Abstract: Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

Abstract: Provided is a thermistor which has a smaller change in resistance value between before and after a heat resistance test and from which a high B constant is obtained, a method for manufacturing the same, and a thermistor sensor. The thermistor is a thermistor formed on a substrate and includes: an intermediate stacked portion formed on the substrate; and a main metal nitride film layer formed of a thermistor material of a metal nitride on the intermediate stacked portion, wherein the intermediate stacked portion includes a base thermistor layer formed of a thermistor material of a metal nitride and an intermediate oxynitride layer formed on the base thermistor layer, the main metal nitride film layer is formed on the intermediate oxynitride layer, and the intermediate oxynitride layer is a metal oxynitride layer formed through oxidation of the thermistor material of the base thermistor layer immediately below the intermediate oxynitride layer.

Abstract: Provided are a thermistor which can have a satisfactory thermistor film using a metal substrate as well as a high humidity resistance and heat resistance; a method for producing the same; and a thermistor sensor. The thermistor according to the present invention includes a metal substrate 2, an insulating base film 3 formed on the metal substrate, and a thermistor film 4 formed on the insulating base film, wherein the insulating base film is formed so as to fill the irregularities on the surface of the metal substrate where the surface roughness of the insulating base film is lower than that of the metal substrate. In the method for producing this thermistor includes the steps of: applying polysilazane on the metal substrate; drying the polysilazane to form the insulating base film of SiOx containing nitrogen; and depositing the thermistor film on the insulating base film.

Abstract: A temperature sensor having excellent humidity resistance and responsivity is provided. The temperature sensor according to the present invention includes an insulating substrate 2; a thin film thermistor portion 3 made of a thermistor material formed on either surface of the insulating substrate; and an opposed electrode pair 5 consisting of a pair of opposed electrodes 4 formed so as to be opposed to each other on at least either one of the top and bottom surfaces of the thin film thermistor portion, wherein a plurality of the opposed electrode pairs are provided and connected to one another in series. As a result, a voltage applied to a unit thermistor composed of one opposed electrode pair becomes 1/n fold, which can suppress the electrode corrosion due to humidity load.

Abstract: A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Mx(Al1-vSiv)y(N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, 0.0<v<0.3, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al—Si alloy sputtering target (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co).

Abstract: A temperature sensor having excellent humidity resistance and responsivity is provided. The temperature sensor according to the present invention includes an insulating substrate 2; a thin film thermistor portion 3 made of a thermistor material formed on either surface of the insulating substrate; and an opposed electrode pair 5 consisting of a pair of opposed electrodes 4 formed so as to be opposed to each other on at least either one of the top and bottom surfaces of the thin film thermistor portion, wherein a plurality of the opposed electrode pairs are provided and connected to one another in series. As a result, a voltage applied to a unit thermistor composed of one opposed electrode pair becomes 1/n fold, which can suppress the electrode corrosion due to humidity load.

Abstract: Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti—Al—N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.

Abstract: A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: MxAly(N1-wOw)z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).

Abstract: A temperature sensor comprises: a pair of lead frames; a sensor portion connected to the lead frames; and an insulating holding part holding the lead frames, wherein the sensor portion comprises: an insulating film having the lead frames bonded on an upper surface; a thermistor portion provided to the insulating film; a pair of electrodes formed on the thermistor portion; a pair of pattern electrodes patterned in the upper surface of the insulating film; and a pair of insulating protective tapes bonded to each other to hold the lead frames and the sensor in a vertical direction, wherein both sides of the insulating film are arranged in the vicinity of and inside outer corners on bonding surface sides of the lead frames, and both sides of the protective tapes are bent outward from both sides of the insulating film toward an upper surface side.

Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.

Abstract: Provided is a temperature sensor which does not easily cause a crack in a Ti—Al—N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film 2, a thin film thermistor portion 3 made of a Ti—Al—N-based thermistor material formed on the insulating film, a pair of pattern electrodes 4 formed on the insulating film with a pair of opposed electrode portions 4a being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti1-wCrw)xAlyNz (where 0.0<w<1.0, 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrxAlyNz (0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a Cr—Al alloy sputtering target.

Abstract: The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti1-vCrv)xAly (N1-wOw)z (where 0.0<v<1.0, 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.

Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: VxAly(N1-wOw)z (where 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrxAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.