positioned close to the ceramic member and in which Sn forms a solid solution with Cu, and a Ti layer which is positioned between the Cu member and the Cu—Sn layer, are formed at a bonded interface between the ceramic member and the Cu member, a first intermetallic compound layer made of Cu and Ti is formed between the Cu member and the Ti layer, and a second intermetallic compound layer containing P is formed between the Cu—Sn layer and the Ti layer.

Abstract: A bonding body includes: an aluminum member composed of aluminum; and a metal member composed of any one of copper, nickel, and silver, wherein the aluminum member and the metal member are bonded together. In a bonding interface between the aluminum member and the metal member, a Ti layer and an Al—Ti—Si layer are formed, the Ti layer being disposed at the metal member side in the bonding interface, and the Al—Ti—Si layer being disposed between the Ti layer the aluminum member and containing Si which is solid-solubilized into Al3Ti. The Al—Ti—Si layer includes: a first Al—Ti—Si layer formed at the Ti layer side; and a second Al—Ti—Si layer formed at the aluminum member side and a Si concentration of which is lower than a Si concentration of the first Al—Ti—Si layer.

Abstract: A method for manufacturing a power module substrate includes a first lamination step of laminating a ceramic substrate and a copper sheet through an active metal material and a filler metal having a melting point of 660° C. or lower on one surface side of the ceramic substrate; a second lamination step of laminating the ceramic substrate and an aluminum sheet through a bonding material on the other surface side of the ceramic substrate; and a heating treatment step of heating the ceramic substrate, the copper sheet, and the aluminum sheet laminated together, and the ceramic substrate and the copper sheet, and the ceramic sheet and the aluminum sheet are bonded at the same time.

Abstract: The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t1 of the circuit layer and a thickness t2 of the second aluminum layer of the metal layer satisfy t1<t2.

Abstract: A method for manufacturing a power-module substrate includes a lamination step of laminating a ceramic member and a copper member through an active metal material and a filler metal having a melting point of 710° C. or lower, and a heating treatment step of heating the ceramic member and the copper member laminated together.

Abstract: The power module substrate includes a circuit layer that is formed on a first surface of a ceramic substrate, and a metal layer that is formed on a second surface of the ceramic substrate, in which the metal layer has a first aluminum layer that is bonded to the second surface of the ceramic substrate and a first copper layer that is bonded to the first aluminum layer by solid-phase diffusion bonding.

Abstract: A power module substrate according to the present invention is a power module substrate in which a copper sheet made of copper or a copper alloy is laminated and bonded onto a surface of a ceramic substrate (11), an oxide layer (31) is formed on the surface of the ceramic substrate (11) between the copper sheet and the ceramic substrate (11), and the thickness of a Ag—Cu eutectic structure layer (32) is set to 15 ?m or less.