Abstract: Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1?vVv)xAly(N1?wOw)z (where 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and “M” is one or two elements selected from Ti and Cr. The method includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-V—Al alloy sputtering target, wherein “M” is one or two elements selected from Ti and Cr.

Abstract: The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vAv)xAly(N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one of Sc, Zr, Mo, Nb, and W, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1?vAv)xAly(N1?wOw)z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: A temperature sensor is provided that includes a pair of lead frames; a sensor portion connected to the pair of lead frames; and an insulating holding portion fixed to the pair of lead frames for holding the same. The sensor portion includes an insulating film, a thin film thermistor portion patterned on a surface of the insulating film, a pair of comb shaped electrodes having a plurality of comb portions on the thin film thermistor portion and being patterned, and a pair of pattern electrodes patterned on the surface of the insulating film with one end thereof being connected to the pair of comb shaped electrodes and the other end thereof being connected to the pair of lead frames. The lead frame has a main lead portion and a base-end-side bonding portion. Only one of the pair of lead frames has a front-end-side bonding portion.

Abstract: Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion includes an insulating film having a strip shape, a thin film thermistor portion pattern-formed at the center portion of the surface of the insulating film, a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on at least one of the top or the bottom of the thin film thermistor portion with facing each other and a pair of pattern electrodes, of which one end is connected to the pair of comb electrodes and the other end is connected to the pair of lead frames at both ends of the insulating film, pattern-formed on the surface of the insulating film.

Abstract: A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Mx(Al1-vSiv)y(N1-wOw)z (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, 0.0<v<0.3, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al—Si alloy sputtering target (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co).

Abstract: A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: Mx(Al1-wSiw)yNz (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co, 0.0<w<0.3, 0.70?y/(x+y)?0.98, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using an M-Al—Si alloy sputtering target (where “M” represents at least one of Ti, V, Cr, Mn, Fe, and Co).

Abstract: A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: MxAly(N1-wOw)z (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).

Abstract: A metal nitride material for a thermistor consists of a metal nitride represented by the general formula: MxAlyNz (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni, 0.70?y/(x+y)?0.98, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. A method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using an M-Al alloy sputtering target (where “M” represents at least one of Fe, Co, Mn, Cu, and Ni).

Abstract: Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: VxAly(N1-wOw)z (where 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using a V—Al alloy sputtering target.

Abstract: Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1-vVv)xAly(N1-wOw)z (where 0.0<v<1.0, 0.70?y/(x+y)?0.98, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase, and “M” is one or two elements selected from Ti and Cr. The method includes a deposition step of performing film deposition by reactive sputtering in a nitrogen and oxygen-containing atmosphere using an M-V—Al alloy sputtering target, wherein “M” is one or two elements selected from Ti and Cr.

Abstract: Provided are a metal nitride material for a thermistor, which has a high heat resistance and a high reliability and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: VxAlyNz (where 0.70?y/(x+y)?0.98, 0.4?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a V—Al alloy sputtering target.

Abstract: Provided is a temperature sensor that includes a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti1-vCrv)xAly (N1-wOw)z (where 0.0<v<1.0, 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrxAly(N1-wOw)z (where 0.70?y/(x+y)?0.95, 0.45?z?0.55, 0<w?0.35, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: CrxAlyNz (0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase. The method for producing the metal nitride material for a thermistor includes a deposition step of performing film deposition by reactive sputtering in a nitrogen-containing atmosphere using a Cr—Al alloy sputtering target.

Abstract: Provided are a metal nitride material for a thermistor, which has a high reliability and a high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor. The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (Ti1-wCrw)xAlyNz (where 0.0<w<1.0, 0.70?y/(x+y)?0.95, 0.4?z?0.5, and x+y+z=1), wherein the crystal structure thereof is a hexagonal wurtzite-type single phase.

Abstract: Provided is a gas flow sensor that includes a heat-sensitive element for measurement disposed inside a duct through which a gas to be measured flows and a support mechanism for supporting the heat-sensitive element for measurement inside the duct. The heat-sensitive element for measurement includes an insulating film; a thin film thermistor portion formed on the surface of the insulating film with a thermistor material; a pair of comb electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and a pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of comb electrodes. The support mechanism is disposed such that the planar direction of the insulating film is parallel to the direction of gas flow in the duct.

Abstract: The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.

Abstract: The temperature sensor is provided with a pair of lead frames, a sensor portion connected to the pair of lead frames, and an insulating holding portion which is fixed to the pair of lead frames and holds the lead frames. The sensor portion is provided with an insulating film; a thin film thermistor portion formed as a pattern on the surface of the insulating film with a thermistor material; a pair of interdigitated electrodes formed as patterns having multiple comb portions and facing each other on the thin film thermistor portion; and a pair of pattern electrodes connected to the pair of interdigitated electrodes and formed as patterns on the surface of the insulating film. The pair of lead frames is extended and adhered to the surface of the insulating film disposing the thin film thermistor portion therebetween and is connected to the pair of pattern electrodes.