Abstract: A chlorinated polysilane has the formula SiClx wherein x=0.01?0.8 and which can be produced by thermolysis of a chloropolysilane at a temperature below 600° C.

Abstract: A process for preparing hydrogenated polygermasilane as a pure compound or mixture of compounds includes hydrogenating halogenated polygermasilane.

Abstract: Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C-SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C-SiC and amorphous SiC or halogen-containing nanocrystalline 3C-SiC and amorphous carbon.

Abstract: The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.

Abstract: The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SinH2n and/or SinH2n+2 of which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of plasmachemically generated largely chlorinated polysilane mixtures. These mixtures of polysilanes are especially suited to be applied onto surfaces as solutions or dispersions and to obtain silicon-based structures or layers in subsequent process steps. Furthermore, they are especially safe in handling and can be additionally made up into transport forms in suitable transport containers.

Abstract: The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.

Abstract: A method for producing ammonia includes reacting SiO2 and/or Al2O3, or material containing SiO2 and/or Al2O3, with addition of a carbon source, with gaseous nitrogen at elevated temperature to give silicon nitride (Si3N4) and/or aluminum nitride (AlN), or material containing silicon nitride and/or aluminum nitride, and reacting resultant silicon nitride and/or aluminum nitride, or material containing silicon nitride and/or aluminum nitride, in the presence of a basic alkali metal compound and/or alkaline earth metal compound, with water at elevated temperature to give ammonia and alkali metal silicates and/or alkaline earth metal silicates.

Abstract: A solution is to be created, with a method and a device for generating hydrogen, in which silicon and/or an alloy that contains silicon is reacted in a reaction vessel (1), with an alkaline solution as a catalyst, so that the process, after starting, runs continuously and catalytically in the presence of silicon dioxide as a nucleating agent, without further addition of lye and without using higher pressures and temperatures (hydrothermal conditions). This is achieved in that the alkaline solution is used in a strongly sub-stoichiometric amount with reference to the entire reaction, whereby the silicon dioxide that is formed is precipitated onto crystallization nuclei.

Abstract: The invention relates to silicon containing halogenide obtained by thermal disintegration of halogenized polysilane, and a method for producing the silicon. The silicon has a halogenide content of 1 at %-50 at %. The invention further relates to the use of the silicon containing halogenide for purifying metallurgical silicon.

Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1.

Abstract: A solution is to be created, with a method and a device for generating hydrogen, in which silicon and/or an alloy that contains silicon is reacted in a reaction vessel (1), with an alkaline solution as a catalyst, so that the process, after starting, runs continuously and catalytically in the presence of silicon dioxide as a nucleating agent, without further addition of lye and without using higher pressures and temperatures (hydrothermal conditions). This is achieved in that the alkaline solution is used in a strongly sub-stoichiometric amount with reference to the entire reaction, whereby the silicon dioxide that is formed is precipitated onto crystallization nuclei.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.

Abstract: The invention relates to a method for the plasma-assisted synthesis of organohalosilanes in which organohalosilanes of the general empirical formula R1mR2oSiX4-p (X=F, Cl3, Br or I; p=1-4; p=m+o; m=1-4; o=0-3; R1, R2=alkyl, alkenyl, alkinyl, aryl) and/or carbosilanes of the general empirical formula R3qSiX3-qCH2SiR4rX3-r (X=F, Cl, Br or I; q=0-3; r=0-3; R3, R4=alkyl, alkenyl, alkinyl, aryl) are formed by activating a plasma in a mixture of one or more volatile organic compounds from the group of alkanes, alkenes, alkines and aromates with SiX4 and/or organohalosilanes RnSiX4-n (X=F, Cl, Br oder I; n=1-4; R=alkyl, alkenyl, alkinyl, aryl).

Abstract: The invention is based on the aim of developing a device and a method for the plasma-enhanced synthesis of halogenated polysilanes and polygermanes, wherein at least one reaction partner is present in a gaseous form and is excited by reactive particles from a plasma zone, and is subsequently reacted by means of at least one further reaction partner which is present in the reaction chamber in vaporous or gaseous form. Reactions of halogen silanes or germanes of the group SiCl4, SiF4, GeCl4, GeF4 with H2 are possible.

Abstract: A solution is to be created, with a method and a device for generating hydrogen, in which silicon and/or an alloy that contains silicon is reacted in a reaction vessel (1), with an alkaline solution as a catalyst, so that the process, after starting, runs continuously and catalytically in the presence of silicon dioxide as a nucleating agent, without further addition of lye and without using higher pressures and temperatures (hydrothermal conditions). This is achieved in that the alkaline solution is used in a strongly sub-stoichiometric amount with reference to the entire reaction, whereby the silicon dioxide that is formed is precipitated onto crystallization nuclei.

Abstract: The invention is directed to mixtures of polysilanes macroscopically solid at ambient temperature wherein the individual components of the composition SinH2n and/or SinH2n+2 of which decompose before they are boiling at an applied process pressure and which are produced from the hydrogenation of plasmachemically generated largely chlorinated polysilane mixtures. These mixtures of polysilanes are especially suited to be applied onto surfaces as solutions or dispersions and to obtain silicon-based structures or layers in subsequent process steps. Furthermore, they are especially safe in handling and can be additionally made up into transport forms in suitable transport containers.

Abstract: The invention relates to a process for preparing hydrogen. According to the invention, monosilane or polysilane is converted to hydrogen at an elevated temperature with steam or oxygen.

Abstract: The present invention relates to a method for the production of silicon from silyl halides. In a first step, the silyl halide is converted, with the generation of a plasma discharge, to a halogenated polysilane, which is subsequently decomposed to silicon, in a second step, with heating.

Abstract: Element halides are prepared in high yield by contacting an element or compound thereof and carbon or a carbon source with a gas stream containing a halogen or halogen compound in the gaseous state, and heating by means of an alternating magnetic field.