Abstract: A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a third semiconductor layer and a fourth semiconductor layer formed on the second semiconductor layer, a gate electrode formed on the third semiconductor layer, and a source electrode and a drain electrode contacting and formed on the fourth semiconductor layer, wherein the third semiconductor layer is formed of a semiconductor material for attaining p-type on an area just under the gate electrode, and a concentration of silicon in the fourth semiconductor layer is higher than that in the second semiconductor layer.

Abstract: A semiconductor apparatus includes: a substrate; a buffer layer formed on the substrate; a strained layer superlattice buffer layer formed on the buffer layer; an electron transit layer formed of a semiconductor material on the strained layer superlattice buffer layer; and an electron supply layer formed of a semiconductor material on the electron transit layer; the strained layer superlattice buffer layer being an alternate stack of first lattice layers including AlN and second lattice layers including GaN; the strained layer superlattice buffer layer being doped with one, or two or more impurities selected from Fe, Mg and C.

Abstract: A method of manufacturing a semiconductor crystal substrate, includes forming a nitride layer by supplying a gas including a nitrogen component to a substrate formed of a material including silicon and nitriding a surface of the substrate; and forming an AlN layer on the nitride layer by supplying the gas including the nitrogen component and a source gas including Al.

Abstract: A semiconductor apparatus includes a buffer layer formed on a substrate; an SLS (Strained Layer Supperlattice) buffer layer formed on the buffer layer; an electron transit layer formed on the SLS buffer layer and formed of a semiconductor material; and an electron supply layer formed on the electron transit layer and formed of a semiconductor material. Further, the buffer layer is formed of AlGaN and includes two or more layers with different Al composition ratios, the SLS buffer layer is formed by alternately laminating a first lattice layer including AlN and a second lattice layer including GaN, and the Al composition ratio in one of the layers of the buffer layer being in contact with the SLS buffer layer is greater than or equal to an Al effective composition ratio in the SLS buffer layer.

Abstract: A compound semiconductor multilayer structure is formed on a Si substrate. The compound semiconductor multilayer structure includes an electrode transit layer, an electrode donor layer formed above the electron transit layer, and a cap layer formed above the electron donor layer. The cap layer contains a first crystal polarized in the same direction as the electron transit layer and the electron donor layer and a second crystal polarized in the direction opposite to the polarization direction of the electron transit layer and the electron donor layer.

Abstract: A compound semiconductor device includes: a compound semiconductor multilayer structure including a first buffer layer composed of AlN; and a second buffer layer composed of AlGaN and formed above the first buffer layer, wherein the second buffer layer contains carbon, and wherein the concentration of carbon in the second buffer layer increases with increasing distance from a lower surface of the second buffer layer toward an upper surface of the second buffer layer.

Abstract: A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

Abstract: A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.

Abstract: A semiconductor device may include a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode in contact with the first semiconductor layer or the second semiconductor layer, an opening formed in the second semiconductor layer, an insulating film formed on an inner surface of the opening formed in the second semiconductor layer and above the second semiconductor layer, a gate electrode formed in the opening via the insulating film, and a protective film formed on the insulating film and including an amorphous film containing carbon as a major component.

Abstract: An embodiment of a method of manufacturing a compound semiconductor device includes: forming an initial layer over a substrate; forming a buffer layer over the initial layer; forming an electron transport layer and an electron supply layer over the buffer layer; and forming a gate electrode, a source electrode and a gate electrode over the electron supply layer. The forming an initial layer includes: forming a first compound semiconductor film with a flow rate ratio being a first value, the flow rate ratio being a ratio of a flow rate of a V-group element source gas to a flow rate of a III-group element source gas; and forming a second compound semiconductor film with the flow rate ratio being a second value different from the first value over the first compound semiconductor film. The method further includes forming an Fe-doped region between the buffer layer and the electron transport layer.

Abstract: A semiconductor device includes: a nucleation layer formed over a substrate; a buffer layer formed over the nucleation layer; a first nitride semiconductor layer formed over the buffer layer; and a second nitride semiconductor layer formed over the first nitride semiconductor layer, wherein the ratio of yellow luminescence emission to band edge emission in photoluminescence is 400% or less and the twist value in an X-ray rocking curve is 1,000 arcsec or less.

Abstract: A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.

Abstract: A compound semiconductor multilayer structure is formed on a Si substrate. The compound semiconductor multilayer structure includes an electrode transit layer, an electrode donor layer formed above the electron transit layer, and a cap layer formed above the electron donor layer. The cap layer contains a first crystal polarized in the same direction as the electron transit layer and the electron donor layer and a second crystal polarized in the direction opposite to the polarization direction of the electron transit layer and the electron donor layer.

Abstract: An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and an amorphous insulating film formed between the substrate and the compound semiconductor stacked structure.

Abstract: The etching processing method is characterized in that, when performing an etching processing on a resin member by using a desmear liquid containing an alkaline permanganate etching liquid, the etching processing is performed by dipping the resin member into the desmear liquid of which an etching rate for a resin forming the resin member is adjusted by using at least one of an accelerator for accelerating the etching rate of the desmear liquid and a suppressor for suppressing the etching rate.

Abstract: A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

Abstract: A cleaning apparatus for a semiconductor manufacturing apparatus includes: a oxide removal unit that removes an oxide over a surface of a deposit adhered to components of the semiconductor manufacturing apparatus, and a deposit removal unit that removes the deposit after the oxide over the surface is removed by the oxide removal unit.

Abstract: A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.

Abstract: A semiconductor device includes: a semiconductor layer formed over a substrate; an insulating film formed over the semiconductor layer; and an electrode formed over the insulating film, wherein the insulating film includes an amorphous film including carbon.

Abstract: On a surface of a compound semiconductor layer including inner wall surfaces of an electrode trench, an etching residue 12a and an altered substance 12b which are produced due to dry etching for forming the electrode trench are removed, and a compound semiconductor is terminated with fluorine. Gate metal is buried in the electrode trench via a gate insulating film, or the gate metal is directly buried in the electrode trench, whereby a gate electrode is formed.