Abstract: A control device configured to control a vehicle is provided. The device comprises: a traveling control unit capable of executing stop hold control in an automatic brake hold function and a one-pedal function; and an output control unit capable of displaying a first indicator indicating that the one-pedal function is enabled and a second indicator indicating that the automatic brake hold function is enabled. The traveling control unit exclusively executes the automatic brake hold function and the one-pedal function. The output control unit executes at least one of ending display of the second indicator and displaying the first indicator when the one-pedal function is enabled instead of the automatic brake hold function and/or ending display of the first indicator and displaying the second indicator when the automatic brake hold function is enabled instead of the one-pedal function.

Abstract: A control apparatus for controlling a vehicle includes a travel controlling unit for executing a one-pedal function for controlling both a driving force and a braking force of the vehicle according to an operation amount of an accelerator pedal, and an output controlling unit capable of displaying, on a display device of the vehicle, a first indicator indicating that the one-pedal function is enabled and a second indicator indicating that a stopped state of the vehicle is being held by a braking force of the one-pedal function.

Abstract: A MOSFET includes: a semiconductor base substrate having n-type column regions and p-type column regions, the n-type column regions and the p-type column regions forming a super junction structure; and a gate electrode which is formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein crystal defects whose density is increased locally as viewed along a depth direction are formed in the n-type column regions and the p-type column regions, using the first main surface as a reference and assuming a depth to a deepest portion of the super junction structure as Dp, a depth at which density of the crystal defects exhibits a maximum value as Dd, and a half value width of density distribution of the crystal defects as W, a relationship of 0.25Dp?Dd<0.95Dp and a relationship of 0.05Dp<W<0.5Dp are satisfied.

Abstract: A MOSFET includes: a semiconductor base substrate having an n-type column region and a p-type column region, the n-type column region and the p-type column region forming a super junction structure; and a gate electrode formed by way of a gate insulation film. Assuming a region of the semiconductor base substrate which provides a main operation of the MOSFET as an active region, a region of the semiconductor base substrate maintaining a withstand voltage of the MOSFET as an outer peripheral region, and a region of the semiconductor base substrate disposed between the active region and the outer peripheral region as an active connecting region, out of the active region, the active connecting region, and the outer peripheral region of the semiconductor base substrate, the crystal defects are formed only in the active region and the active connecting region.

Abstract: A control device configured to control a vehicle is provided. The device comprises a traveling control unit capable of executing a one-pedal function of controlling both a driving force and a braking force of the vehicle in accordance with an operation amount of an accelerator pedal, and an output control unit of notifying a driver of an instruction to depress a brake pedal in a case in which a seatbelt is detached during execution of the one-pedal function and during traveling of the vehicle, and the vehicle stops in that state.

Abstract: A control device configured to control a vehicle is provided. The device comprises: a traveling control unit capable of executing stop hold control in an automatic brake hold function and a one-pedal function; and an output control unit capable of displaying a first indicator indicating that the one-pedal function is enabled and a second indicator indicating that the automatic brake hold function is enabled. The traveling control unit exclusively executes the automatic brake hold function and the one-pedal function. The output control unit executes at least one of ending display of the second indicator and displaying the first indicator when the one-pedal function is enabled instead of the automatic brake hold function and/or ending display of the first indicator and displaying the second indicator when the automatic brake hold function is enabled instead of the one-pedal function.

Abstract: A control device configured to control a vehicle is provided. The device comprises a traveling control unit configured to set an effect degree of a braking force to be given to the vehicle, and an output control unit capable of displaying, on a display device of the vehicle, an indicator representing an upper limit of a settable level of the effect degree.

Abstract: A MOSFET includes: a semiconductor base substrate having n-type column regions and p-type column regions, the n-type column regions and the p-type column regions forming a super junction structure; and a gate electrode which is formed on a first main surface side of the semiconductor base substrate by way of a gate insulation film, wherein crystal defects whose density is increased locally as viewed along a depth direction are formed in the n-type column regions and the p-type column regions, using the first main surface as a reference and assuming a depth to a deepest portion of the super junction structure as Dp, a depth at which density of the crystal defects exhibits a maximum value as Dd, and a half value width of density distribution of the crystal defects as W, a relationship of 0.25Dp?Dd<0.95Dp and a relationship of 0.05Dp<W<0.5Dp are satisfied.

Abstract: A power semiconductor device of the present invention includes: a semiconductor base body which has a super junction structure formed of a plurality of first conductive-type columnar regions and a plurality of second conductive-type columnar regions; a plurality of trenches; gate insulation films; gate electrodes; an interlayer insulation film; contact holes formed such that two or more contact holes are formed between two trenches disposed adjacently to each other; metal plugs formed by filling the inside of the contact holes with metal; and an electrode, wherein a first conductive-type high concentration diffusion region is formed only between the trench and the metal plug disposed closest to the trench between each two trenches disposed adjacently to each other. According to the power semiconductor device of the present invention, it is possible to provide a power semiconductor device which satisfies a demand for reduction in cost and downsizing of electronic equipment, and has a large breakdown strength.

Abstract: A power semiconductor device according to the present invention has a super junction structure, and includes a low-resistance semiconductor layer, an n?-type column region, p?-type column regions, a base region, trenches, gate insulation films, gate electrodes, source regions, interlayer insulation films, contact holes, metal plugs, p+-type diffusion regions, a source electrode and a gate pad electrode. An active element part includes an n?-type column region between a predetermined p?-type column region disposed closest to a gate pad part and a predetermined n?-type column region disposed closest to the gate pad part among the n?-type column regions which are in contact with the trenches. The present invention provides a power semiconductor device which can satisfy a demand for reduction in cost and downsizing of electronic equipment, can lower ON resistance while maintaining a high withstand voltage, and can possess a large breakdown resistance.

