Abstract: The invention relates to a process for the preparation of trichlorosilane (HSiCl3) which comprises the reaction of tetrachlorosilane (SiCU) with hydridosilanes in the presence of a catalyst.

Abstract: The invention relates to a process for the stepwise synthesis of silahydrocarbons bearing up to four different organyl substituents at the silicon atom, wherein the process includes at least one step a) of producing a bifunctional hydridochlorosilane by a redistribution reaction, selective chlorination of hydridosilanes with an ether/HCl reagent, or by selective chlorination of hydridosilanes with SiCl4, at least one step b) of submitting a bifunctional hydridochloromonosilane to a hydrosilylation reaction, at least one step c) of hydrogenation of a chloromonosilane, and a step d) in which a silahydrocarbon compound is obtained in a hydrosilylation reaction.

Abstract: The present invention relates to an integrated process for the manufacture of methylchlorohydridomonosilanes in particular, from products of the Müller-Rochow Direct Process.

Abstract: The invention relates to a process for the manufacture of organomonosilanes bearing both hydrogen and chlorine substituents at the silicon atom by subjecting a silane substrate comprising one or more silanes selected from organomonosilanes, organodisilanes and organocarbodisilanes, with the proviso that at least one of these silanes has at least one chlorine substituent at the silicon atom, to a redistribution reaction in the presence of a phosphane or amine acting as a redistribution catalyst.

Abstract: The invention relates to a process for the production of monosilanes of formula H4-nSiCln with n being 2, 3 or 4 comprising the step of subjecting a starting material composition comprising one or more disilanes with formula HxSi2Cl6-x containing at least one Si—H bond and optionally further silanes, in particular the side-product mixture of the Siemens Process or fractions thereof, to a reaction with a reaction-promoting agent chosen from—ether/HCI solutions—amines, phosphines, or mixtures thereof—ammonium halides, phosphonium halides, or mixtures thereof at temperatures below 200° C.

Abstract: The invention relates to a method for cleaving silicon-silicon bindings and/or silicon-chlorine bindings in monosilanes, polysilanes, and/or oligosilanes. According to the invention, the monosilane, polysilane, and/or oligosilane is dissolved or suspended in an ether or in an ether-hydrochloric acid solution. Said method is used for example for preparing halogenated oligosilanes from halogenated polysilanes and for preparing siloxanes from organochlorosilanes and chlorinated monosilanes. Said method is particularly simple to carry out and as a result is economical.

Abstract: The invention relates to a process for the preparation of trichlorosilane (HSiCl3) which comprises the reaction of tetrachlorosilane (SiCU) with hydridosilanes in the presence of a catalyst.

Abstract: The invention relates to a process for the manufacture of organomonosilanes, in particular, bearing both hydrogen and chlorine substituents at the silicon atom by subjecting a silane substrate comprising one or more organomonosilanes, with the proviso that at least one of these silanes has at least one chlorine substituent at the silicon atom, to the reaction with one or more metal hydrides selected from the group of an alkali metal hydride and an alkaline earth metal hydride in the presence of one or more compounds (C) acting as a redistribution catalyst.

Abstract: The invention relates to a process for the manufacture of organomonosilanes, in particular, bearing both hydrogen and chlorine substituents at the silicon atom by subjecting a silane substrate comprising one or more organomonosilanes, with the proviso that at least one of these silanes has at least one chlorine substituent at the silicon atom, to the reaction with one or more metal hydrides selected from the group of an alkali metal hydride and an alkaline earth metal hydride in the presence of one or more compounds (C) acting as a redistribution catalyst.

Abstract: The present invention relates to an integrated process for the manufacture of methylchlorohydridomonosilanes in particular, from products of the Müller-Rochow Direct Process.

Abstract: The invention relates to a process for the manufacture of organomonosilanes bearing both hydrogen and chlorine substituents at the silicon atom by subjecting a silane substrate comprising one or more silanes selected from organomonosilanes, organodisilanes and organocarbodisilanes, with the proviso that at least one of these silanes has at least one chlorine substituent at the silicon atom, to a redistribution reaction in the presence of a phosphane or amine acting as a redistribution catalyst.

Abstract: The invention relates to a method for the plasma-assisted synthesis of organohalosilanes in which organohalosilanes of the general empirical formula R1mR2oSiX4-p (X=F, Cl, Br or I; p=1-4; p=m+o; m=1-4; o=0-3; R1, R2=alkyl, alkenyl, alkinyl, aryl) and/or carbosilanes of the general empirical formula R3qSiX3-qCH2SiR4rX3-r (X=F, Cl, Br or I; q=0-3; r=0-3; R3, R4=alkyl, alkenyl, alkinyl, aryl) are formed by activating a plasma in a mixture of one or more volatile organic compounds from the group of alkanes, alkenes, alkines and aromates with SiX4 and/or organohalosilanes RnSiX4-n (X=F, Cl, Br oder I; n=1-4; R=alkyl, alkenyl, alkinyl, aryl).

Abstract: The present invention relates to a process for preparing chlorinated oligosilanes, wherein chlorinated polysilane having an empirical formula of SiCl1.0-2.8 and/or a mixture comprising the chlorinated polysilane is reacted with elemental chlorine or a chlorine-containing mixture. Additionally claimed are chlorinated oligosilanes prepared by the process and the use thereof for production of semiconductors and/or hard coatings.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.

Abstract: The invention relates to a method for cleaving silicon-silicon bindings and/or silicon-chlorine bindings in monosilanes, polysilanes, and/or oligosilanes. According to the invention, the monosilane, polysilane, and/or oligosilane is dissolved or suspended in an ether or in an ether-hydrochloric acid solution. Said method is used for example for preparing halogenated oligosilanes from halogenated polysilanes and for preparing siloxanes from organochlorosilanes and chlorinated monosilanes. Said method is particularly simple to carry out and as a result is economical.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1.

Abstract: The present invention relates to a process for the preparation of linear, cyclic and/or cage-type perhalogenated oligosilyl and polysilyl anions by reacting perhalogenated monosilanes, oligosilanes or polysilanes with organosubstituted ammonium and/or phosphonium halides at temperatures ranging from ?80° C. to 85° C., preferably ?80° C. to 60° C., and to oligosilyl and polysilyl anions prepared according to that process.

Abstract: A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiXn, where X is halogen, which may be partially replaced by hydrogen, and where 1<n<2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).

Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Abstract: The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.