Abstract: In the solid-state image sensor manufacturing method according to the present invention, metal silicide films comprising of at least one of cobalt silicide film, nickel silicide film, and titanium silicide film having similar specific resistances to metal films are selectively formed on the top faces (whole surfaces for example) of charge-transfer electrodes. The kind of manufacturing method realizes a solid-state image sensor which keeps the charge-transfer electrodes at low resistance, can operate at a high speed, and is highly sensitive even if the width of those electrodes is reduced.

Abstract: A digital amplifier including a clock generation unit configured to output a clock signal, a pulse width modulation unit configured to pulse width-modulate the clock signal based on an input signal, a driving unit configured to alternately drive at least two switching elements which convert the output of the pulse width modulation unit, an analysis unit configured to analyze characteristics of the input signal, and a control unit configured to control frequencies of the clock signal based on an output of the analysis unit.

Abstract: A main functional structure executes continuous predetermined operations to continuously generate events associated with the operations. A debug/trace circuit compares an event occurring at the main functional structure with detection condition indicating information of one entry in a control information list, and executes the operation designated by operation indicating information paired with the detection condition indicating information in accordance with the result of the comparison. The debug/trace circuit continuously performs this in accordance with the control information list to identify the event.

Abstract: Provided is a performance optimization system that can identify a case where the impact on performance is large even when the number of cache misses is small.

Abstract: A main functional structure executes continuous predetermined operations to continuously generate events associated with the operations. A debug/trace circuit compares an event occurring at the main functional structure with detection condition indicating information of one entry in a control information list, and executes the operation designated by operation indicating information paired with the detection condition indicating information in accordance with the result of the comparison. The debug/trace circuit continuously performs this in accordance with the control information list to identify the event.

Abstract: There is provided a trace/failure observation system which is capable of comprehensive collection of information that is needed for checking a desired operation in a system or the like where the amount of information to be observed is large, and which allows easy analysis of the desired operation. The system includes, in a system LSI to be subjected to trace/failure observation: an event detecting means for observing behavior of a portion to be observed; a first data reducing means for performing observation data reduction processing so that observation data from the event detecting means has an amount of information processable to a second data reducing means; and the second data reducing means for performing one or more steps of observation data reduction processing.

Abstract: A broadcast receiving apparatus includes a determination unit that determines whether an external apparatus is capable of transmitting broadcast program information about a plurality of channels via a communication unit. When the determination unit determines that the external apparatus is capable of transmitting the broadcast program information, an acquisition unit does not acquire the broadcast program information from the digital broadcast signal. The external apparatus is requested to transmit the broadcast program information. The broadcast program information is acquired from the external apparatus.

Abstract: A solid-state imaging element having high sensitivity and low smear in miniaturization is provided. The solid-state imaging element includes: a photoelectric conversion unit; a read-out unit; a charge transferring unit; a charge transfer electrode formed over the charge transferring unit; shielding film formed over the charge transfer electrode and has an opening part over the photoelectric conversion unit; and anti-reflection film formed (i) in the opening part, and (ii) over the charge transfer electrode. A first edge, of the to anti-reflection film formed in the opening part, stops protruding before reaching spacing found under the shielding film. A second edge, of the anti-reflection film formed over the charge transfer electrode, stops protruding before covering a side wall of the charge transfer electrode. The first edge faces the side wall of the charge transfer electrode, and the second edge protrudes in a read-out direction of the charge.

Abstract: A solid-state imaging device including: light-receiving units which are formed in rows and columns; a transfer channel formed in each column; first and second transfer electrodes that are formed in the same layer and deposited alternately above the transfer channel; insulating regions each formed above the transfer channel and between one of the first transfer electrodes and one of the second transfer electrodes which are adjacent to each other; an antireflection film formed above the light-receiving units, and formed on the insulating regions to cover the insulating regions; a first wire formed in each row in a layer upper than the antireflection film, and electrically connected to second transfer electrodes; and a light-shielding film which is formed in a layer upper than the first wire, covers the transfer channel, and has an opening above each of the light-receiving units.

Abstract: A solid state imaging device comprises: a photoelectric converting portion; a charge transferring portion including a charge transfer electrode for transferring an electric charge generated in the photoelectric converting portion; and a shielding film formed through an insulating film containing nitrogen on the charge transferring portion, wherein the insulating film containing the nitrogen includes: a first insulating film that covers at least a part of an upper surface of the charge transfer electrode; and a second insulating film formed to reach the upper surface of the charge transfer electrode from the photoelectric converting portion, and the first and second insulating films include a discontinuing portion.