Abstract: A semiconductor device includes: a semiconductor base body where a second semiconductor layer is stacked on a first semiconductor layer, a trench is formed on a surface of the second semiconductor layer, and a third semiconductor layer which is formed of an epitaxial layer is formed in the inside of the trench; a first electrode; an interlayer insulation film which has a predetermined opening; and a second electrode, wherein metal is filled in the opening, the opening is disposed at a position avoiding a center portion of the third semiconductor layer, the second electrode is connected to the third semiconductor layer through the metal, and a surface of the center portion of the third semiconductor layer is covered by the interlayer insulation film.

Abstract: A semiconductor device includes: a semiconductor base body where a second semiconductor layer is stacked on a first semiconductor layer, a trench is formed on a surface of the second semiconductor layer, and a third semiconductor layer which is formed of an epitaxial layer is formed in the inside of the trench; a first electrode; an interlayer insulation film which has a predetermined opening; and a second electrode, wherein metal is filled in the opening, the opening is disposed at a position avoiding a center portion of the third semiconductor layer, the second electrode is connected to the third semiconductor layer through the metal, and a surface of the center portion of the third semiconductor layer is covered by the interlayer insulation film.

Abstract: A power semiconductor device according to the present invention has a super junction structure, and includes a low-resistance semiconductor layer, an n?-type column region, p?-type column regions, a base region, trenches, gate insulation films, gate electrodes, source regions, interlayer insulation films, contact holes, metal plugs, p+-type diffusion regions, a source electrode and a gate pad electrode. An active element part includes an n?-type column region between a predetermined p?-type column region disposed closest to a gate pad part and a predetermined n?-type column region disposed closest to the gate pad part among the n?-type column regions which are in contact with the trenches. The present invention provides a power semiconductor device which can satisfy a demand for reduction in cost and downsizing of electronic equipment, can lower ON resistance while maintaining a high withstand voltage, and can possess a large breakdown resistance.

Abstract: A power semiconductor device of the present invention includes: a semiconductor base body which has a super junction structure formed of a plurality of first conductive-type columnar regions and a plurality of second conductive-type columnar regions; a plurality of trenches; gate insulation films; gate electrodes; an interlayer insulation film; contact holes formed such that two or more contact holes are formed between two trenches disposed adjacently to each other; metal plugs formed by filling the inside of the contact holes with metal; and an electrode, wherein a first conductive-type high concentration diffusion region is formed only between the trench and the metal plug disposed closest to the trench between each two trenches disposed adjacently to each other. According to the power semiconductor device of the present invention, it is possible to provide a power semiconductor device which satisfies a demand for reduction in cost and downsizing of electronic equipment, and has a large breakdown strength.

Abstract: A running control device changes the distribution of engine braking or regenerative braking and the distribution of friction braking in the entire requested braking force according to an operation amount of an operation element, according to whether the behavior of a vehicle during running is in a stable state or an unstable state, or becomes an unstable state in the near future with high probability.

Abstract: The system is provided with a controller that controls the acceleration and deceleration of the vehicle according to the operation quantity of an accelerator pedal, and a state detector that determines whether a wheel is in a slippery state. The controller sets a deceleration region corresponding to a relatively small amount of operation and an acceleration region corresponding to a relatively large operation quantity regarding the operation quantity, and controls such that, in at least partially, the deceleration of the vehicle is increased as the operation quantity decreases, while in at least a part of the acceleration region, the acceleration of the vehicle is increased as the operation quantity increases. When the state detector detects a slippery state, the controller decreases the maximum deceleration that can be produced in the deceleration region.

Abstract: A video encoding device includes: an encoding parameter search unit for receiving input video and outputting an encoding parameter; an encoder for receiving the input video and the encoding parameter and performing encoding; a code amount control unit for deciding a block size enlargement parameter indicating at least a degree of enlargement, based on a target code amount and encoding status information; and a block size enlargement unit for enlarging a block size of the input video based on the block size enlargement parameter.

Abstract: A semiconductor device includes a drift layer 20 of a first conductivity type, a base layer 30 of a second conductivity type that is disposed on the drift layer 20 and is connected to a source electrode 90, and a column layer 50 of a second conductivity type that is connected to the source electrode 90 and penetrates the base layer 30 to extend into the drift layer 20.

Abstract: The system is provided with a controller that controls the acceleration and deceleration of the vehicle according to the operation quantity of an accelerator pedal, and a state detector that determines whether a wheel is in a slippery state. The controller sets a deceleration region corresponding to a relatively small amount of operation and an acceleration region corresponding to a relatively large operation quantity regarding the operation quantity, and controls such that, in at least partially, the deceleration of the vehicle is increased as the operation quantity decreases, while in at least a part of the acceleration region, the acceleration of the vehicle is increased as the operation quantity increases. When the state detector detects a slippery state, the controller decreases the maximum deceleration that can be produced in the deceleration region.

Abstract: A logic circuit emulator comprises multiple sub-systems, in which each sub-system outputs to another one of the sub-systems a permission notification to permit the another sub-system to proceed to next emulation clock cycle depending on whether or not the state of an own sub-circuit has advanced. In case a signal that is output from an own sub-circuit and that is to be sent to a sub-circuit of the other sub-system has changed, each sub-system outputs a transfer request to transfer the signal to the another sub-system before the next emulation clock cycle. In case a signal is not being sent from the own sub-circuit to the sub-circuit of the another sub-system, and a permission notification is received but no transfer request is being received from the other sub-system, a clock signal is output for the own sub-circuit to advance the own sub-circuit to the next emulation clock cycle.