Abstract: A heat-sink-attached-power module substrate (1) has a configuration such that either one of a metal layer (13) and a heat sink (31) is composed of aluminum or an aluminum alloy, and the other one of them is composed of copper or a copper alloy, the metal layer (13) and the heat sink (31) are bonded together by solid phase diffusion bonding, an intermetallic compound layer formed of copper and aluminum is formed in a bonding interface between the metal layer (13) and the heat sink (31), and an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer (13) composed of copper or a copper alloy and heat sink (31) composed of copper or a copper alloy in a layered form along the interface.

Abstract: A bonding structure of an aluminum member and a copper member includes: the aluminum member composed of aluminum or an aluminum alloy, and the copper member composed of copper or a copper alloy in which the aluminum member and the copper member are bonded together by solid phase diffusion bonding; an intermetallic compound layer that is made of copper and aluminum and is formed in a bonding interface between the aluminum member and the copper member; and an oxide dispersed in an interface between the copper member and the intermetallic compound layer in a layered form along the interface.

Abstract: This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate 11; a nitride layer 31 that is formed on the surface of the ceramic substrate 11 between the copper plate and the ceramic substrate 11; and an Ag—Cu eutectic structure layer 32 having a thickness of 15 ?m or less that is formed between the nitride layer and the copper plate.

Abstract: A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

Abstract: A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.

Abstract: A power module substrate including an insulating substrate, a circuit layer formed on one surface of the insulating substrate, and a metal layer formed on the other surface of the insulating substrate, wherein the circuit layer is composed of copper or a copper alloy, one surface of this circuit layer functions as an installation surface on which an electronic component is installed, the metal layer is formed by bonding an aluminum sheet composed of aluminum or an aluminum alloy, a thickness t1 of the circuit layer is within a range of 0.1 mm?t1?0.6 mm, a thickness t2 of the metal layer is within a range of 0.5 mm?t2?6 mm, and the relationship between the thickness t1 of the circuit layer and the thickness t2 of the metal layer satisfies t1<t2.

Abstract: A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

Abstract: Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.