Abstract: A solid-state image pickup element comprises: a semiconductor substrate; an imaging section comprising a photoelectric converting portion, formed on the semiconductor substrate; an intralayer lens formed in an upper layer of the imaging section; and a peripheral circuit section that processes an output of the imaging section, formed on the semiconductor substrate, wherein at least part of the intralayer lens is formed in a lower layer of a wiring portion in the peripheral circuit section.

Abstract: An information management method includes: receiving a request for certain operation of certain electronic information associated with operation right information that defines permitted operation for each user; determining as to whether or not at least one of (i) a history of previous operations, executed by the user, of the certain electronic information and (ii) a history of previous operations, executed by the user, of a location associated with the certain electronic information meets a predetermined condition, and if it is determined that the at least one of (i) the history of previous operations, executed by the user, of the certain electronic information and (ii) the history of previous operations, executed by the user, of the location associated with the certain electronic information meets the predetermined condition, starting to execute the certain operation.

Abstract: A semiconductor device comprises: a MOS transistor including: a semiconductor substrate; a source region, formed in the semiconductor substrate, that comprises an impurity of a first conductive type; a drain region, formed in the semiconductor substrate, that comprises an impurity of the first conductive type; and a gate electrode, formed through a gate insulating film on the semiconductor substrate, between the source region and the drain region; an impurity region of the first conductive type formed in the semiconductor substrate; an impurity region of a second conductive type to be opposite to the first conductive type formed in the semiconductor substrate; and a wiring provided to connect each of the impurity region of the first conductive type and the impurity region of the second conductive type to the gate electrode.

Abstract: Upon receiving debugging program activation instructions sent from a communication port (1), debugging program activation instruction distribution units (61 and 71) distribute the received debugging program activation instructions to execution units designated by these activation instructions. Debugging program activation units (62 and 72) are provided for each execution unit (A and B) and, based on the activation instructions distributed by the activation instruction distribution units (61 and 71), activate debugging programs (63 and 73) on the execution units designated by these activation instructions.

Abstract: An information processing apparatus includes a first setting section, and a second setting section. The first setting section sets, when a first user is in a first status which indicates the first user moves out from a first group, a first authority under which the first user is permitted to read out and prohibited to write into the first electronic information. The first setting section sets, when a second user is in a second status which indicates the second user moves into a second group, a second authority under which the second user is permitted to read out and prohibited to write into the second electronic information. The second setting section cancels, when the first user satisfies a first condition, the first authority. The second setting section changes, when the second user satisfies a second condition, the second authority into an authority based on the second group.

Abstract: An audio player apparatus includes a first speaker disposed to output a sound from a front face of a flat panel television apparatus to the outside, a second speaker disposed to output a sound from a backside of the flat panel television apparatus to the outside, a microphone disposed on the backside of the flat panel television apparatus to receive the sound output from the second speaker and to convert the received sound into an electric signal, an analysis unit configured to detect a reflected sound and reflection time of the sound output from the second speaker based on a second audio signal supplied to the second speaker and the electric signal output from the microphone, and a phase correction unit configured to correct a phase of at least one of a first audio signal supplied to the first speaker and the second audio signal based on the reflection time.

Abstract: A video audio system includes an audio processing apparatus capable of processing audio signals input from a plurality of input sources and a video processing apparatus capable of displaying a video image based on a video signal input from a selected input source. The video processing apparatus executes image processing based on the selected input source type notified by the audio processing apparatus, and transmits delay time information required for the image processing. The audio processing apparatus delays an audio signal based on the delay time information transmitted from the video processing apparatus.

Abstract: The information processing device which recovers a domain developing a fault caused by added application and device driver while maintaining security and reliability includes a plurality of processors, wherein the plurality of processors form a plurality of domains according to processing contents to be executed, and the processors in different domains communicate with each other through a communication unit, and which further includes a recovery unit for executing, for a domain developing a fault, failure recovery processing based on a failure recovery request notified by the domain and a recovery condition set in advance for each domain.

Abstract: The present invention provides a sound producing apparatus which suppresses an increase in electric power consumption and cost, and an increase in a number of wiring when a plurality of speaker apparatuses is configured. A speaker driving apparatus supplies electric power to a speaker apparatus, acquires information about an electroacoustic characteristic and maximum input electric power of each speaker apparatus from the speaker apparatus, and executes characteristic correction and output electric power restriction according to the information.

Abstract: A solid state imaging device comprises: a photoelectric converting portion; a charge transferring portion including a charge transfer electrode for transferring an electric charge generated in the photoelectric converting portion; and a shielding film formed through an insulating film containing nitrogen on the charge transferring portion, wherein the insulating film containing the nitrogen includes: a first insulating film that covers at least a part of an upper surface of the charge transfer electrode; and a second insulating film formed to reach the upper surface of the charge transfer electrode from the photoelectric converting portion, and the first and second insulating films include a discontinuing portion.