Abstract: Provided is a battery with a temperature control function capable of accurately measuring the temperature of a battery to control its heating. The battery with a temperature control function includes a battery body, and a film heater with a temperature sensor arranged so as to cover at least a part of the surface of the battery body. The film heater with a temperature sensor includes an insulating film, a temperature sensor portion formed on the insulating film, and a heater wire formed thereon through the insulating layer. The heater wire is patterned on the insulating layer. The temperature sensor portion has the thin film thermistor portion made of a thermistor material patterned directly under the heating region of the heater wire and on the insulating film, and a pair pattern electrodes formed on at least the thin film thermistor portion.

Abstract: Provided are a metal nitride film for a thermistor, which has an excellent bending resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride film for a thermistor, which consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and the peak ratio of the diffraction peak intensity of a-axis orientation (100) relative to the diffraction peak intensity of c-axis orientation (002) (i.e., the diffraction peak intensity of a-axis orientation (100)/the diffraction peak intensity of c-axis orientation (002)) is 0.1 or lower in X-ray diffraction.

Abstract: Provided is a temperature sensor which does not easily cause a crack in a Ti—Al—N-based thermistor material layer when the film is bent, can be directly deposited on a film or the like without firing, and has a high reliability with a high heat resistance. The temperature sensor includes an insulating film 2, a thin film thermistor portion 3 made of a Ti—Al—N-based thermistor material formed on the insulating film, a pair of pattern electrodes 4 formed on the insulating film with a pair of opposed electrode portions 4a being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the pair of opposed electrode portions covers the entire surface of thin film thermistor portion excluding the region between the opposed electrode portions.

Abstract: Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti—Al—N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer.

Abstract: Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly(N1-wOw)z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-wAw)xAlyNz (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<w<1.0, 0.70?y/(x+y)?0.98, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided is a film-type thermistor sensor which can be surface-mounted and can be directly deposited on a film or the like without baking. The film-type thermistor sensor includes an insulating film; a thin-film thermistor part formed on the front side of the insulating film; the pair of front side pattern electrodes in which a pair of counter electrode parts facing each other is disposed above or below the thin-film thermistor part and is formed on the front side of the insulating film; and a pair of back side pattern electrodes formed on the back side of the insulating film in such a manner as to face a part of the pair of front side pattern electrodes, wherein the front side pattern electrodes and the back side pattern electrodes are electrically connected via via-holes formed so as to penetrate the insulating film.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly (N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-wAw)xAlyNz (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<w<1.0, 0.70?y/(x+y)?0.98, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAlyNz (where 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which exhibits high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the metal nitride material for a thermistor, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: TixAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), and the crystal structure thereof is a hexagonal wurtzite-type single phase.